-
公开(公告)号：US20230212457A1
公开(公告)日：2023-07-06
申请号：US18077499
申请日：2022-12-08
发明人： Jeong Sik OH , Tae Ho KIM , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/08 , H01L21/311
CPC分类号： C09K13/08 , H01L21/31111
摘要： The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.-
公开(公告)号：US20220348825A1
公开(公告)日：2022-11-03
申请号：US17660342
申请日：2022-04-22
发明人： Jeong Sik OH , Hak Soo KIM , Myung Ho LEE
IPC分类号： C09K13/08 , H01L21/306
摘要： Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.
-
公开(公告)号：US20200071614A1
公开(公告)日：2020-03-05
申请号：US16557680
申请日：2019-08-30
发明人： Dong Hyun KIM , Hyeon Woo PARK , Jang Woo CHO , Tae Ho KIM , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/06 , H01L21/311
摘要： Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
-
公开(公告)号：US20230086417A1
公开(公告)日：2023-03-23
申请号：US17871094
申请日：2022-07-22
发明人： Jeong Sik OH , Tae Ho KIM , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
摘要： The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.
According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.-
公开(公告)号：US20220135915A1
公开(公告)日：2022-05-05
申请号：US17447640
申请日：2021-09-14
发明人： Jun HER , Na Rae YIM , Hyun Jin JUNG , Myung Ho LEE , Myung Geun SONG
摘要： A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.
-
公开(公告)号：US20200339879A1
公开(公告)日：2020-10-29
申请号：US16855864
申请日：2020-04-22
发明人： Hye Hee LEE , Hyeon Woo PARK , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/06
摘要： Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
-
7.发明申请公开(公告)号：US20190382659A1
公开(公告)日：2019-12-19
申请号：US16435315
申请日：2019-06-07
发明人： Dong Hyun KIM , Hyeon Woo PARK , Du Won LEE , Jang Woo CHO , Myung Ho LEE
摘要： Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.
-
公开(公告)号：US20220403243A1
公开(公告)日：2022-12-22
申请号：US17739489
申请日：2022-05-09
发明人： Jeong Sik OH , Tae Ho KIM , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
IPC分类号： C09K13/08
摘要： The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.-
公开(公告)号：US20220380670A1
公开(公告)日：2022-12-01
申请号：US17737636
申请日：2022-05-05
发明人： Tae Ho KIM , Jeong Sik OH , Gi Young KIM , Myung Ho LEE , Myung Geun SONG
摘要： The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.-
公开(公告)号：US20220089952A1
公开(公告)日：2022-03-24
申请号：US17446414
申请日：2021-08-30
发明人： Dong Hyun KIM , Hyeon Woo PARK , Sung Jun HONG , Myung Ho LEE , Myung Geun SONG , Hoon Sik KIM , Jae Jung KO , Myong Euy LEE , Jun Hyeok HWANG
IPC分类号： C09K13/06 , C23F1/02 , C23F1/44 , H01L21/3213
摘要： Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
-
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.017 秒)
