公开(公告)号：US10854737B2

公开(公告)日：2020-12-01

申请号：US15874081

申请日：2018-01-18

申请人： Applied Materials, Inc.

发明人： Soo Young Choi ,  Beom Soo Park ,  Yi Cui ,  Tae Kyung Won ,  Dong-Kil Yim

IPC分类号： H01L23/31 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

摘要： Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.

公开(公告)号：US10434629B2

公开(公告)日：2019-10-08

申请号：US14675379

申请日：2015-03-31

申请人： Applied Materials, Inc.

发明人： Dongsuh Lee ,  William N. Sterling ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： B24C1/06 ,  B24C1/00 ,  H01L21/687 ,  C23C16/458

摘要： The present disclosure generally relates to a substrate support for use in a substrate processing chamber. A roughened substrate support reduces arcing within the chamber and also contributes to uniform deposition on the substrate. A substrate support may have a substrate support body having a surface roughness of between about 707 micro-inches and about 834 micro-inches. The substrate support may have an anodized coating on the substrate support.

公开(公告)号：USD756502S1

公开(公告)日：2016-05-17

申请号：US29461403

申请日：2013-07-23

申请人： Applied Materials, Inc.

设计人： Dongsuh Lee ,  Beom Soo Park ,  Yi Cui ,  William N. Sterling

公开(公告)号：US20140030056A1

公开(公告)日：2014-01-30

申请号：US13948232

申请日：2013-07-23

申请人： Applied Materials, Inc.

发明人： Dongsuh Lee ,  Beom Soo Park ,  Yi Cui ,  William N. Sterling

IPC分类号： F01D9/02

CPC分类号： F01D9/02 ,  C23C16/24 ,  C23C16/45563 ,  C23C16/5096

摘要： The present invention provides methods and apparatus for a gas diffusion assembly in a deposition processing chamber. The invention includes a backing plate having an inlet for providing a process gas to a process chamber, a diffusion plate including a plurality of apertures for allowing the process gas to flow into the process chamber, a blocking plate disposed between the backing plate and the diffusion plate and including a plurality of apertures, and at least one gas flow guide disposed between the blocking plate and the backing plate and adapted to direct process gas flow laterally. Numerous additional features are disclosed.

摘要翻译： 本发明提供了一种用于沉积处理室中的气体扩散组件的方法和装置。 本发明包括具有用于向处理室提供工艺气体的入口的背板，包括用于使工艺气体流入处理室的多个孔的扩散板，设置在背板和扩散层之间的阻挡板 并且包括多个孔，以及至少一个气体流动引导件，其布置在阻挡板和背板之间并且适于引导横向流动气体流动。 公开了许多附加特征。

公开(公告)号：US10697063B2

公开(公告)日：2020-06-30

申请号：US14610489

申请日：2015-01-30

申请人： Applied Materials, Inc.

发明人： Lai Zhao ,  Gaku Furuta ,  Qunhua Wang ,  Robin L. Tiner ,  Beom Soo Park ,  Soo Young Choi ,  Sanjay D. Yadav

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

摘要： The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

公开(公告)号：US09677177B2

公开(公告)日：2017-06-13

申请号：US14505355

申请日：2014-10-02

申请人： Applied Materials, Inc.

发明人： Robin L. Tiner ,  Soo Young Choi ,  Beom Soo Park ,  Shinichi Kurita ,  Bora Oh ,  Gaku Furuta

IPC分类号： H05B3/68 ,  C23C16/458 ,  H01L21/67 ,  H05B3/22

CPC分类号： H05B3/22 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/50 ,  H01L21/67103 ,  H05B2203/003

摘要： The present invention generally relates to a substrate support for use in a processing chamber. The substrate support is divided into quadrants with each quadrant capable of heating independent of the other quadrants. The independent heating permits the substrate support to provide different heating to either different substrate simultaneously disposed on the substrate support or to different areas of a common substrate. Thus, the substrate heating may be tailored to ensure desired processing of the substrate or substrates occurs.

公开(公告)号：US09230796B2

公开(公告)日：2016-01-05

申请号：US14638877

申请日：2015-03-04

申请人： Applied Materials, Inc.

发明人： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

IPC分类号： H01L21/311 ,  H01L21/02 ,  C23C16/34 ,  C23C16/44

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/02299

摘要： Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

摘要翻译： 本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。 在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电 在处理室中设置的腔室部件的表面上的调味层。 腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。 在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

公开(公告)号：US10312058B2

公开(公告)日：2019-06-04

申请号：US15719465

申请日：2017-09-28

申请人： Applied Materials, Inc.

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

摘要： Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US10262837B2

公开(公告)日：2019-04-16

申请号：US14932618

申请日：2015-11-04

申请人： Applied Materials, Inc.

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

公开(公告)号：US08901015B2

公开(公告)日：2014-12-02

申请号：US13768921

申请日：2013-02-15

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen ,  Tae K. Won ,  Beom Soo Park ,  Young Jin Choi ,  Soo Young Choi

IPC分类号： H01L21/31 ,  C23C16/34 ,  H01L51/52 ,  C23C16/26

CPC分类号： H01L51/5256 ,  C23C16/26 ,  C23C16/345

摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.

摘要翻译： 描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。 在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分布板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对该处理室内的气体混合物进行激励; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。 在其他实施例中，有机介电层夹在无机封装层之间。