公开(公告)号：US20230287574A1

公开(公告)日：2023-09-14

申请号：US18156969

申请日：2023-01-19

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Sang Seung PARK ,  Yang Ryoung KIM ,  Bo Yeon LEE ,  Min Gyeong JEONG ,  Se Hoon KIM

IPC分类号： C23F1/40 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02

CPC分类号： C23F1/40 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/32051 ,  H01L21/32134

摘要： Provided are an etchant composition for a titanium-containing metal layer, and a method using the same, which may selectively etch the titanium-containing metal layer without affecting the quality of other films during a process of manufacturing semiconductor and display devices, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.

公开(公告)号：US20230303925A1

公开(公告)日：2023-09-28

申请号：US18157006

申请日：2023-01-19

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Sang Seung PARK ,  Yang Ryoung KIM ,  Bo Yeon LEE ,  Min Gyeong JEONG ,  Se Hoon KIM

IPC分类号： C09K13/06 ,  C09K13/02 ,  H01L21/3213

CPC分类号： C09K13/06 ,  C09K13/02 ,  H01L21/32133

摘要： Provided are an etchant composition of a titanium layer and a method using the same, which may selectively etch the titanium layer without affecting the quality of other layers during a process of manufacturing a semiconductor and a display device, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.