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1.发明申请公开(公告)号：US20160133755A1
公开(公告)日：2016-05-12
申请号：US14435538
申请日：2014-08-07
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hui TIAN
IPC: H01L29/786 , H01L21/02 , H01L27/12 , H01L21/28 , H01L21/266 , H01L21/265 , H01L29/66 , H01L21/30
CPC classification number: H01L29/78675 , H01L21/02274 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L21/02675 , H01L21/26513 , H01L21/266 , H01L21/28158 , H01L21/3003 , H01L27/1222 , H01L27/1274 , H01L29/66757 , H01L29/786 , H01L29/78618
Abstract: A low temperature poly-silicon thin film transistor and its manufacturing method, an array substrate and a display device are provided. The method comprises: forming a poly-silicon film on a base substrate (1) and patterning the poly-silicon film to form an active layer (3); forming a gate insulation layer (4) on the active layer (3) and performing hydrogenation process to the gate insulation layer (4) and the active layer (3). By this method, the diffusion distance of hydrogen is largely shortened, the time for the hydrogenation process is reduced, and thus the process cost for the thin film transistor is largely lowered down.
Abstract translation: 提供了一种低温多晶硅薄膜晶体管及其制造方法，阵列基板和显示装置。 该方法包括：在基底基板（1）上形成多晶硅膜，并对多晶硅膜进行构图以形成有源层（3）; 在所述有源层（3）上形成栅极绝缘层（4）并对所述栅极绝缘层（4）和所述有源层（3）进行氢化处理。 通过该方法，氢的扩散距离大大缩短，氢化处理的时间缩短，薄膜晶体管的制造成本大幅降低。
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公开(公告)号：US20210199497A1
公开(公告)日：2021-07-01
申请号：US16066199
申请日：2017-12-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yongming SHI , Zhanjie MA , Hui TIAN , Chun WANG
Abstract: A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first photoelectric sensing element and a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element; the first photoelectric sensing element outputs a first sensed electrical signal, and the second photoelectric sensing element outputs a second sensed electrical signal; a polarity of the first sensed electrical signal is opposite to a polarity of the second sensed electrical signal, and an amplitude value of the first sensed electrical signal is substantially identical to an amplitude value of the second sensed electrical signal.
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公开(公告)号：US20170123320A1
公开(公告)日：2017-05-04
申请号：US14439976
申请日：2014-10-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hui TIAN
CPC classification number: G03F7/3092 , G03F7/42
Abstract: A method for removing photoresist comprising: depositing an oxide film on a base substrate on which photoresist has been formed; treating the oxide film by UV light; peeling off the oxide film; and removing the photoresist.
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公开(公告)号：US20160071691A1
公开(公告)日：2016-03-10
申请号：US14437046
申请日：2014-12-05
Applicant: BOE Technology Group Co., Ltd.
Inventor： Hui TIAN
IPC: H01J37/30 , H01J37/317
CPC classification number: H01J37/3005 , H01J37/3171 , H01J2237/2445 , H01J2237/31703 , H01J2237/31705 , H01J2237/31711
Abstract: A method for monitoring ion implantation, comprising: a), providing a control piece and forming a mask layer; b), performing ion implantation process to implant a predetermined dose of impurity ions into the control piece, an area on the control piece uncovered by the mask layer being an impurity implantation area and an area on the control piece covered by the mask layer being an impurity non-implantation area; c), peeling off the mask layer from the control piece; d), performing oxidation treatment on the control piece; and e), respectively measuring thicknesses of the oxide layers on the impurity implantation area and the impurity non-implantation area of the control piece, and monitoring the impurity dose of the ion implantation on the basis of a ratio of the thickness of the oxide layer in the impurity implantation area to the thickness of the oxide layer in the impurity non-implantation area. By this method, it is possible to accurately monitor whether or not the dose of the implanted ions meets the predetermined requirement, and it is possible to effectively avoid the defects of incorrect monitor result caused by the variation of the intrinsic resistance of the semiconductor, improve the accuracy of the monitoring, and thus improve the performance and yield rate of the device.
Abstract translation: 一种用于监测离子注入的方法，包括：a）提供控制件并形成掩模层; b），执行离子注入工艺以将预定剂量的杂质离子注入到控制件中，由掩模层未覆盖的作为杂质注入区域的控制片上的区域和由掩模层覆盖的控制片上的区域是 杂质非植入区; c）从掩模层剥离掩模层; d）对控制件执行氧化处理; 和e），分别测量所述杂质注入区域上的氧化物层的厚度和所述控制件的杂质非注入区域，并且基于所述氧化物层的厚度的比率来监测所述离子注入的杂质剂量 在杂质注入区域中的杂质非注入区域中的氧化物层的厚度。 通过该方法，可以准确地监视注入离子的剂量是否满足规定的要求，能够有效地避免半导体固有电阻的变化引起的监视结果不正确的缺陷，提高 监控的准确性，从而提高设备的性能和产出率。
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公开(公告)号：US20210207993A1
公开(公告)日：2021-07-08
申请号：US16072373
申请日：2017-12-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yongming SHI , Zhanjie MA , Hui TIAN , Chun WANG
Abstract: A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first sub-circuit and a second sub-circuit. The first sub-circuit includes a first photoelectric sensing element, and the second sub-circuit includes a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element, and the second photoelectric sensing element is shielded to prevent light from being incident on the second photoelectric sensing element.
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Patent Agency Ranking
公开(公告)号：US20190058001A1
公开(公告)日：2019-02-21
申请号：US15767584
申请日：2017-09-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hui TIAN
IPC: H01L27/146 , H01L31/0224 , H01L31/0216 , H01L31/0352 , H01L31/0296 , H01L31/18
Abstract: The present disclosure relates to an X ray flat panel detector and a fabrication method thereof. The X ray flat panel detector comprises: a substrate; a thin film transistor disposed on the substrate and configured to output a sensed signal; an insulating layer covering the thin film transistor; a photosensitive device disposed on the insulating layer to have a vertical shift with respect to the thin film transistor, and configured to absorb visible light through a quantum dot film and convert the visible light into a sensed signal; and a scintillating layer disposed on the photosensitive device and configured to convert X rays into the visible light.
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公开(公告)号：US20160027813A1
公开(公告)日：2016-01-28
申请号：US14422343
申请日：2014-06-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenqing XU , Hui TIAN , Xiaowei XU
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1255 , H01L27/1222 , H01L27/1274 , H01L27/3265 , H01L29/78675
Abstract: An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved.
Abstract translation: 提供阵列基板及其制造方法以及包括阵列基板的显示装置。 阵列基板包括基底基板和设置在基底基板上的薄膜晶体管和存储电容器，薄膜晶体管包括设置在源极和漏极与栅极之间的栅极，源极，漏极和栅极绝缘层 存储电容器包括设置在第一板和第二板之间的第一板，第二板和介电层，其中，第一板和第二板都由金属材料形成，并且介电层由 与栅极绝缘层相同的材料。 在本发明的阵列基板中，可以提高存储电容器的充电速度，并且进一步提高包括阵列基板的显示装置的显示质量。
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公开(公告)号：US20180081188A1
公开(公告)日：2018-03-22
申请号：US15529528
申请日：2016-06-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao LI , Hu MENG , Hui TIAN , Long WANG , Chiachiang LIN , Chiehhsing CHUNG
IPC: G02B27/22
CPC classification number: G02B27/2242 , G02B27/22
Abstract: A three-dimensional display device having an imaging space, wherein an up-conversion material is disposed inside the imaging space, a first light source that emits light toward the imaging space in a first direction, and a second light source that emits light toward the imaging space in a second direction. When the three-dimensional display device is operating, the light from the first light source and the light from the second light source intersect in the imaging space to form a convergence line or light convergence plane, such that the up-conversion material on the convergence line or in the convergence plane is excited to emit light.
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公开(公告)号：US20190049597A1
公开(公告)日：2019-02-14
申请号：US15763551
申请日：2017-08-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hui TIAN
IPC: G01T1/20 , G01T1/208 , H01L27/146 , H01L31/0224 , H01L31/0376 , H01L31/0288 , H01L31/0216 , H01L31/20
CPC classification number: G01T1/2006 , G01T1/208 , H01L27/14612 , H01L27/14636 , H01L27/14658 , H01L27/14663 , H01L27/14689 , H01L27/14692 , H01L31/02161 , H01L31/022408 , H01L31/0288 , H01L31/03762 , H01L31/202
Abstract: A X-ray detector includes: a base substrate; a plurality of detection modules disposed on the base substrate, wherein the detection module includes a thin film transistor disposed on the base substrate, an insulating layer with a via hole disposed on the thin film transistor and a photosensitive structure disposed on the insulating layer, a first electrode of the thin film transistor is electrically connected to the photosensitive structure through the via hole on the insulating layer, and the first electrode is a source or a drain electrode of the thin film transistor; and a scintillation layer disposed on the detection module. In the present disclosure, by disposing the photosensitive structure and the TFT in different layers, the photosensitive area of the photosensitive structure is enlarged, and it will not be affected by the TFT.
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10.发明申请公开(公告)号：US20180061856A1
公开(公告)日：2018-03-01
申请号：US15538016
申请日：2016-05-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD. , KA IMAGING INC.
Inventor： Feng JIANG , Hui TIAN , Xiaolong ZHANG , Chia Chiang LIN
IPC: H01L27/12 , H01L21/027 , H01L21/311 , H01L27/144 , G02F1/1362 , H01L21/768 , H01L31/02 , G02F1/1368
CPC classification number: H01L27/124 , G02F1/136227 , G02F1/1368 , G02F2201/121 , G02F2201/123 , H01L21/0274 , H01L21/3105 , H01L21/31133 , H01L21/31144 , H01L21/768 , H01L21/76816 , H01L27/1248 , H01L27/1288 , H01L27/1443 , H01L31/02005 , H01L31/02019
Abstract: A hole structure and a fabrication method thereof, an array substrate and a fabrication method thereof, a detection device and a display device are provided. The fabrication method of the hole structure includes: performing a first photolithography process on a first initial thin film with a pattern region of a mask to form a first thin film and a first hole located therein, and performing a second photolithography process on a second initial thin film covering the first thin film with the pattern region of the mask to form a second thin film and a second hole running through the second thin film and communicating with the first hole; a dimension of a second opening of the second hole away from a base substrate is larger than a dimension of a first opening of the second hole close to the base substrate.
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