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公开(公告)号：US20230212457A1
公开(公告)日：2023-07-06
申请号：US18077499
申请日：2022-12-08
发明人： Jeong Sik OH , Tae Ho KIM , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/08 , H01L21/311
CPC分类号： C09K13/08 , H01L21/31111
摘要： The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.-
2.发明公开公开(公告)号：US20230167360A1
公开(公告)日：2023-06-01
申请号：US17994173
申请日：2022-11-25
发明人： Hyoungsik Kim , Jonghee Park , Sehoon Kim , Boyeon Lee , Yangryeong Kim , Seokil Jung , Ikjoon Kim , Sangseung Park , Wonho Noh , Mingyeong Jeong
摘要： An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.
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公开(公告)号：US20220348825A1
公开(公告)日：2022-11-03
申请号：US17660342
申请日：2022-04-22
发明人： Jeong Sik OH , Hak Soo KIM , Myung Ho LEE
IPC分类号： C09K13/08 , H01L21/306
摘要： Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.
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公开(公告)号：US11091695B2
公开(公告)日：2021-08-17
申请号：US16855864
申请日：2020-04-22
发明人： Hye Hee Lee , Hyeon Woo Park , Myung Ho Lee , Myung Geun Song
IPC分类号： C09K13/06
摘要： Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
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公开(公告)号：US10982144B2
公开(公告)日：2021-04-20
申请号：US16557680
申请日：2019-08-30
发明人： Dong Hyun Kim , Hyeon Woo Park , Jang Woo Cho , Tae Ho Kim , Myung Ho Lee , Myung Geun Song
IPC分类号： H01L21/311 , C09K13/06 , C09K13/04
摘要： Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
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公开(公告)号：US20200071614A1
公开(公告)日：2020-03-05
申请号：US16557680
申请日：2019-08-30
发明人： Dong Hyun KIM , Hyeon Woo PARK , Jang Woo CHO , Tae Ho KIM , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/06 , H01L21/311
摘要： Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
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7.发明公开公开(公告)号：US20230287574A1
公开(公告)日：2023-09-14
申请号：US18156969
申请日：2023-01-19
发明人： Sang Seung PARK , Yang Ryoung KIM , Bo Yeon LEE , Min Gyeong JEONG , Se Hoon KIM
IPC分类号： C23F1/40 , H01L21/3213 , H01L21/3205 , H01L21/02
CPC分类号： C23F1/40 , H01L21/0214 , H01L21/02164 , H01L21/32051 , H01L21/32134
摘要： Provided are an etchant composition for a titanium-containing metal layer, and a method using the same, which may selectively etch the titanium-containing metal layer without affecting the quality of other films during a process of manufacturing semiconductor and display devices, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.
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公开(公告)号：US20230017238A1
公开(公告)日：2023-01-19
申请号：US17844107
申请日：2022-06-20
发明人： Hye Ji KIM , Jin Ho YOU , Namgi CHO
摘要： The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.
According to the present invention, it is possible to prevent corrosion of the underlying film while improving the peeling force for the photoresist, and to improve the stability of the composition over time.-
公开(公告)号：US20220403243A1
公开(公告)日：2022-12-22
申请号：US17739489
申请日：2022-05-09
发明人： Jeong Sik OH , Tae Ho KIM , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/08
摘要： The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.-
公开(公告)号：US20220380670A1
公开(公告)日：2022-12-01
申请号：US17737636
申请日：2022-05-05
发明人： Tae Ho KIM , Jeong Sik OH , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
摘要： The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.
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