公开(公告)号：US20230187207A1

公开(公告)日：2023-06-15

申请号：US17814241

申请日：2022-07-22

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： Kanyu CAO

IPC分类号： H01L21/027 ,  H01L21/02 ,  G03F7/20 ,  G03F7/42 ,  G03F7/00

CPC分类号： H01L21/0274 ,  H01L21/02112 ,  G03F7/70 ,  G03F7/42 ,  G03F7/0002

摘要： The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part close to the target layer and a second part away from the target layer; performing first exposure processing on the photoresist layer, and forming an exposure image in the first part of the photoresist layer; processing the second part of the photoresist layer by using a first process, such that the second part forms a third part, where a photosensitivity of the third part is higher than that of the first part; and stripping the third part.

公开(公告)号：US10078266B2

公开(公告)日：2018-09-18

申请号：US15441332

申请日：2017-02-24

申请人： Mattson Technology, Inc.

发明人： Wei-Hua Liou ,  Chun-Yen Kang ,  Vijay M. Vaniapura ,  Hai-Au M. Phan-Vu ,  Shawming Ma

IPC分类号： G03F7/42 ,  H01L21/66 ,  H01L21/311

CPC分类号： G03F7/42 ,  G03F7/423 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31133 ,  H01L21/31138 ,  H01L22/24

摘要： Processes for removing a photoresist from a substrate after, for instance, ion implantation are provided. In one example implementation, a process can include placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber. The process can include initiating a first strip process in the processing chamber. The process can include accessing an optical emission signal associated with a plasma during the first strip process. The process can include identifying an endpoint for the first strip process based at least in part on the optical emission signal. The process can include terminating the first strip process based at least in part on the endpoint. The process can include initiating a second strip process to remove the photoresist from the substrate.

公开(公告)号：US20180197891A1

公开(公告)日：2018-07-12

申请号：US15107808

申请日：2015-10-19

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Lijuan YANG

IPC分类号： H01L27/12 ,  G03F7/00 ,  G03F7/42 ,  H01L21/027

CPC分类号： H01L27/1244 ,  G02F1/1345 ,  G02F1/136286 ,  G02F2001/136295 ,  G03F7/00 ,  G03F7/0005 ,  G03F7/0035 ,  G03F7/42 ,  H01L21/0274 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1262 ,  H01L27/1288 ,  H01L27/3276

摘要： An array substrate and a manufacturing method thereof are provided. The array substrate includes a display area (02) and a fan-out area (01) disposed at the periphery of the display area (02), the manufacturing method comprising forming a line pattern (212) disposed in at least one of the display area (02) and the fan-out area (01), wherein forming a line pattern disposed in at least one of the display area and the fan-out area includes the following steps: forming a metal layer (210); forming an intermediate pattern (211) by performing a first patterning process on the metal layer; and forming the line pattern disposed in at least one of the display area (02) and the fan-out area (01) by performing a second patterning process on the intermediate pattern. The manufacturing methods provided by the respective embodiment of the present disclosure are capable of narrowing of the lines in the fan-out area, and compared with the existing one exposure method, can effectively reduce the risk of open-circuit and short-circuit.

公开(公告)号：US09899230B2

公开(公告)日：2018-02-20

申请号：US15231623

申请日：2016-08-08

申请人： Novellus Systems, Inc.

发明人： Bryan L. Buckalew ,  Steven T. Mayer ,  David Porter ,  Thomas A. Ponnuswamy

IPC分类号： B44C1/22 ,  H01L21/311 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  G03F7/42 ,  C25D5/02 ,  C25D7/12 ,  H01L21/683

CPC分类号： H01L21/31133 ,  C25D5/022 ,  C25D7/12 ,  G03F7/42 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/6838

摘要： The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.

公开(公告)号：US09875916B2

公开(公告)日：2018-01-23

申请号：US13670381

申请日：2012-11-06

申请人： TOKYO ELECTRON LIMITED

发明人： Ian J Brown

IPC分类号： H01L21/67 ,  H01L21/02 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01L21/67057 ,  G03F7/42 ,  H01L21/02076 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67086 ,  H01L21/67115 ,  H01L21/6715

摘要： Provided is a method and system for stripping an ion implanted resist or performing a post-ash clean using a single substrate tool. Cleaning objectives and cleaning operating variables are selected for optimization. The first step immerses the substrate in a first treatment chemical, while concurrently irradiating the substrate with UV light, the process completed in a first process time, a first flow rate, and a first rotation speed of the substrate. The second step dispenses onto the substrate a second treatment chemical at a second temperature and a second composition, the second treatment chemical dispensed at a dispense temperature, and completed in a second process time and a second rotation speed. The two or more selected cleaning operating variables comprise UV wavelength, UV power, first concentration, first rotation speed, first flow rate, second process time, second rotation speed, percentage of residue removal, and dispense temperature.

公开(公告)号：US09805946B2

公开(公告)日：2017-10-31

申请号：US14014455

申请日：2013-08-30

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Shang-Yuan Yu ,  Shao-Yen Ku ,  Hsiao Chien-Wen ,  Shao-Fu Hsu ,  Yuan-Chih Chiang ,  Wen-Chang Tsai ,  Jui-Chuan Chang

IPC分类号： H01L21/311 ,  H01L21/67 ,  G03F7/42

CPC分类号： H01L21/31133 ,  G03F7/42 ,  G03F7/423 ,  H01L21/6708

摘要： Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

公开(公告)号：US09753371B2

公开(公告)日：2017-09-05

申请号：US15369075

申请日：2016-12-05

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Yang Liu ,  Qiang Wu

IPC分类号： B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  G03F7/42 ,  H01L21/02 ,  H01L21/67 ,  B08B3/04 ,  F26B21/00

CPC分类号： G03F7/42 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B5/02 ,  F26B21/004 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/02087 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708

摘要： An edge bead removal apparatus is provided. The edge bead removal apparatus includes a clamping unit configured to clamp a cylindrical reticle and cause the cylindrical reticle to incline with a pre-determined angle and to rotate around a central axis. The edge bead removal apparatus also includes an edge bead removal solvent nozzle configured to spray an edge bead removal solvent to remove edge beads on both edges of the cylindrical reticle.

公开(公告)号：US20170222148A1

公开(公告)日：2017-08-03

申请号：US15501116

申请日：2015-07-31

申请人： ORTHOGONAL, INC.

发明人： John Andrew DEFRANCO ,  Charles Warren WRIGHT ,  Douglas Robert ROBELLO ,  Frank Xavier BYRNE ,  Diane Carol FREEMAN ,  Terrence Robert O'TOOLE

IPC分类号： H01L51/00 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/42 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0272 ,  H01L21/0274 ,  H01L51/0016 ,  H01L51/0018 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of making a device includes providing a fluorinated material layer over the device substrate having one or more target areas for patterning. One or more lift-off structures are formed at least in part by developing a first pattern of one or more open areas in the fluorinated material layer in alignment with the one or more target areas by contact with a developing agent including a fluorinated solvent which dissolves the fluorinated material at a first rate. After patterning, the lift-off structures are removed by contact with a lift-off agent including a fluorinated solvent wherein the lift-off agent dissolves the fluorinated material at a second rate that is at least 150 nm/sec and higher than the first rate.

公开(公告)号：US09616469B2

公开(公告)日：2017-04-11

申请号：US15021045

申请日：2014-09-09

申请人： USHIO DENKI KABUSHIKI KAISHA

发明人： Tomoyuki Habu

IPC分类号： B08B7/00 ,  H01L21/67 ,  G03F7/42

CPC分类号： B08B7/0057 ,  G03F7/42 ,  H01L21/67115 ,  H01L21/6719

摘要： A light irradiation device includes a workpiece support onto which a workpiece (object to be processed) is placed, an ultraviolet lamp for emitting a vacuum ultraviolet beam to a target surface (surface to be processed) of the workpiece, and a light transmitting window member disposed between the workpiece and the ultraviolet lamp and configured to pass the vacuum ultraviolet beam from the ultraviolet lamp therethrough. A gap defined between the target surface of the workpiece and the light transmitting window member is no greater than 1 mm. A gas supply unit is provided for supplying a processing gas into the gap such that the gas travels along the target surface in one direction. A gas blocking member is provided on the workpiece support in a region where the workpiece is not present. The region extends along a supply direction of the processing gas.

公开(公告)号：US09449808B2

公开(公告)日：2016-09-20

申请号：US13904283

申请日：2013-05-29

申请人： Novellus Systems, Inc.

发明人： Bryan L. Buckalew ,  Steven T. Mayer ,  David Porter ,  Thomas A. Ponnuswamy

IPC分类号： C23F1/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01L21/31133 ,  C25D5/022 ,  C25D7/12 ,  G03F7/42 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/6838

摘要： The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.

摘要翻译： 本文公开的实施例涉及用于从衬底去除材料的新颖方法和设备。 在某些实施例中，尽管公开的技术可以被实现以去除各种材料，但是使用该方法和装置来去除负光致抗蚀剂。 在实践所公开的实施例中，剥离溶液可以从入口引入内部歧管，有时称为横流歧管。 溶液横向流过衬底和基板之间的较窄的空腔。 流体在出口处离开狭窄的空腔，出口位于基板的另一侧，与入口和内部歧管相对。 衬底在与剥离溶液接触的同时旋转，以在衬底的表面上实现更均匀的流动。 在一些实施例中，基板包括用于增加靠近基板的表面的流速（从而增加局部Re）的突起。