公开(公告)号：US20150079705A1

公开(公告)日：2015-03-19

申请号：US14314642

申请日：2014-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooman Kim ,  Wonseok Yang

IPC: H01L21/66

CPC classification number: H01J37/3171 ,  H01J2237/31705 ,  H01L21/265 ,  H01L22/12 ,  H01L22/14

Abstract: A method of measuring a contamination level of an ion implanting apparatus is disclosed. The method may include the steps of providing a wafer, forming a first layer on the wafer, injecting impurities into the first layer, preparing an analysis sample by removing the first layer and concurrently collecting the impurities captured in the first layer from the wafer, and analyzing the analysis sample.

Abstract translation: 公开了一种测量离子注入装置的污染水平的方法。 该方法可以包括以下步骤：提供晶片，在晶片上形成第一层，将杂质注入到第一层中，通过去除第一层并同时从晶片中收集在第一层中捕获的杂质来制备分析样品;以及 分析样本。