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    Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
    3.
    发明授权
    Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device 有权

    公开(公告)号：US10526699B2

    公开(公告)日：2020-01-07

    申请号：US16340007

    申请日：2018-07-20

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Kenji Kanbara ,  Takaya Miyase ,  Tsubasa Honke

    IPC分类号： C23C16/42 ,  C30B25/02 ,  H01L29/16 ,  H01L21/205 ,  C30B29/36 ,  H01L21/20 ,  H01L29/12 ,  H01L29/78

    摘要： A silicon carbide epitaxial film has a plurality of arc-shaped or annular basal plane dislocations and a plurality of threading dislocations. The plurality of threading dislocations have a first threading dislocation which is surrounded by the plurality of basal plane dislocations and a second threading dislocation which is not surrounded by the plurality of basal plane dislocations, when viewed from a direction perpendicular to a main surface. The plurality of basal plane dislocations and the first threading dislocation constitute an annular defect. An area density of the plurality of threading dislocations in the main surface is more than or equal to 50 cm−2. A value obtained by dividing an area density of the annular defect when viewed from the direction perpendicular to the main surface by the area density of the plurality of threading dislocations in the main surface is more than or equal to 0.00002 and less than or equal to 0.004.

    Silicon carbide epitaxial substrate and silicon carbide semiconductor device
    4.
    发明授权
    Silicon carbide epitaxial substrate and silicon carbide semiconductor device 有权

    公开(公告)号：US12125881B2

    公开(公告)日：2024-10-22

    申请号：US17274859

    申请日：2019-08-08

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsutomu Hori ,  Hiromu Shiomi ,  Takaya Miyase

    IPC分类号： H01L31/0312 ,  C30B25/20 ,  C30B29/36 ,  H01L29/16

    CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36

    摘要： A silicon carbide epitaxial layer includes a first silicon carbide layer, a second silicon carbide layer, a third silicon carbide layer, and a fourth silicon carbide layer. A nitrogen concentration of the second silicon carbide layer is increased from the first silicon carbide layer toward the third silicon carbide layer. A value obtained by dividing, by a thickness of the second silicon carbide layer, a value obtained by subtracting a nitrogen concentration of the first silicon carbide layer from a nitrogen concentration of the third silicon carbide layer is less than or equal to 6×1023 cm−4. Assuming that the nitrogen concentration of the third silicon carbide layer is N cm−3 and a thickness of the third silicon carbide layer is X μm, X and N satisfy a Formula 1.

    Silicon carbide epitaxial wafer
    6.
    发明授权
    Silicon carbide epitaxial wafer 有权

    公开(公告)号：US11459670B2

    公开(公告)日：2022-10-04

    申请号：US16638877

    申请日：2018-08-28

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsutomu Hori ,  Takaya Miyase ,  Tsubasa Honke ,  Hirofumi Yamamoto ,  Kyoko Okita

    IPC分类号： H01L29/16 ,  C30B29/36 ,  C30B25/20 ,  C30B29/68

    摘要： A silicon carbide epitaxial wafer includes a single crystal silicon carbide substrate of 4H polytype having a major surface thereof inclined at an angle θ to a {0001} plane toward a direction, and a silicon carbide epitaxial layer of a thickness t formed on the major surface, wherein a diameter of the single crystal silicon carbide substrate is greater than or equal to 150 mm, wherein the angle θ exceeds 0°, and is less than or equal to 6°, wherein one or more pairs of a screw dislocation pit and a diagonal line defect situated at a distance of t/tanθ from the pit are present in a surface of the silicon carbide epitaxial layer, and wherein a density of the pairs of a pit and a diagonal line defect is less than or equal to 2 pairs/cm2.