- 专利标题： Compositions and methods for selectively etching silicon nitride films
-
申请号： US17749868申请日： 2022-05-20
-
公开(公告)号： US12012540B2公开(公告)日： 2024-06-18
- 发明人: Steven M. Bilodeau , Claudia Yevenes , Juhee Yeo
- 申请人： ENTEGRIS, INC.
- 申请人地址： US MA Billerica
- 专利权人： ENTEGRIS, INC.
- 当前专利权人： ENTEGRIS, INC.
- 当前专利权人地址： US MA Billerica
- 主分类号： C09K13/06
- IPC分类号： C09K13/06 ; B81C1/00 ; C09K13/04 ; H01L21/306 ; H01L21/311 ; H01L21/3213
摘要：
The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.
公开/授权文献
信息查询
