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公开(公告)号：US12098462B2
公开(公告)日：2024-09-24
申请号：US17309452
申请日：2019-11-27
申请人： AIXTRON SE
IPC分类号： C23C16/455 , B23K26/364 , B23K26/382 , B23K26/402 , B23K103/00
CPC分类号： C23C16/45508 , B23K26/364 , B23K26/389 , B23K26/402 , B23K2103/52 , B23K2103/54
摘要： A component made of a quartz blank is used as a component part of a CVD reactor. At least one cavity of the component is created by selective laser etching, wherein a fluid flows through the at least one cavity. When in use, the component is heated to temperatures in excess of 500° C., and comes into contact with hydrides of the main groups IV, V or VI and/or with organometallic compounds or halogenides of elements of the main groups II, III or V.
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公开(公告)号：US20230220553A1
公开(公告)日：2023-07-13
申请号：US18009675
申请日：2021-06-16
申请人： AIXTRON SE
发明人： Markus JAKOB , Andy EICHLER
IPC分类号： C23C16/52 , C23C14/12 , B01D1/00 , B01D1/14 , C23C14/24 , C23C14/54 , C23C16/448 , C23C16/455 , G01L9/00 , G05D11/13
CPC分类号： C23C16/52 , B01D1/14 , B01D1/0082 , C23C14/12 , C23C14/246 , C23C14/543 , C23C16/4483 , C23C16/45561 , G01L9/0005 , G05D11/139
摘要： In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.
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公开(公告)号：US20230002905A1
公开(公告)日：2023-01-05
申请号：US17773512
申请日：2020-10-30
申请人： AIXTRON SE
IPC分类号： C23C16/52 , C23C16/46 , C23C16/458 , C23C16/455 , C23C16/26
摘要： A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.
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公开(公告)号：US20220403519A1
公开(公告)日：2022-12-22
申请号：US17773523
申请日：2020-10-30
申请人： AIXTRON SE
IPC分类号： C23C16/455 , C23C16/46 , C23C16/30
摘要： A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.
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公开(公告)号：US20220259737A1
公开(公告)日：2022-08-18
申请号：US17626113
申请日：2020-07-10
申请人： AIXTRON SE
发明人： Oliver SCHÖN
IPC分类号： C23C16/455 , C30B25/14
摘要： A gas outlet surface of a gas inlet element for a CVD reactor or a gas outlet surface of a shielding plate for a gas inlet element has a multiplicity of gas outlet openings arranged around a center of the gas outlet surface. The central points of the gas outlet openings lie at the corner points of polygonal, identically formed cells, each having a geometrical central point. The position and the length of the edges of the cells are defined by intersecting reference lines, the reference lines being assigned to at least two families of lines, and the reference lines of a respective family extending linearly and parallel to one another over an entirety of the gas outlet surface. The center of the gas outlet surface is separated from one of the corner points by one-third±10 percent of the length of one of the edges.
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公开(公告)号：US11268934B2
公开(公告)日：2022-03-08
申请号：US16499211
申请日：2018-03-22
申请人： AIXTRON SE
IPC分类号： G01N29/036 , C23C14/12 , C23C14/54 , G01N29/02
摘要： A device for determining the partial pressure or the concentration of a steam in a volume, includes a sensor body that can be oscillated. The temperature of the sensor body can be controlled to a temperature below the condensation temperature of the steam, and the oscillation frequency of the sensor body is influenced by a mass accumulation of the condensed steam on a surface of the sensor body. Means are provided for generating a gas flow from the sensor surface in the direction of the volume through a steam transport channel that adjoins a window to the volume. In order to increase the maximum service life of the sensor body, the means for generating a gas flow has a slit nozzle designed as an annular channel.
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公开(公告)号：US20210189565A1
公开(公告)日：2021-06-24
申请号：US17051871
申请日：2019-04-30
申请人： AIXTRON SE
发明人： Alexandre JOUVRAY , Matthew Perry
IPC分类号： C23C16/46 , C23C16/52 , C23C16/26 , C23C16/455 , C23C16/54
摘要： In a device for depositing graphene, carbon nano-tubes or other, in particular carbon-contained coatings on a strip-shaped substrate, the substrate enters a reactor housing through an inlet opening and is transported in a transport direction through a process area that is tempered by a tempering device, before being exiting the reactor housing through an outlet opening. Heat-transport-inhibiting means are arranged between the process area and the inlet opening and/or the outlet opening by means of which a heat transport from the process area to the inlet opening or the outlet opening is reduced. Guide elements are also provided in order to guide the substrate into and out of regions directly adjacent to the inlet and outlet openings.
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公开(公告)号：US20210032771A1
公开(公告)日：2021-02-04
申请号：US16964152
申请日：2019-01-22
申请人： AIXTRON SE
IPC分类号： C30B25/12 , C23C16/458
摘要： A device is provided to fasten a susceptor of a CVD reactor to a drive shaft, by means of which the susceptor can be set into rotation. The device includes one or more of a base plate, a support plate, adjusting levers, and a flange element. The drive shaft carries the base plate, to which the support plate, which carries the susceptor, is fastened. The inclination of the support plate relative to the base plate can be adjusted by means of the adjusting levers. The support plate is connected to the flange element by means of a screw. A through opening aligned with the screw is closed with a plug.
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公开(公告)号：US20200149163A1
公开(公告)日：2020-05-14
申请号：US16495997
申请日：2018-03-06
申请人： AIXTRON SE
IPC分类号： C23C16/458 , C23C16/46
摘要： A susceptor for a CVD reactor includes a flat circular disc-shaped body with channels that are arranged on a broad side of the disc-shaped body within one or more circular surface sections extending on a plane in order to transfer heat to a substrate holder. The channels run about respective centers of the one or more circular surface sections in a spiral manner and are formed as depressions that are open towards the plane. An end of each of the channels has a channel opening, the channel openings being fluidically connected to a feed opening arranged at the end of a gas supply line. Additionally, the one or more surface sections are equipped with one or more influencing elements that influence the local heat transfer and are formed as open depressions on the plane or as insert pieces that plug into the depressions.
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公开(公告)号：US20200010951A1
公开(公告)日：2020-01-09
申请号：US16493738
申请日：2018-03-12
申请人： AIXTRON SE
发明人： Markus JAKOB , Wilhelmus JANSSEN , Steffen NEUMANN , Jaap OUDES
摘要： A device for depositing a layer, which has been structured by the application of a mask, on a substrate, includes an adjusting device for adjusting the position of a mask support with respect to a support frame. The device also includes a mask lifting device, by which the support frame, together with the mask support, the adjusting device and a mask assembly, can be vertically displaced from a mask changing position into a processing position. The device also includes a substrate holder lifting device, by which the substrate holder can be vertically displaced from a loading position into a processing position. Restraining means, which include a V-groove and a spherical surface, restrain the substrate holder in the processing position on the support frame. The spherical surface, formed by a ball element of the support frame, is supported on flanks of the V-groove that is formed by the substrate holder.
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