Invention Grant
- Patent Title: Tellurium compounds useful for deposition of tellurium containing materials
- Patent Title (中): 用于沉积含碲材料的碲化合物
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Application No.: US14332924Application Date: 2014-07-16
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Publication No.: US09537095B2Publication Date: 2017-01-03
- Inventor: Matthias Stender , Chongying Xu , Tianniu Chen , William Hunks , Philip S. H. Chen , Jeffrey F. Roeder , Thomas H. Baum
- Applicant: Entegris, Inc.
- Applicant Address: US MA Billerica
- Assignee: Entegris, Inc.
- Current Assignee: Entegris, Inc.
- Current Assignee Address: US MA Billerica
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L45/00 ; C07C333/16 ; C07C395/00 ; C07F7/10 ; C23C16/30
Abstract:
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Public/Granted literature
- US20140329357A1 TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS Public/Granted day:2014-11-06
Information query
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