- 专利标题： ETCHING COMPOSITION AND ETCHING METHOD USING THE SAME
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申请号： US16855864申请日： 2020-04-22
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公开(公告)号： US20200339879A1公开(公告)日： 2020-10-29
- 发明人: Hye Hee LEE , Hyeon Woo PARK , Myung Ho LEE , Myung Geun SONG
- 申请人： ENF TECHNOLOGY CO., LTD.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f438f28
- 主分类号： C09K13/06
- IPC分类号： C09K13/06
摘要：
Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
公开/授权文献
- US11091695B2 Etching composition and etching method using the same 公开/授权日：2021-08-17
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