公开(公告)号：US10186570B2

公开(公告)日：2019-01-22

申请号：US14765161

申请日：2014-02-05

Applicant: Entegris, Inc. ,  ATMI Korea Co., Ltd

Inventor： Bryan C. Hendrix ,  Philip S. H. Chen ,  Weimin Li ,  Woosung Jang ,  Dingkai Guo

IPC: H01L29/94 ,  H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  C01G23/00 ,  C01G25/00 ,  C01G35/00 ,  C23C16/18

Abstract: A high dielectric constant (k≥40), low leakage current (≤10−6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

公开(公告)号：US20150364537A1

公开(公告)日：2015-12-17

申请号：US14765161

申请日：2014-02-05

Applicant: ENTEGRIS, INC. ,  ATMI KOREA CO., LTD.

Inventor： Bryan C. Hendrix ,  Philip S.H. Chen ,  Weimin Li ,  Woosung Jang ,  Dingkai Guo

IPC: H01L49/02 ,  C01G23/00 ,  H01L21/02 ,  C23C16/18 ,  C23C16/455 ,  C01G35/00 ,  C01G25/00

CPC classification number: H01L28/55 ,  C01G23/003 ,  C01G25/006 ,  C01G35/00 ,  C01P2006/40 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02337 ,  H01L28/40

Abstract: A high dielectric constant (k≧40), low leakage current (≦10−6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

Abstract translation: 描述了非晶体金属氧化物的高介电常数（k≥40），低漏电流（＆nlE; 0.6nm或更低等效氧化物厚度下的10-6A / cm 2），包括两种或更多种相容金属的氧化物，其选自 由铋，钽，铌，钡，锶，钙，镁，钛，锆，铪，锡和镧系金属组成的组。 可以形成这种类型的金属氧化物，其中组成金属的相对比例沿着这种氧化物的厚度变化，以增强它们的稳定性。 金属氧化物可以通过公开的原子层沉积方法容易地制成，以提供可用于DRAM和其它微电子器件的金属氧化物介电材料。

公开(公告)号：US12018382B2

公开(公告)日：2024-06-25

申请号：US16123149

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C16/44 ,  B01D39/20 ,  B01D67/00 ,  C23C14/24 ,  C23C14/50 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C23C28/04

CPC classification number: C23C28/044 ,  B01D39/2027 ,  B01D67/00 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042 ,  B01D2239/0478 ,  B01D2239/1216

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US20200378011A1

公开(公告)日：2020-12-03

申请号：US16898149

申请日：2020-06-10

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  C23C14/24 ,  C23C14/50 ,  C23C16/40

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US10475575B2

公开(公告)日：2019-11-12

申请号：US14649334

申请日：2013-09-30

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Weimin Li ,  James Anthony O'Neill

IPC: H01G4/10 ,  H01G4/01 ,  C23C16/44 ,  C23C16/455 ,  H01L49/02

Abstract: A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1

公开(公告)号：US20190100842A1

公开(公告)日：2019-04-04

申请号：US16123149

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C14/50 ,  C23C16/40 ,  C23C16/44 ,  C23C14/24 ,  C23C16/455

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US20180130654A1

公开(公告)日：2018-05-10

申请号：US15862205

申请日：2018-01-04

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

公开(公告)号：US20170103888A1

公开(公告)日：2017-04-13

申请号：US15292760

申请日：2016-10-13

Applicant: Entegris, Inc.

Inventor： Dingkai Guo ,  Bryan C. Hendrix ,  Yuqi Li ,  Susan V. DiMeo ,  Weimin Li ,  William Hunks

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02211 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/45534 ,  H01L21/02164 ,  H01L21/0228

Abstract: A precursor composition is described, useful for low temperature (

公开(公告)号：US20160225615A1

公开(公告)日：2016-08-04

申请号：US15093865

申请日：2016-04-08

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Abstract translation: 描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

公开(公告)号：US20150251920A1

公开(公告)日：2015-09-10

申请号：US14431116

申请日：2013-09-26

Applicant: ENTEGRIS, INC.

Inventor： Weimin Li ,  David W. Peters ,  Scott L. Battle ,  William Hunks

IPC: C01G41/00 ,  C07F11/00 ,  H01B1/02 ,  C09D5/24 ,  C23C16/16 ,  C01C3/11

CPC classification number: C01G41/006 ,  C01C3/11 ,  C07F11/00 ,  C07F11/005 ,  C09D5/24 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4485 ,  H01B1/02

Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Abstract translation: 用于在衬底上形成含钨材料的钨前体，例如在微电子器件的制造中。 钨前体没有氟含量，并且可以用于固体递送过程或其它气相沉积技术，以形成诸如用于集成电路金属化的元素钨，或氮化钨膜或其它钨化合物膜的膜，其可用作 用于随后的元素钨金属化的基础层。