公开(公告)号：US20180201884A1

公开(公告)日：2018-07-19

申请号：US15743529

申请日：2016-07-14

申请人： FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

发明人： Yasuo Sugishima ,  Keeyoung Park ,  Thomas Dory

IPC分类号： C11D11/00 ,  C11D7/08 ,  C11D7/50 ,  C11D7/32 ,  C11D7/26 ,  C23G5/032 ,  H01L21/02 ,  G03F7/42

CPC分类号： C11D11/0047 ,  C11D7/08 ,  C11D7/247 ,  C11D7/26 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5004 ,  C11D7/5022 ,  C23G5/032 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057

摘要： The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

公开(公告)号：US20180090306A1

公开(公告)日：2018-03-29

申请号：US15715227

申请日：2017-09-26

申请人： Tokyo Electron Limited

发明人： Jiro Higashijima ,  Nobuhiro Ogata ,  Yusuke Hashimoto

IPC分类号： H01L21/02 ,  B05B15/12 ,  B05B12/10 ,  H01L21/67 ,  G03F7/42

CPC分类号： H01L21/0206 ,  B05B12/10 ,  B05B14/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67248

摘要： A substrate processing apparatus includes a processing liquid supply mechanism 70 configured to supply a SPM liquid to a substrate; a temperature adjusting unit (heater) 303 configured to adjust a temperature of the SPM liquid at a time when the SPM liquid is supplied to the substrate from the processing liquid supply mechanism 70; an acquisition unit (temperature sensor) 80 configured to acquire temperature information of the SPM liquid on a surface of the substrate; and a control unit 18 configured to set an adjustment amount of the temperature adjusting unit (heater) 303 based on the temperature information of the SPM liquid acquired by the acquisition unit (temperature sensor) 80. The temperature adjusting unit (heater) 303 adjusts, based on the adjustment amount set by the control unit 18, the temperature of the SPM liquid at the time when the SPM liquid is supplied to the substrate.

公开(公告)号：US20180059547A1

公开(公告)日：2018-03-01

申请号：US15254935

申请日：2016-09-01

申请人： Rohm and Haas Electronic Materials LLC

发明人： Charlotte A. Cutler ,  Suzanne M. Coley ,  Owendi Ongayi ,  Christopher P. Sullivan ,  Paul J. LaBeaume ,  Li Cui ,  Shintaro Yamada ,  Mingqi Li ,  James F. Cameron

IPC分类号： G03F7/11 ,  G03F7/16 ,  G03F7/42 ,  G03F7/20 ,  G03F7/30 ,  C08G77/04 ,  C09D5/20 ,  C09D183/04 ,  C08F20/14 ,  C08F24/00 ,  C08G73/12 ,  C08F20/32 ,  C08G67/00 ,  C08F20/28

CPC分类号： G03F7/11 ,  C08F20/10 ,  C08F20/14 ,  C08F20/28 ,  C08F20/32 ,  C08F24/00 ,  C08F220/14 ,  C08F220/20 ,  C08F220/24 ,  C08F222/06 ,  C08F222/40 ,  C08F230/08 ,  C08F2220/1825 ,  C08F2220/1858 ,  C08F2220/1891 ,  C08F2220/282 ,  C08F2220/283 ,  C08F2220/325 ,  C08F2800/10 ,  C08G67/00 ,  C08G73/128 ,  C08G77/04 ,  C09D5/20 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/161 ,  G03F7/20 ,  G03F7/30 ,  G03F7/422 ,  G03F7/423

摘要： Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.

公开(公告)号：US20170322495A1

公开(公告)日：2017-11-09

申请号：US15393586

申请日：2016-12-29

申请人： UNIVERSITY-INDUSTRY FOUNDATION, YONSEI UNIVERSITY

发明人： Sang Woo LIM ,  Eun Seok OH

IPC分类号： G03F7/42 ,  H01L21/027 ,  B08B3/08

CPC分类号： G03F7/426 ,  C11D7/5009 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31133

摘要： Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.

公开(公告)号：US09726978B2

公开(公告)日：2017-08-08

申请号：US14717437

申请日：2015-05-20

申请人： FUJIFILM Corporation

发明人： Tomonori Takahashi ,  Kazutaka Takahashi ,  Atsushi Mizutani ,  Hiroyuki Seki ,  Hideo Fushimi ,  Tomoo Kato

IPC分类号： G03F7/42 ,  C11D7/08 ,  C11D7/50 ,  C11D11/00 ,  C09K13/00 ,  C09K13/06 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC分类号： G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

公开(公告)号：US20170087585A1

公开(公告)日：2017-03-30

申请号：US14863523

申请日：2015-09-24

申请人： SUSS MICROTEC PHOTOMASK EQUIPMENT GMBH & CO. KG

发明人： Davide Dattilo ,  Uwe Dietze ,  SherJang Singh

IPC分类号： B05D3/00

CPC分类号： B05D3/002 ,  B05B1/00 ,  B05D2203/30 ,  B08B3/10 ,  B08B7/0057 ,  C11D3/30 ,  C11D11/0047 ,  C11D11/007 ,  G03F1/82 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  G03F7/70925 ,  H01L21/31138 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67115

摘要： Methods for treating substrates are described. The methods comprise the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated and exposing the aqueous liquid medium to UV-radiation of a specific wavelength at least in a portion of the flow channel immediately adjacent the at least one outlet slit and after the aqueous liquid medium has flown through the outlet opening towards the substrate and thus prior to and while applying the aqueous liquid medium to the surface of the substrate to be treated. In one method, the electrical conductance of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 μS, by the addition of an additive to the aqueous liquid medium, the aqueous liquid medium prior to the addition of the additive having an electrical conductivity below 20 μS, prior to or while exposing the same to the UV-radiation. Additionally, the pH of the aqueous liquid medium may be adjusted to a range of 8 to 11 or 3 to 6 prior to or while exposing the same to the UV-radiation. The adjustments may lead to a shift in an equilibrium of reactive species generated in the aqueous liquid medium by the UV-radiation towards preferred species.

公开(公告)号：US20160312162A1

公开(公告)日：2016-10-27

申请号：US15028501

申请日：2014-10-09

申请人： E. I. DU PONT DE NEMOURS AND COMPANY ,  EKC TECHNOLOGY INC

发明人： Hua Cui

IPC分类号： C11D11/00 ,  H01L21/311 ,  H01L21/3213 ,  C11D7/04 ,  C23F1/38 ,  C11D7/32 ,  C23F1/18 ,  C23F1/26 ,  C23F1/34 ,  H01L21/02 ,  C11D7/26

CPC分类号： C11D11/0047 ,  B08B3/08 ,  B08B3/10 ,  C11D3/2082 ,  C11D3/3942 ,  C11D3/3947 ,  C11D7/04 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C23F1/18 ,  C23F1/26 ,  C23F1/28 ,  C23F1/34 ,  C23F1/38 ,  C23F1/40 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76807 ,  H01L21/76814

摘要： The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

摘要翻译： 本发明涉及一种去除组合物，用于从半导体衬底相对于低k电介质材料选择性地去除基本上由TiN，TaN，TiN x O y，TiW，W，Ti以及Ti和W的合金组成的硬掩模。 半导体衬底包括具有TiN，TaN，TiN x O y，TiW，W，Ti或其上的Ti或W硬掩模的合金的低k电介质材料。 去除组合物包含0.1重量％至90重量％的氧化剂; 0.0001重量％至50重量％的羧酸酯; 并且其余至多100重量％的去除组合物包含去离子水。

公开(公告)号：US20160254182A1

公开(公告)日：2016-09-01

申请号：US15028573

申请日：2014-10-09

申请人： E. I. DU PONT DE NEMOURS AND COMPANY ,  EKC TECHNOLOGY INC

发明人： Hua Cui

IPC分类号： H01L21/768 ,  B08B3/08 ,  B08B3/10 ,  C23F1/40 ,  C11D3/39 ,  C11D11/00 ,  C23F1/26 ,  H01L21/02 ,  C11D3/20

CPC分类号： C11D11/0047 ,  B08B3/08 ,  B08B3/10 ,  C11D3/2082 ,  C11D3/3942 ,  C11D3/3947 ,  C11D7/04 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C23F1/18 ,  C23F1/26 ,  C23F1/28 ,  C23F1/34 ,  C23F1/38 ,  C23F1/40 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76807 ,  H01L21/76814

摘要： The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

摘要翻译： 本公开涉及一种从半导体衬底去除基本上由TiN，TaN，TiN x O y，TiW，W，Ti以及Ti和W的合金组成的硬掩模的方法。 该方法包括使半导体衬底与去除组合物接触。 去除组合物包含0.1重量％至90重量％的氧化剂; 0.0001重量％至50重量％的羧酸酯; 并且其余至多100重量％的去除组合物包含去离子水。

公开(公告)号：US20160186105A1

公开(公告)日：2016-06-30

申请号：US14976737

申请日：2015-12-21

申请人： Air Products and Chemicals, Inc.

发明人： Wen Dar Liu ,  Yi-Chia Lee ,  Tianniu Chen ,  William Jack Casteel, JR. ,  Seiji Inaoka ,  Gene Everad Parris

IPC分类号： C11D11/00 ,  C11D7/10 ,  C11D7/26 ,  C11D7/08 ,  C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D3/3947 ,  C11D3/3956 ,  C11D7/10 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

摘要： A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R′NH2, wherein R′ is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer speicies; optionally, a fluoride ion source; and optionally, a metal chelating agent.

摘要翻译： 一种用于清洁集成电路基板的组合物，所述组合物包括：水; 包含氧化物质的铵盐的氧化剂; 包含具有以下通式的伯烷基胺的腐蚀抑制剂：R'NH 2，其中R'是含有至多约150个碳原子的烷基，更经常是含有约4至约30个碳原子的脂族烷基; 任选地，与水混溶的有机溶剂; 任选的有机酸; 可选地，缓冲区; 任选地，氟离子源; 和任选的金属螯合剂。

公开(公告)号：US20150210966A1

公开(公告)日：2015-07-30

申请号：US14432040

申请日：2013-11-29

申请人： MITSUBISHI GAS CHEMICAL COMPANY, INC.

发明人： Kenji Shimada ,  Toshiyuki Oie ,  Ryota Nakayama ,  Masaru Ohto

IPC分类号： C11D11/00 ,  C11D7/04 ,  H01L21/768 ,  C11D7/06 ,  C11D7/36 ,  H01L21/033 ,  H01L21/02 ,  C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/3947 ,  C11D7/04 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/36 ,  C23G1/20 ,  C23G1/205 ,  G03F7/0752 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139 ,  H01L21/76814 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： By cleaning with use of a cleaning liquid that contains 10-30% by mass of hydrogen peroxide, 0.005-10% by mass of a quaternary ammonium hydroxide, 0.005-5% by mass of potassium hydroxide, 0.000005-0.005% by mass of an amino polymethylene phosphonic acid and water, a hard mask, an organosiloxane-based thin film, dry etching residue and a photoresist can be removed without corroding a low-dielectric-constant interlayer dielectric film, a wiring material such as copper or an copper alloy, a barrier metal and a barrier dielectric film. According to preferred embodiments of the present invention, damage to copper wiring lines is suppressed even in cases where an acid is added into the cleaning liquid and significant decomposition of hydrogen peroxide is not caused even in cases where titanium is added into the cleaning liquid.

摘要翻译： 通过使用含有10〜30质量％的过氧化氢的清洗液，0.005〜10质量％的氢氧化季铵，0.005〜5质量％的氢氧化钾，0.000005〜0.005质量％的 氨基聚亚甲基膦酸和水，硬掩模，有机硅氧烷类薄膜，干蚀刻残渣和光致抗蚀剂可以被除去而不腐蚀低介电常数的层间电介质膜，诸如铜或铜合金的布线材料， 阻挡金属和阻挡电介质膜。 根据本发明的优选实施方式，即使在添加了清洗液的情况下，甚至在将酸添加到清洗液中也不会引起显着分解过氧化氢的情况下，也能抑制铜布线的损伤。