公开(公告)号：US20220089952A1

公开(公告)日：2022-03-24

申请号：US17446414

申请日：2021-08-30

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE ,  Jun Hyeok HWANG

IPC分类号： C09K13/06 ,  C23F1/02 ,  C23F1/44 ,  H01L21/3213

摘要： Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

公开(公告)号：US20220089953A1

公开(公告)日：2022-03-24

申请号：US17446435

申请日：2021-08-30

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE

IPC分类号： C09K13/06 ,  H01L21/311

摘要： Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

公开(公告)号：US20220089951A1

公开(公告)日：2022-03-24

申请号：US17446408

申请日：2021-08-30

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE ,  Jun Hyeok HWANG

IPC分类号： C09K13/06 ,  H01L21/311

摘要： Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.