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公开(公告)号：US10319585B2
公开(公告)日：2019-06-11
申请号：US15722343
申请日：2017-10-02
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/02 , H01J37/32 , C23C16/02 , C23C16/04 , C23C16/06 , C23C16/455 , C23C16/509 , H01J37/26
摘要： A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.
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公开(公告)号：US11629404B2
公开(公告)日：2023-04-18
申请号：US16353227
申请日：2019-03-14
摘要： A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.
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公开(公告)号：US11069512B2
公开(公告)日：2021-07-20
申请号：US15671906
申请日：2017-08-08
IPC分类号： H01J37/32 , C23C16/455 , C23C16/04 , C23C16/34 , C23C16/509 , C23C16/14 , C23C16/56 , H01L21/768 , C23C16/06 , C23C16/458 , C23C16/46 , C23C16/50 , H01L21/285
摘要： A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.
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公开(公告)号：US11984319B2
公开(公告)日：2024-05-14
申请号：US16783530
申请日：2020-02-06
发明人： Kensaku Narushima , Nagayasu Hiramatsu , Takanobu Hotta , Atsushi Matsumoto , Masato Araki , Hideaki Yamasaki
IPC分类号： H01L21/285 , C09K13/08 , C23C16/06 , C23C16/455 , C23C16/46 , H01L21/306 , H01L21/3213 , H01L21/324 , H01L21/67
CPC分类号： H01L21/28556 , C09K13/08 , C23C16/06 , C23C16/45525 , C23C16/46 , H01L21/30604 , H01L21/32133 , H01L21/324 , H01L21/67063
摘要： There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.
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公开(公告)号：US11753719B2
公开(公告)日：2023-09-12
申请号：US16352264
申请日：2019-03-13
发明人： Kennan Mo , Kouichi Sekido , Takanobu Hotta , Nagayasu Hiramatsu , Atsushi Matsumoto , Kensaku Narushima
IPC分类号： C23C16/52
CPC分类号： C23C16/52
摘要： A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.
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公开(公告)号：US10910225B2
公开(公告)日：2021-02-02
申请号：US16201129
申请日：2018-11-27
IPC分类号： H01L21/285 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/768 , H01L21/28
摘要： There is provided a method of forming a tungsten nitride film on a substrate to be processed, including: forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas; and nitriding the tungsten film by supplying a nitrogen-containing gas.
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