公开(公告)号：US11852913B2

公开(公告)日：2023-12-26

申请号：US17726557

申请日：2022-04-22

Applicant: HKC Corporation Limited ,  Chongqing HKC Optoelectronics Technology Co., Ltd.

Inventor： Chung-Kuang Chien

IPC: G02F1/1335 ,  G03F7/42

CPC classification number: G02F1/133516 ,  G03F7/425

Abstract: The present application discloses a manufacturing method of a display panel and a display panel. The manufacturing method includes the steps: forming a color filter layer on a substrate; confirming a colorfilter-to-be-stripped in the color filter layer; and stripping the colorfilter-to-be-stripped by using a selected stripping liquid; the color filter layer includes a first color filter, a second color filter and a third color filter; and the colorfilter-to-be-stripped includes one or two of the first color filter, the second color filter and the third color filter, and the method of stripping the colorfilter-to-be-stripped by the selected stripping liquid includes: letting the colorfilter-to-be-stripped react with the selected stripping liquid, and stripping the colorfilter-to-be-stripped by the selected stripping liquid, and forming a protective layer on the surface of the color filters except the colorfilter-to-be-stripped.

公开(公告)号：US20230317647A1

公开(公告)日：2023-10-05

申请号：US17827415

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Yang LIN ,  Chen-Yu LIU ,  Yung-Han CHUANG ,  Ming-Da CHENG ,  Ching-Yu CHANG

IPC: H01L23/00 ,  G03F7/42 ,  C11D11/00 ,  C11D3/30

CPC classification number: H01L24/03 ,  G03F7/425 ,  C11D11/0047 ,  C11D3/30 ,  H01L2224/0346 ,  H01L2224/0362

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.

公开(公告)号：US20180201884A1

公开(公告)日：2018-07-19

申请号：US15743529

申请日：2016-07-14

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： Yasuo Sugishima ,  Keeyoung Park ,  Thomas Dory

IPC: C11D11/00 ,  C11D7/08 ,  C11D7/50 ,  C11D7/32 ,  C11D7/26 ,  C23G5/032 ,  H01L21/02 ,  G03F7/42

CPC classification number: C11D11/0047 ,  C11D7/08 ,  C11D7/247 ,  C11D7/26 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5004 ,  C11D7/5022 ,  C23G5/032 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057

Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

公开(公告)号：US20180195030A1

公开(公告)日：2018-07-12

申请号：US15866830

申请日：2018-01-10

Applicant: DAICEL CORPORATION

Inventor： Yuichi SAKANISHI

IPC: C11D11/00 ,  C11D1/00 ,  C11D3/43 ,  G03F7/42

CPC classification number: C11D11/0047 ,  C11D1/008 ,  C11D1/72 ,  C11D3/2068 ,  C11D3/43 ,  C11D7/263 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31133

Abstract: Problem to be SolvedTo provide a composition that can efficiently remove a photoresist adhering to an edge portion and a back surface of a substrate, in a process of producing a mask which is used when the substrate is subjected to etching treatment to have an element, a circuit etc., formed thereon using the photoresist.SolutionThe composition for removing a resist of the present invention is a composition comprising a surfactant and a solvent, wherein the composition contains, as the surfactant, at least the following component (A).Component (A): a polyglycerol derivative represented by the following formula (a): RaO—(C3H5O2Ra)n—Ra  (a) wherein n represents the number of the repeating units, and is an integer of 2 to 60; and Ra identically or differently represents a hydrogen atom, a C1-18 hydrocarbon group or a C2-24 acyl group, provided that at least two of the (n+2) number of Ra are C1-18 hydrocarbon groups and/or C2-24 acyl groups.

公开(公告)号：US20180148669A1

公开(公告)日：2018-05-31

申请号：US15821217

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Makonnen Payne ,  Emmanuel I. Cooper ,  WonLae Kim ,  Eric Hong ,  Sean Kim

IPC: C11D3/33 ,  C11D1/62 ,  C11D3/28 ,  C11D3/06 ,  C11D3/20 ,  C11D3/43 ,  C11D3/39 ,  H01L21/02

CPC classification number: C11D3/33 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/06 ,  C11D3/2068 ,  C11D3/2082 ,  C11D3/28 ,  C11D3/3942 ,  C11D3/43 ,  C11D7/3209 ,  C11D7/36 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02068

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

公开(公告)号：US20180117900A1

公开(公告)日：2018-05-03

申请号：US15377043

申请日：2016-12-13

Applicant: Alan DOYLE ,  Kevin RAY ,  Travis SOFTIC ,  A. Paul KITSON

Inventor： Alan DOYLE ,  Kevin RAY ,  Travis SOFTIC ,  A. Paul KITSON

IPC: B41F7/00

CPC classification number: B41C1/1075 ,  G03F7/38 ,  G03F7/425

Abstract: Following cutting of a develop-on-press printing member, a treatment fluid having a pH greater than 6 is applied to one or both edges prior to its development and use in order to avoid ink lines during printing.

公开(公告)号：US09834746B2

公开(公告)日：2017-12-05

申请号：US14485947

申请日：2014-09-15

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Thomas Dory ,  Bing Du ,  Tomonori Takahashi ,  Emil A. Kneer

IPC: C11D3/26 ,  C11D3/28 ,  C11D3/33 ,  C11D3/43 ,  C11D11/00 ,  C11D7/50 ,  C11D7/32 ,  C11D3/20 ,  G03F7/42 ,  C11D3/00 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/2003 ,  C11D3/2068 ,  C11D3/2072 ,  C11D3/2079 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/2093 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/5022 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

公开(公告)号：US20170322495A1

公开(公告)日：2017-11-09

申请号：US15393586

申请日：2016-12-29

Applicant: UNIVERSITY-INDUSTRY FOUNDATION, YONSEI UNIVERSITY

Inventor： Sang Woo LIM ,  Eun Seok OH

IPC: G03F7/42 ,  H01L21/027 ,  B08B3/08

CPC classification number: G03F7/426 ,  C11D7/5009 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31133

Abstract: Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.

公开(公告)号：US20170293228A1

公开(公告)日：2017-10-12

申请号：US15096362

申请日：2016-04-12

Applicant: Dynaloy, LLC

Inventor： Richard Dalton Peters ,  Travis W. Acra ,  Kimberly Dona Pollard

IPC: G03F7/42

CPC classification number: G03F7/425

Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include a quaternary ammonium hydroxide an amine, and optionally a corrosion inhibitor and/or a sugar alcohol. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the substrate.

公开(公告)号：US20170256396A1

公开(公告)日：2017-09-07

申请号：US15061364

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang ,  Chien-Chih Chen ,  Chun-Kuang Chen ,  Siao-Shan Wang ,  Wei-Liang Lin

IPC: H01L21/027 ,  H01L21/311 ,  G03F7/32 ,  H01L21/02

CPC classification number: G03F7/327 ,  G03F7/0046 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/3086

Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; andselectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.