公开(公告)号：US10181581B2

公开(公告)日：2019-01-15

申请号：US15700681

申请日：2017-09-11

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen

IPC分类号： H01L21/00 ,  H01L51/52 ,  H01L51/56 ,  C23C16/40 ,  H01L51/00

摘要： Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer.

公开(公告)号：US09761836B2

公开(公告)日：2017-09-12

申请号：US15094582

申请日：2016-04-08

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen

IPC分类号： H01L51/52 ,  H01L51/56 ,  C23C16/40 ,  H01L51/00

CPC分类号： H01L51/5256 ,  C23C16/401 ,  H01L51/0034 ,  H01L51/0094 ,  H01L51/5253 ,  H01L51/56

摘要： Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer.

公开(公告)号：US09397318B2

公开(公告)日：2016-07-19

申请号：US13787550

申请日：2013-03-06

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen ,  Soo Young Choi

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L51/5253 ,  H01L51/56

摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The encapsulation methods may be performed as single or multiple chamber processes. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

摘要翻译： 提供了使用混合材料层封装置于衬底上的有机发光二极管（OLED）结构的方法和装置。 封装方法可以作为单室或多室工艺进行。 在沉积材料的混合层期间使用的处理参数允许控制沉积的混合层的特性。 混合层可以沉积成使得该层具有混合层的一些子层中的无机材料的特性和混合层的其它子层中的有机材料的特性。 混合材料的使用允许使用单个硬掩模的OLED封装用于完整的封装工艺，其具有低成本且在常规工艺中不存在对准问题。

公开(公告)号：US11742362B2

公开(公告)日：2023-08-29

申请号：US17487086

申请日：2021-09-28

申请人： Applied Materials, Inc.

发明人： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC分类号： H01L27/12 ,  H01L49/02 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

摘要： Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US10224507B2

公开(公告)日：2019-03-05

申请号：US15277353

申请日：2016-09-27

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen ,  Soo Young Choi

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/312 ,  H01L35/24 ,  H01L51/52 ,  H01L51/56

摘要： Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, an OLED device includes a first barrier layer disposed on a region of a substrate having an OLED structure disposed thereon, a fluorinated buffer layer including a polymer material containing fluorine disposed on the first barrier layer, an interface layer including the polymer material on the fluorinated buffer layer, and a second barrier layer disposed on the interface layer.

公开(公告)号：US09741966B2

公开(公告)日：2017-08-22

申请号：US15192383

申请日：2016-06-24

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen ,  Soo Young Choi

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L51/5253 ,  H01L51/56

摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The encapsulation methods may be performed as single or multiple chamber processes. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

公开(公告)号：US12080725B2

公开(公告)日：2024-09-03

申请号：US18221285

申请日：2023-07-12

申请人： Applied Materials, Inc.

发明人： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC分类号： H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L49/02

CPC分类号： H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

摘要： Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US20220363947A1

公开(公告)日：2022-11-17

申请号：US17741658

申请日：2022-05-11

申请人： Applied Materials, Inc.

发明人： Vibhas Singh ,  Wen-Hao Wu ,  Jrjyan Jerry Chen ,  Soo Young Choi

IPC分类号： C09D183/08 ,  B65D25/34 ,  C23C14/00 ,  C23C14/54

摘要： Packaging materials and methods of manufacture are disclosed. The packaging material comprises a substrate surface and film coating selected from the group consisting of an elastomer, a polymer, an inorganic material and combinations thereof. The film coating includes a first layer and a second layer, the first layer deposited on the second layer. The first layer has a formula of SiOxNyCz, where x is in a range from 1.9 to 2.15, y is in a range from 0.01 to 0.08, and z is in a range from 0.10 to 0.40.

公开(公告)号：US11038153B2

公开(公告)日：2021-06-15

申请号：US16248526

申请日：2019-01-15

申请人： Applied Materials, Inc.

发明人： Wen-Hao Wu ,  Jrjyan Jerry Chen

IPC分类号： H01L51/56 ,  H01L51/00 ,  H01L51/52

摘要： Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

公开(公告)号：US10087524B2

公开(公告)日：2018-10-02

申请号：US14275835

申请日：2014-05-12

申请人： Applied Materials, Inc.

发明人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

IPC分类号： B05B1/00 ,  C23C16/455 ,  H01J37/32

摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.