公开(公告)号：US12125709B2

公开(公告)日：2024-10-22

申请号：US18195570

申请日：2023-05-10

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Shoi Suzuki ,  Akifumi Yao

IPC分类号： H01L21/311 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/02 ,  H01L21/302 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/31116 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/02164 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/67069 ,  H01L21/67103

摘要： The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

公开(公告)号：US11984319B2

公开(公告)日：2024-05-14

申请号：US16783530

申请日：2020-02-06

申请人： TOKYO ELECTRON LIMITED

发明人： Kensaku Narushima ,  Nagayasu Hiramatsu ,  Takanobu Hotta ,  Atsushi Matsumoto ,  Masato Araki ,  Hideaki Yamasaki

IPC分类号： H01L21/285 ,  C09K13/08 ,  C23C16/06 ,  C23C16/455 ,  C23C16/46 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/67

CPC分类号： H01L21/28556 ,  C09K13/08 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/67063

摘要： There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

公开(公告)号：US20240150654A1

公开(公告)日：2024-05-09

申请号：US18077509

申请日：2022-12-08

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Gi Young KIM ,  Hak Soo KIM ,  Jeong Sik OH ,  Myung Ho LEE ,  Myung Geun SONG

IPC分类号： C09K13/08

CPC分类号： C09K13/08 ,  H01L21/30604

摘要： The present invention relates to a composition for selectively etching silicon on a surface on which a silicon oxide film (SiO2) and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface.

公开(公告)号：US11970647B2

公开(公告)日：2024-04-30

申请号：US17624872

申请日：2020-06-19

申请人： BASF SE

发明人： Francisco Javier Lopez Villanueva ,  Yeni Burk ,  Daniel Loeffler ,  Jan Ole Mueller ,  Marcel Brill ,  Patrick Wilke ,  Jean-Pierre Berkan Lindner ,  Volodymyr Boyko

IPC分类号： C09K13/08 ,  C09K13/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C09K13/08 ,  C09K13/00 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134

摘要： Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including:



(a) an oxidizing agent,
(b) an acid selected from an inorganic acid and an organic acid,
(c) an etchant including a source of fluoride ions,
(d) a polyvinylpyrrolidone (PVP), and
(e) water.

公开(公告)号：US11912921B2

公开(公告)日：2024-02-27

申请号：US17398181

申请日：2021-08-10

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Mick Bjelopavlic ,  Carl Ballesteros

IPC分类号： C09K13/10 ,  H01L21/306 ,  C09K13/08

CPC分类号： C09K13/10 ,  C09K13/08 ,  H01L21/30604

摘要： The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20240045108A1

公开(公告)日：2024-02-08

申请号：US17641410

申请日：2021-10-19

申请人： Sang-Ro LEE ,  Katsushi IGARASHI

发明人： Sang-Ro LEE ,  Katsushi IGARASHI

IPC分类号： G02B1/118 ,  C09K13/08 ,  C03C23/00 ,  C03C15/00

CPC分类号： G02B1/118 ,  C09K13/08 ,  C03C23/0075 ,  C03C15/00 ,  C03C23/0085

摘要： A wet etching method according to the present disclosure includes cleaning the glass, forming a nanoscale pattern by wet-etching the cleaned glass, and cleaning and drying the nano-patterned glass, wherein a wet etching solution used in the wet etching includes hydrofluoric acid and a surfactant. According to the present disclosure, a glass having high transmittance/low reflectance can be provided. The glass can be applied to an optical device and a display including a mobile device.

公开(公告)号：US20230407178A1

公开(公告)日：2023-12-21

申请号：US18251334

申请日：2021-10-27

申请人： STELLA CHEMIFA CORPORATION

发明人： Kazuya DATE ,  Nodoka NAKATA ,  Rui HASEBE ,  Keiichi NII

IPC分类号： C09K13/08 ,  H01L21/311

CPC分类号： C09K13/08 ,  H01L21/31111

摘要： A micromachining processing agent and a micromachining processing method capable of selectively micromachining a silicon oxide film when a laminated film including at least a silicon nitride film, a silicon oxide film, and a silicon alloy film is micromachined. The micromachining processing agent is used for micromachining of a laminated film including at least a silicon oxide film, a silicon nitride film, and a silicon alloy film. The micromachining processing agent contains: (a) 0.01 to 50 mass % of hydrogen fluoride; (b) 0.1 to 40 mass % of ammonium fluoride; (c) 0.001 to 10 mass % of a water-soluble polymer; (d) 0.001 to 1 mass % of an organic compound having a carboxyl group; and (e) water as an optional component, in which the water-soluble polymer is at least one selected from a group consisting of acrylic acid, ammonium acrylate, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

公开(公告)号：US11739427B2

公开(公告)日：2023-08-29

申请号：US17646274

申请日：2021-12-28

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC分类号： C23F4/02 ,  C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/31138

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20230101156A1

公开(公告)日：2023-03-30

申请号：US17893303

申请日：2022-08-23

申请人： FUJIFILM Corporation

发明人： Kohei HAYASHI ,  Tomonori TAKAHASHI

IPC分类号： C09K13/06 ,  C09K13/08 ,  C11D11/00 ,  C11D1/65

摘要： A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

公开(公告)号：US20230002675A1

公开(公告)日：2023-01-05

申请号：US17756223

申请日：2020-09-30

申请人： Versum Materials US, LLC

发明人： CHUNG-YI CHANG ,  WEN DAR LIU ,  YI-CHIA LEE

IPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/3213

摘要： The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.