公开(公告)号：US12012540B2

公开(公告)日：2024-06-18

申请号：US17749868

申请日：2022-05-20

申请人： ENTEGRIS, INC.

发明人： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC分类号： C09K13/06 ,  B81C1/00 ,  C09K13/04 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C09K13/06 ,  B81C1/00539 ,  C09K13/04 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/32134

摘要： The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

公开(公告)号：US20240172475A1

公开(公告)日：2024-05-23

申请号：US18381169

申请日：2023-10-17

申请人： HANNSTAR DISPLAY CORPORATION

发明人： Li-Fang Chiu ,  Ching-Chieh Lee ,  Chien-Hung Wu

IPC分类号： H10K59/12 ,  C09K13/04 ,  H10K71/20

CPC分类号： H10K59/1201 ,  C09K13/04 ,  H10K71/231

摘要： The invention discloses an etching solution and a manufacturing method of a display panel. The method includes following steps: providing a first substrate; forming a conductive layer stack including a first sub-layer, a second sub-layer and a third sub-layer, each of the first sub-layer and the second sub-layer includes a transparent conductive material including indium-containing oxide, the third sub-layer is disposed between the first sub-layer and the second sub-layer, and the third sub-layer includes silver or silver alloy; performing an etching process, an etching solution is used to etch the first sub-layer, the second sub-layer and the third sub-layer to form a first patterned sub-layer, a second patterned sub-layer and a third patterned sub-layer, and the etching solution includes 1 to 2.6 wt % of nitric acid, 35 to 45 wt % of acetic acid, 35 to 45 wt % of phosphoric acid and a remaining amount of water.

公开(公告)号：US20240067878A1

公开(公告)日：2024-02-29

申请号：US18239303

申请日：2023-08-29

申请人： TOKUYAMA CORPORATION

发明人： Tatsuya HITOMI ,  Yoshiki SEIKE ,  Kohsuke NORO ,  Kohshiro OKIMURA

IPC分类号： C09K13/04 ,  H01L21/306

CPC分类号： C09K13/04 ,  H01L21/30604

摘要： A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.

公开(公告)号：US20230340326A1

公开(公告)日：2023-10-26

申请号：US18341929

申请日：2023-06-27

申请人： FUJIFILM Corporation

发明人： Nobuaki SUGIMURA ,  Tomonori Takahashi ,  Hiroyuki Seki ,  Atsushi Mizutani

IPC分类号： C09K13/04 ,  H01L21/02 ,  H01L21/3213

CPC分类号： C09K13/04 ,  H01L21/02071 ,  H01L21/32134

摘要： A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.

公开(公告)号：US11732190B2

公开(公告)日：2023-08-22

申请号：US16940515

申请日：2020-07-28

申请人： FUJIFILM Corporation

发明人： Nobuaki Sugimura ,  Tomonori Takahashi ,  Hiroyuki Seki ,  Atsushi Mizutani

IPC分类号： C09K13/04 ,  H01L21/02 ,  H01L21/3213

CPC分类号： C09K13/04 ,  H01L21/02071 ,  H01L21/32134

摘要： The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.

公开(公告)号：US11697767B2

公开(公告)日：2023-07-11

申请号：US17341138

申请日：2021-06-07

申请人： ENTEGRIS, INC.

发明人： Steven Michael Bilodeau ,  SeongJin Hong ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Emanuel I. Cooper

IPC分类号： C09K13/06 ,  H01L21/311 ,  C09K13/04 ,  C09K13/00 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/306 ,  C23F1/14

CPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C23F1/14 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/32134

摘要： Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US11530355B2

公开(公告)日：2022-12-20

申请号：US17093654

申请日：2020-11-10

申请人： SOULBRAIN CO., LTD.

发明人： Jung Hun Lim ,  Jin Uk Lee ,  Jae Wan Park

IPC分类号： C09K13/06 ,  H01L21/306 ,  H01L21/311 ,  C09K13/04

摘要： A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20220132672A1

公开(公告)日：2022-04-28

申请号：US17570571

申请日：2022-01-07

申请人： C3 Nano, Inc.

发明人： Xiqiang Yang ,  Yadong Cao ,  Ajay Virkar

IPC分类号： H05K3/06 ,  H05K1/02 ,  C09K13/04

摘要： A method is described for method for patterning a metal layer interfaced with a transparent conductive film, in which the method comprises contacting a structure through a patterned mask with an etching solution comprising Fe+3 ions, wherein the structure comprises the metal layer comprising copper, nickel, aluminum or alloys thereof covering at least partially a transparent conductive film with conductive elements comprising silver, to expose a portion of the transparent conductive film. Etching solutions and the etched structures are also described.

公开(公告)号：US20220033709A1

公开(公告)日：2022-02-03

申请号：US17389879

申请日：2021-07-30

申请人： ENTEGRIS, INC.

发明人： Hsing-Chen WU ,  Emanuel I. COOPER ,  Min-Chieh YANG

IPC分类号： C09K13/04 ,  H01L21/311

摘要： Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

公开(公告)号：US11225721B2

公开(公告)日：2022-01-18

申请号：US16284629

申请日：2019-02-25

申请人： SAMSUNG DISPLAY CO., LTD. ,  DONGWOO FINE-CHEM Co., Ltd.

发明人： Jinhyung Kim ,  Joohwan Chung ,  Jinsook Kim ,  Haccheol Kim ,  Byungsu Lee ,  Changsoo Kim ,  Jungseek Jung ,  Dongki Kim ,  Sangtae Kim ,  Giyong Nam ,  Youngchul Park ,  Kyungbo Shim ,  Daesung Lim ,  Sanghoon Jang

IPC分类号： C23F1/30 ,  H01L21/3213 ,  C09K13/04 ,  C09K13/00 ,  H01L21/465 ,  C09K13/06 ,  H01L21/302 ,  H01L21/306 ,  H01L29/786 ,  C23F1/16

摘要： A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.