ACTIVE MATRIX SUBSTRATE
    2.
    发明公开

    公开(公告)号:US20240297181A1

    公开(公告)日:2024-09-05

    申请号:US18663479

    申请日:2024-05-14

    IPC分类号: H01L27/12 H01L29/786

    摘要: An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.

    Display device and array substrate

    公开(公告)号:US12015021B2

    公开(公告)日:2024-06-18

    申请号:US17212100

    申请日:2021-03-25

    IPC分类号: H01L25/16 H01L27/12

    摘要: A display device includes a substrate, a plurality of pixels provided to the substrate, a light emitting element and a plurality of transistors provided to each of the pixels, signal lines configured to supply a signal to the pixels, a first semiconductor layer and a second semiconductor layer provided in different layers in a direction perpendicular to the substrate and overlap at least partially in planar view, first gate electrodes each of which is provided in a region overlapping a part of the first semiconductor layer, a first insulating film provided between the first gate electrodes and the first semiconductor layer, and a second insulating film provided between the first semiconductor layer and the second semiconductor layer.

    Display device
    6.
    发明授权

    公开(公告)号:US12002819B2

    公开(公告)日:2024-06-04

    申请号:US17400530

    申请日:2021-08-12

    发明人: KuanFeng Lee

    IPC分类号: H01L27/12

    摘要: A display device is disclosed, which includes: a substrate; a first transistor disposed on the substrate; and a second transistor disposed on the substrate. The first transistor includes: a first active layer; a first electrode and a second electrode electrically connecting to the first active layer; and a conducting layer at least partially covering one of the first electrode and the second electrode. The second transistor includes a second active layer. Herein, one of the first active layer and the second active layer includes a polysilicon layer, and the other one of the first active layer and the second active layer includes a metal oxide layer.

    Semiconductor devices
    7.
    发明授权

    公开(公告)号:US11996414B2

    公开(公告)日:2024-05-28

    申请号:US17123782

    申请日:2020-12-16

    摘要: A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least: one or more semiconductor channels; a dielectric; a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric; a planarisation layer; a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer, and wherein the semiconductor channel regions are at least partly outside the through hole regions.

    Display device including an auxiliary layer

    公开(公告)号:US11967669B2

    公开(公告)日:2024-04-23

    申请号:US17843052

    申请日:2022-06-17

    摘要: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

    DISPLAY PANEL AND DISPLAY DEVICE
    9.
    发明公开

    公开(公告)号:US20240063228A1

    公开(公告)日:2024-02-22

    申请号:US18384584

    申请日:2023-10-27

    IPC分类号: H01L27/12 G09G3/3225

    摘要: A display panel includes a base substrate, a first transistor and a second transistor. The first transistor and the second transistor are formed on the base substrate. The first transistor includes a first active layer, a first gate electrode, a first source electrode, and a first drain electrode. The first active layer includes silicon. The second transistor includes a second active layer, a second gate electrode, a second source electrode, and a second drain electrode. The second active layer includes an oxide semiconductor. A length of a channel region of the first transistor is L1. Along a direction perpendicular to the base substrate, a distance between the first gate electrode and the first active layer is D1. The first transistor further includes a third gate electrode. Along the direction perpendicular to the base substrate, a distance between the third gate electrode and the first active layer is D3, and D1

    ARRAY SUBSTRATE AND DISPLAY PANEL
    10.
    发明公开

    公开(公告)号:US20240038769A1

    公开(公告)日:2024-02-01

    申请号:US17623594

    申请日:2021-12-22

    发明人: Guanbiao Li

    IPC分类号: H01L27/12

    CPC分类号: H01L27/1237

    摘要: The present application provides an array substrate and a display panel. The array substrate includes a substrate, a first gate electrode, a first insulating layer, a first electrode, a second gate electrode, a first conductive channel, and a second electrode. The present application reduces a leakage current of the array substrate by using an orthographic projection of the first gate electrode on the substrate to overlap an orthographic projection of the first conductive channel on the substrate.