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公开(公告)号：US10968514B2
公开(公告)日：2021-04-06
申请号：US16193297
申请日：2018-11-16
发明人： Kohichi Satoh , Hideaki Yamasaki , Motoko Nakagomi , Junya Oka
IPC分类号： H01L21/687 , C23C16/458 , H01J37/32 , C23C16/505 , C23C16/08 , H01L21/285
摘要： There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.
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公开(公告)号：US10319585B2
公开(公告)日：2019-06-11
申请号：US15722343
申请日：2017-10-02
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/02 , H01J37/32 , C23C16/02 , C23C16/04 , C23C16/06 , C23C16/455 , C23C16/509 , H01J37/26
摘要： A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.
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公开(公告)号：US20240363410A1
公开(公告)日：2024-10-31
申请号：US18620326
申请日：2024-03-28
发明人： Ryota Yonezawa , Kai-Hung Yu , Yuji Otsuki , Kenichi Imakita , Atsushi Gomi , Kohichi Satoh , Tadahiro Ishizaka , Takashi Sakuma , Hidenao Suzuki
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/76804 , H01L21/76805
摘要： A method for forming a semiconductor device can include providing a substrate including a via in a dielectric layer, forming a ruthenium metal plug in the via, and at least part of the ruthenium metal plug can be formed directly on the dielectric layer in the via, forming a metal cap layer directly on the ruthenium metal plug, and forming a metallization layer, such as a copper-containing trench, over the ruthenium metal plug, such that the metal cap layer is between the metallization layer and the ruthenium metal plug, which can prevent intermixing of the ruthenium of the ruthenium metal plug with the metal or metals in the metallization layer.
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公开(公告)号：US09390933B2
公开(公告)日：2016-07-12
申请号：US14579262
申请日：2014-12-22
IPC分类号： H01L21/302 , H01L21/306 , H01L21/67
CPC分类号： H01L21/30604 , H01L21/02063 , H01L21/31116 , H01L21/67069 , H01L21/6708 , H01L21/76814 , H01L21/76897
摘要： There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.
摘要翻译： 在氮化硅膜和形成在被处理基板表面上的氧化硅膜之间有选择性地蚀刻氧化硅膜的方法，该方法包括：在真空气氛下，间歇地供给第一处理 将由氟化氢气体和氨气组成的气体和由氮，氢和氟化合物构成的第二处理气体加入到待加工的基板上。
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公开(公告)号：US08673778B2
公开(公告)日：2014-03-18
申请号：US13684389
申请日：2012-11-23
发明人： Kohichi Satoh
IPC分类号： H01L21/302
CPC分类号： H01L21/4814 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber includes forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas and adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film. The film forming method further includes depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber.
摘要翻译： 在处理室中在减压气氛中加热衬底的同时在衬底的表面上形成钨膜的钨膜形成方法包括通过交替地重复供给WF6来在衬底的表面上形成用于钨成核的初始钨膜 作为钨原料的气体和在处理室中作为还原气体的H2气体的供给，同时在处理室中在WF 6气体和H 2气体的供给之间进行吹扫并吸附含有成核材料的气体 到初始钨膜的表面上。 成膜方法还包括通过将WF 6气体和H 2气体供应到处理室中来沉积用于阻挡初始钨膜的结晶度的结晶阻挡钨膜。
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公开(公告)号：US11993841B2
公开(公告)日：2024-05-28
申请号：US16996426
申请日：2020-08-18
发明人： Masato Araki , Kohichi Satoh , Tadahiro Ishizaka , Takashi Sakuma
CPC分类号： C23C16/405 , C23C16/52
摘要： There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.
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公开(公告)号：US11702734B2
公开(公告)日：2023-07-18
申请号：US17453528
申请日：2021-11-04
IPC分类号： C23C16/06 , C23C16/18 , C23C16/52 , C23C16/455
CPC分类号： C23C16/18 , C23C16/45557 , C23C16/52
摘要： A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.
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公开(公告)号：US11280002B2
公开(公告)日：2022-03-22
申请号：US16574977
申请日：2019-09-18
发明人： Kohichi Satoh , Toshiaki Fujisato , Daisuke Toriya
IPC分类号： C23C16/458
摘要： A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.
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公开(公告)号：US20190161853A1
公开(公告)日：2019-05-30
申请号：US16312864
申请日：2017-07-11
发明人： Shintaro Aoyama , Mikio Suzuki , Yumiko Kawano , Kohichi Satoh
IPC分类号： C23C16/02 , C23C16/14 , C23C16/24 , H01L21/285
摘要： Provided is a method for forming a tungsten film in which a tungsten film is formed on the surface of a substrate, the method including: disposing a substrate having an amorphous layer on the surface thereof inside a treatment container under a depressurized atmosphere; heating the substrate inside the treatment container; and supplying, into the treatment container, WF6 gas which is a tungsten raw material and H2 gas which is a reducing gas, and forming a main tungsten film on the amorphous layer.
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