公开(公告)号：US20240043988A1

公开(公告)日：2024-02-08

申请号：US18216330

申请日：2023-06-29

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph R. Despres ,  Edward E. Jones ,  Joseph D. Sweeney

IPC: C23C14/48 ,  C23C14/00 ,  C23C14/34

CPC classification number: C23C14/48 ,  C23C14/0057 ,  C23C14/0063 ,  C23C14/3414

Abstract: The present disclosure relates to an ion implantation tool source and gas delivery system. The system can include a gas source comprising one or more gas supply vessels, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply vessels can supply a mixture of gases of hydrogen and fluoride. The hydrogen can be from 5% to 60% of the mixture of gases.

公开(公告)号：US11682540B2

公开(公告)日：2023-06-20

申请号：US17466362

申请日：2021-09-03

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US11139145B2

公开(公告)日：2021-10-05

申请号：US16904286

申请日：2020-06-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20170250084A1

公开(公告)日：2017-08-31

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01J37/244 ,  H01L31/18 ,  H01J37/317

CPC classification number: H01L21/2658 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/006 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US20160107136A1

公开(公告)日：2016-04-21

申请号：US14940278

申请日：2015-11-13

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

IPC: B01J8/02 ,  C01B35/06

CPC classification number: B01J8/0285 ,  B01J8/0465 ,  B01J2208/00017 ,  B01J2208/00389 ,  B01J2208/00433 ,  B01J2208/00539 ,  C01B35/061

Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

Abstract translation: 描述了一种装置，其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域，以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行，反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中，反应气体和中间产物的反应是可逆的，并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区，以抑制形成反应性固体的反应。

公开(公告)号：US20160013018A1

公开(公告)日：2016-01-14

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US20150380212A1

公开(公告)日：2015-12-31

申请号：US14768758

申请日：2014-03-03

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Joseph D. Sweeney ,  Ying Tang ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/22 ,  H01J37/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2225

Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.

Abstract translation: 描述了用于注入掺杂物种类的离子注入组合物，系统和方法。 描述了具体的硒掺杂剂源组合物，以及使用共流气体来实现植入系统特征如配方转变，束稳定性，源寿命，束均匀性，束电流和所有权成本的优点。

公开(公告)号：US09142387B2

公开(公告)日：2015-09-22

申请号：US14095575

申请日：2013-12-03

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: C23C16/00 ,  H01J37/317 ,  C01B35/00 ,  C01B35/06

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US11333302B2

公开(公告)日：2022-05-17

申请号：US16375000

申请日：2019-04-04

Applicant: ENTEGRIS, INC.

Inventor： Joseph Robert Despres ,  Joseph D. Sweeney ,  Edward A. Sturm

IPC: F17C11/00 ,  B01D53/04 ,  B01J20/22

Abstract: Described are storage and dispensing vessels and related systems and methods, for dispensing reagent gas from a vessel in which the reagent gas is held in sorptive relationship to a solid adsorbent medium, the reagent gas being contained at super-atmospheric pressure and the solid adsorbent medium comprising a metal-organic framework.

公开(公告)号：US10892137B2

公开(公告)日：2021-01-12

申请号：US16564965

申请日：2019-09-09

Applicant: ENTEGRIS, INC.

Inventor： Joseph D. Sweeney ,  Joseph R. Despres ,  Ying Tang ,  Sharad N. Yedave ,  Edward E. Jones ,  Oleg Byl

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.