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公开(公告)号:US20180144932A1
公开(公告)日:2018-05-24
申请号:US15876829
申请日:2018-01-22
发明人: Ren-Hua GUO , Ju-Ru HSIEH , Jen-Hao YANG
IPC分类号: H01L21/02 , C23C16/509 , C23C16/455 , H01L29/66 , H01L21/8238 , C23C16/52 , C23C16/44 , C23C16/50 , C23C16/46 , C23C16/458
CPC分类号: H01L21/02271 , C23C16/4401 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/5096 , C23C16/52 , H01L21/02315 , H01L21/8238 , H01L21/823871 , H01L29/165 , H01L29/66477 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要: A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.
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2.
公开(公告)号:US20170110318A1
公开(公告)日:2017-04-20
申请号:US14918009
申请日:2015-10-20
发明人: Ren-Hua GUO , Ju-Ru HSIEH , Jen-Hao YANG
IPC分类号: H01L21/02 , C23C16/50 , C23C16/46 , C23C16/455 , C23C16/52 , H01L29/66 , C23C16/458
CPC分类号: H01L21/02271 , C23C16/4401 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/5096 , C23C16/52 , H01L21/02315 , H01L21/8238 , H01L21/823871 , H01L29/165 , H01L29/66477 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要: A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70° C. to about 100° C. to control a temperature of the precursor gases.
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