The invention relates to methods for producing an indium-containing layer by metal-organic vapor phase deposition, wherein the indium-containing layer is generated on a substrate in a reaction chamber, wherein the indium is delivered to the process in the form of an indium-containing precursor compound with the formula InR3, wherein the radicals R, independently of one another, are selected from alkyl radicals with 1 to 6 C atoms, characterized in that the delivery of the indium-containing precursor compound takes place in a solution that contains a solvent and the indium-containing precursor compound dissolved therein, wherein the solvent has at least one hydrocarbon with 1 to 8 carbon atoms.The invention also relates to a solution consisting of a compound of formula InR3, wherein R are selected independently of one another from alkyl radicals with 1 to 6 C atoms, and at least one hydrocarbon having 1 to 8 carbon atoms, uses of the solution for producing an indium-containing layer by metal-organic vapor deposition, and devices for executing the method.