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公开(公告)号：US10325799B2
公开(公告)日：2019-06-18
申请号：US14875392
申请日：2015-10-05
Applicant: Applied Materials, Inc.
Inventor： Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Ganesh Balasubramanian , Lipyeow Yap , Jianhua Zhou , Thomas Nowak
IPC: B05C13/00 , H01L21/68 , C23C16/458 , H01J37/32 , H01L21/687 , H01L21/324 , H01L21/67
Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.
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公开(公告)号：US20160181134A1
公开(公告)日：2016-06-23
申请号：US14839656
申请日：2015-08-28
Applicant: Applied Materials, Inc.
Inventor： Edward W. Budiarto , Majeed A. Foad , Ralf Hofmann , Thomas Nowak , Todd Egan , Mehdi Vaez-Iravani
IPC: H01L21/67 , H01L21/02 , H01L21/285 , H01L21/66 , H01L21/033
CPC classification number: H01L21/67253 , G03F1/22 , G03F1/24 , H01L21/02631 , H01L21/0332 , H01L21/0337 , H01L21/2855 , H01L22/12 , H01L22/26
Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.
Abstract translation: 一种监测和沉积控制系统及其操作方法，包括：沉积室，用于在基板上沉积材料层; 传感器阵列，用于监测材料层的沉积，用于在沉积期间材料层的层厚度的变化; 以及用于基于沉积期间的层厚度的变化来调整沉积参数的处理单元。
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3.发明授权公开(公告)号：US09206511B2
公开(公告)日：2015-12-08
申请号：US14087671
申请日：2013-11-22
Applicant: Applied Materials, Inc.
Inventor： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
CPC classification number: F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
Abstract translation: 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。
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公开(公告)号：US11613812B2
公开(公告)日：2023-03-28
申请号：US17011853
申请日：2020-09-03
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: C23C16/52 , G01B11/06 , H01L21/687 , H01L21/67 , C23C16/509 , G01N21/55 , G01N21/65 , H01L21/00 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US10793954B2
公开(公告)日：2020-10-06
申请号：US15976468
申请日：2018-05-10
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/687 , H01L21/67 , C23C16/509 , G01N21/55 , G01N21/65 , H01L21/00 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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Patent Agency Ranking
公开(公告)号：US10570517B2
公开(公告)日：2020-02-25
申请号：US15184675
申请日：2016-06-16
Applicant: Applied Materials, Inc.
Inventor： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
Abstract: Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.
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公开(公告)号：US10522375B2
公开(公告)日：2019-12-31
申请号：US15840215
申请日：2017-12-13
Applicant: Applied Materials, Inc.
Inventor： Edward W. Budiarto , Majeed A. Foad , Ralf Hofmann , Thomas Nowak , Todd Egan , Mehdi Vaez-Iravani
IPC: H01L21/00 , H01L21/67 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/66 , G03F1/22 , G03F1/24
Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.
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公开(公告)号：US10030306B2
公开(公告)日：2018-07-24
申请号：US14422148
申请日：2013-10-23
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/00 , H01L21/687 , H01L21/67 , C23C16/509 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , G01N21/55 , G01N21/65 , C23C16/455
Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US20180114711A1
公开(公告)日：2018-04-26
申请号：US15840215
申请日：2017-12-13
Applicant: Applied Materials, Inc.
Inventor： Edward W. Budiarto , Majeed A. Foad , Ralf Hofmann , Thomas Nowak , Todd Egan , Mehdi Vaez-lravani
IPC: H01L21/67 , H01L21/033 , H01L21/285 , H01L21/66 , G03F1/22 , H01L21/02 , G03F1/24
CPC classification number: H01L21/67253 , G03F1/22 , G03F1/24 , H01L21/02631 , H01L21/0332 , H01L21/0337 , H01L21/2855 , H01L22/12 , H01L22/26
Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.
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公开(公告)号：US09458537B2
公开(公告)日：2016-10-04
申请号：US14869371
申请日：2015-09-29
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/00 , H01L21/687 , H01L21/67 , C23C16/509 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , G01N21/55 , G01N21/65 , C23C16/455
CPC classification number: C23C16/52 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5096 , G01B11/0625 , G01B11/0683 , G01N21/55 , G01N21/658 , G01N2201/1222 , H01L21/00 , H01L21/67248 , H01L21/67253 , H01L21/687
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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