公开(公告)号：US20230235449A1

公开(公告)日：2023-07-27

申请号：US18084705

申请日：2022-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： David M. Burtner ,  Neil J. Bassom

IPC: C23C14/48 ,  C23C14/06 ,  H01J37/317

CPC classification number: C23C14/48 ,  C23C14/0605 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.