-
公开(公告)号：US11479744B2
公开(公告)日：2022-10-25
申请号：US16976614
申请日：2019-02-27
发明人： Toshiyuki Oie , Akinobu Horita , Kenji Yamada , Takahiro Kikunaga
摘要： The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.
-
2.发明申请公开(公告)号：US20150210966A1
公开(公告)日：2015-07-30
申请号：US14432040
申请日：2013-11-29
发明人： Kenji Shimada , Toshiyuki Oie , Ryota Nakayama , Masaru Ohto
IPC分类号： C11D11/00 , C11D7/04 , H01L21/768 , C11D7/06 , C11D7/36 , H01L21/033 , H01L21/02 , C11D7/32
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/04 , C11D7/06 , C11D7/3209 , C11D7/36 , C23G1/20 , C23G1/205 , G03F7/0752 , G03F7/423 , G03F7/425 , H01L21/02063 , H01L21/0332 , H01L21/0337 , H01L21/31133 , H01L21/31144 , H01L21/32134 , H01L21/32139 , H01L21/76814 , H01L21/76883 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： By cleaning with use of a cleaning liquid that contains 10-30% by mass of hydrogen peroxide, 0.005-10% by mass of a quaternary ammonium hydroxide, 0.005-5% by mass of potassium hydroxide, 0.000005-0.005% by mass of an amino polymethylene phosphonic acid and water, a hard mask, an organosiloxane-based thin film, dry etching residue and a photoresist can be removed without corroding a low-dielectric-constant interlayer dielectric film, a wiring material such as copper or an copper alloy, a barrier metal and a barrier dielectric film. According to preferred embodiments of the present invention, damage to copper wiring lines is suppressed even in cases where an acid is added into the cleaning liquid and significant decomposition of hydrogen peroxide is not caused even in cases where titanium is added into the cleaning liquid.
摘要翻译： 通过使用含有10〜30质量％的过氧化氢的清洗液，0.005〜10质量％的氢氧化季铵，0.005〜5质量％的氢氧化钾，0.000005〜0.005质量％的 氨基聚亚甲基膦酸和水，硬掩模，有机硅氧烷类薄膜，干蚀刻残渣和光致抗蚀剂可以被除去而不腐蚀低介电常数的层间电介质膜，诸如铜或铜合金的布线材料， 阻挡金属和阻挡电介质膜。 根据本发明的优选实施方式，即使在添加了清洗液的情况下，甚至在将酸添加到清洗液中也不会引起显着分解过氧化氢的情况下，也能抑制铜布线的损伤。
-
公开(公告)号：US11629315B2
公开(公告)日：2023-04-18
申请号：US17050234
申请日：2019-04-25
发明人： Toshiyuki Oie , Takahiro Kikunaga , Akinobu Horita , Kenji Yamada
摘要： An aqueous composition includes (A) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 50 mass % of an acid other than the C4-13 alkylphosphonic acid, the C4-13 alkylphosphonate ester and the C4-13 alkyl phosphate or a salt thereof, with respect to the total amount of the aqueous composition.
-
公开(公告)号：US10651028B2
公开(公告)日：2020-05-12
申请号：US15505654
申请日：2015-10-02
发明人： Toshiyuki Oie , Kenji Shimada
IPC分类号： H01L21/02 , C11D7/04 , C11D17/08 , C11D7/12 , C11D7/06 , C11D7/32 , H01L21/311 , H01L21/304 , C11D3/30 , C11D3/43 , C11D11/00 , G03F7/42 , C22C38/12
摘要： According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.
-
公开(公告)号：US10689573B2
公开(公告)日：2020-06-23
申请号：US16068811
申请日：2017-09-22
发明人： Akinobu Horita , Kenji Shimada , Kenichi Takahashi , Toshiyuki Oie , Aya Ito
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213
摘要： The present invention relates to a wet etching composition for a substrate having a SiN layer and a Si layer, comprising 0.1-50 mass % fluorine compound (A), 0.04-10 mass % oxidant (B) and water (D) and having pH in a range of 2.0-5.0. The present invention also relates to a wet etching process for a semiconductor substrate having a SiN layer and a Si layer, the process using the wet etching composition. The composition of the present invention can be used for a substrate having a SiN layer and a Si layer to enhance removal selectivity of Si over SiN while reducing corrosion of the device and the exhaust line and air pollution caused by a volatile component generated upon use and further a burden on the environment caused by the nitrogen content contained in the composition.
-
6.发明授权公开(公告)号：US09422512B2
公开(公告)日：2016-08-23
申请号：US14432040
申请日：2013-11-29
发明人： Kenji Shimada , Toshiyuki Oie , Ryota Nakayama , Masaru Ohto
IPC分类号： C11D3/39 , C11D11/00 , C23G1/20 , H01L21/02 , H01L21/311 , H01L21/3213 , C11D7/06 , C11D7/32 , C11D7/36 , C11D7/04 , H01L21/033 , H01L21/768 , H01L23/532
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/04 , C11D7/06 , C11D7/3209 , C11D7/36 , C23G1/20 , C23G1/205 , G03F7/0752 , G03F7/423 , G03F7/425 , H01L21/02063 , H01L21/0332 , H01L21/0337 , H01L21/31133 , H01L21/31144 , H01L21/32134 , H01L21/32139 , H01L21/76814 , H01L21/76883 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： By cleaning with use of a cleaning liquid that contains 10-30% by mass of hydrogen peroxide, 0.005-10% by mass of a quaternary ammonium hydroxide, 0.005-5% by mass of potassium hydroxide, 0.000005-0.005% by mass of an amino polymethylene phosphonic acid and water, a hard mask, an organosiloxane-based thin film, dry etching residue and a photoresist can be removed without corroding a low-dielectric-constant interlayer dielectric film, a wiring material such as copper or an copper alloy, a barrier metal and a barrier dielectric film. According to preferred embodiments of the present invention, damage to copper wiring lines is suppressed even in cases where an acid is added into the cleaning liquid and significant decomposition of hydrogen peroxide is not caused even in cases where titanium is added into the cleaning liquid.
摘要翻译： 通过使用含有10〜30质量％的过氧化氢的清洗液，0.005〜10质量％的氢氧化季铵，0.005〜5质量％的氢氧化钾，0.000005〜0.005质量％的 氨基聚亚甲基膦酸和水，硬掩模，有机硅氧烷类薄膜，干蚀刻残渣和光致抗蚀剂可以被除去而不腐蚀低介电常数的层间电介质膜，诸如铜或铜合金的布线材料， 阻挡金属和阻挡电介质膜。 根据本发明的优选实施方式，即使在添加了清洗液的情况下，甚至在将酸添加到清洗液中也不会引起显着分解过氧化氢的情况下，也能抑制铜布线的损伤。
-
公开(公告)号：US11352593B2
公开(公告)日：2022-06-07
申请号：US17047571
申请日：2019-04-25
发明人： Akinobu Horita , Toshiyuki Oie , Takahiro Kikunaga , Kenji Yamada
摘要： An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.
-
公开(公告)号：US10160938B2
公开(公告)日：2018-12-25
申请号：US15502659
申请日：2015-10-02
发明人： Toshiyuki Oie , Kenji Shimada
IPC分类号： C11D7/26 , C11D11/00 , C11D7/04 , C11D17/08 , G03F7/42 , C11D7/06 , C11D7/10 , C11D7/32 , H01L21/02 , H01L21/311
摘要： According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.
-
公开(公告)号：US10035978B2
公开(公告)日：2018-07-31
申请号：US15124478
申请日：2015-04-20
发明人： Toshiyuki Oie , Kenji Shimada
IPC分类号： C11D7/06 , C11D11/00 , H01L21/304 , B08B3/08 , C11D7/32 , C11D7/50 , H01L21/02 , H01L21/3065 , H01L21/308 , C11D3/39 , C11D7/10 , C11D7/12
CPC分类号： C11D11/0047 , B08B3/08 , C11D3/3947 , C11D7/06 , C11D7/10 , C11D7/105 , C11D7/12 , C11D7/3209 , C11D7/5004 , C11D7/5009 , C11D7/5013 , C11D7/5022 , H01L21/02057 , H01L21/02063 , H01L21/02071 , H01L21/304 , H01L21/3065 , H01L21/3085
摘要： The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.
-
公开(公告)号：US11613720B2
公开(公告)日：2023-03-28
申请号：US17049828
申请日：2019-04-25
发明人： Toshiyuki Oie , Akinobu Horita , Takahiro Kikunaga , Kenji Yamada
摘要： An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.019 秒)
