公开(公告)号：US20240067878A1

公开(公告)日：2024-02-29

申请号：US18239303

申请日：2023-08-29

申请人： TOKUYAMA CORPORATION

发明人： Tatsuya HITOMI ,  Yoshiki SEIKE ,  Kohsuke NORO ,  Kohshiro OKIMURA

IPC分类号： C09K13/04 ,  H01L21/306

CPC分类号： C09K13/04 ,  H01L21/30604

摘要： A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.

公开(公告)号：US20240254389A1

公开(公告)日：2024-08-01

申请号：US18394206

申请日：2023-12-22

申请人： TOKUYAMA CORPORATION

发明人： Yoshiki SEIKE ,  Tatsuya HITOMI ,  Kohsuke NORO

IPC分类号： C09K13/00 ,  H01L21/306

CPC分类号： C09K13/00 ,  H01L21/30604

摘要： A silicon etching solution containing an organic alkaline compound and water, the silicon etching solution further containing a compound represented by Formula (1) below, wherein a content of the compound represented by Formula (1) is 100 mass ppm or more:






where R1 is a single bond or a hydrocarbon group having carbon number from 1 to 5, R2 and R3 are each independently a hydrogen atom, a halogen atom, a hydroxy group, an amino group, an acetyl group, a carboxy group, a silyl group, a boryl group, a nitrile group, a thio group, a seleno group, or a hydrocarbon group having carbon number from 1 to 10, and these groups optionally further have a substituent.

公开(公告)号：US20240112917A1

公开(公告)日：2024-04-04

申请号：US18274856

申请日：2022-02-08

申请人： TOKUYAMA CORPORATION

发明人： Yoshiki SEIKE ,  Manami OSHIO ,  Naoto NOMURA ,  Kohsuke NORO ,  Seiji TONO

IPC分类号： H01L21/306 ,  C09K13/00

CPC分类号： H01L21/30604 ,  C09K13/00

摘要： [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium.
[Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.