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公开(公告)号:US11852913B2
公开(公告)日:2023-12-26
申请号:US17726557
申请日:2022-04-22
Inventor: Chung-Kuang Chien
IPC: G02F1/1335 , G03F7/42
CPC classification number: G02F1/133516 , G03F7/425
Abstract: The present application discloses a manufacturing method of a display panel and a display panel. The manufacturing method includes the steps: forming a color filter layer on a substrate; confirming a colorfilter-to-be-stripped in the color filter layer; and stripping the colorfilter-to-be-stripped by using a selected stripping liquid; the color filter layer includes a first color filter, a second color filter and a third color filter; and the colorfilter-to-be-stripped includes one or two of the first color filter, the second color filter and the third color filter, and the method of stripping the colorfilter-to-be-stripped by the selected stripping liquid includes: letting the colorfilter-to-be-stripped react with the selected stripping liquid, and stripping the colorfilter-to-be-stripped by the selected stripping liquid, and forming a protective layer on the surface of the color filters except the colorfilter-to-be-stripped.
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公开(公告)号:US20230317647A1
公开(公告)日:2023-10-05
申请号:US17827415
申请日:2022-05-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Tzu-Yang LIN , Chen-Yu LIU , Yung-Han CHUANG , Ming-Da CHENG , Ching-Yu CHANG
CPC classification number: H01L24/03 , G03F7/425 , C11D11/0047 , C11D3/30 , H01L2224/0346 , H01L2224/0362
Abstract: A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.
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公开(公告)号:US20180201884A1
公开(公告)日:2018-07-19
申请号:US15743529
申请日:2016-07-14
Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
Inventor: Yasuo Sugishima , Keeyoung Park , Thomas Dory
CPC classification number: C11D11/0047 , C11D7/08 , C11D7/247 , C11D7/26 , C11D7/3209 , C11D7/3281 , C11D7/5004 , C11D7/5022 , C23G5/032 , G03F7/423 , G03F7/425 , H01L21/02057
Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
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公开(公告)号:US20180195030A1
公开(公告)日:2018-07-12
申请号:US15866830
申请日:2018-01-10
Applicant: DAICEL CORPORATION
Inventor: Yuichi SAKANISHI
CPC classification number: C11D11/0047 , C11D1/008 , C11D1/72 , C11D3/2068 , C11D3/43 , C11D7/263 , G03F7/425 , G03F7/426 , H01L21/31133
Abstract: Problem to be SolvedTo provide a composition that can efficiently remove a photoresist adhering to an edge portion and a back surface of a substrate, in a process of producing a mask which is used when the substrate is subjected to etching treatment to have an element, a circuit etc., formed thereon using the photoresist.SolutionThe composition for removing a resist of the present invention is a composition comprising a surfactant and a solvent, wherein the composition contains, as the surfactant, at least the following component (A).Component (A): a polyglycerol derivative represented by the following formula (a): RaO—(C3H5O2Ra)n—Ra (a) wherein n represents the number of the repeating units, and is an integer of 2 to 60; and Ra identically or differently represents a hydrogen atom, a C1-18 hydrocarbon group or a C2-24 acyl group, provided that at least two of the (n+2) number of Ra are C1-18 hydrocarbon groups and/or C2-24 acyl groups.
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公开(公告)号:US20180148669A1
公开(公告)日:2018-05-31
申请号:US15821217
申请日:2017-11-22
Applicant: Entegris, Inc.
Inventor: Makonnen Payne , Emmanuel I. Cooper , WonLae Kim , Eric Hong , Sean Kim
CPC classification number: C11D3/33 , C11D1/62 , C11D3/0073 , C11D3/06 , C11D3/2068 , C11D3/2082 , C11D3/28 , C11D3/3942 , C11D3/43 , C11D7/3209 , C11D7/36 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02068
Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.
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公开(公告)号:US20180117900A1
公开(公告)日:2018-05-03
申请号:US15377043
申请日:2016-12-13
Applicant: Alan DOYLE , Kevin RAY , Travis SOFTIC , A. Paul KITSON
Inventor: Alan DOYLE , Kevin RAY , Travis SOFTIC , A. Paul KITSON
IPC: B41F7/00
CPC classification number: B41C1/1075 , G03F7/38 , G03F7/425
Abstract: Following cutting of a develop-on-press printing member, a treatment fluid having a pH greater than 6 is applied to one or both edges prior to its development and use in order to avoid ink lines during printing.
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公开(公告)号:US09834746B2
公开(公告)日:2017-12-05
申请号:US14485947
申请日:2014-09-15
Applicant: Fujifilm Electronic Materials U.S.A., Inc.
Inventor: Thomas Dory , Bing Du , Tomonori Takahashi , Emil A. Kneer
IPC: C11D3/26 , C11D3/28 , C11D3/33 , C11D3/43 , C11D11/00 , C11D7/50 , C11D7/32 , C11D3/20 , G03F7/42 , C11D3/00 , H01L21/02
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/2003 , C11D3/2068 , C11D3/2072 , C11D3/2079 , C11D3/2082 , C11D3/2086 , C11D3/2093 , C11D7/3245 , C11D7/3281 , C11D7/5022 , G03F7/425 , G03F7/426 , H01L21/02063
Abstract: This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
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8.
公开(公告)号:US20170322495A1
公开(公告)日:2017-11-09
申请号:US15393586
申请日:2016-12-29
Inventor: Sang Woo LIM , Eun Seok OH
IPC: G03F7/42 , H01L21/027 , B08B3/08
CPC classification number: G03F7/426 , C11D7/5009 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , G03F7/425 , H01L21/31133
Abstract: Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.
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公开(公告)号:US20170293228A1
公开(公告)日:2017-10-12
申请号:US15096362
申请日:2016-04-12
Applicant: Dynaloy, LLC
Inventor: Richard Dalton Peters , Travis W. Acra , Kimberly Dona Pollard
IPC: G03F7/42
CPC classification number: G03F7/425
Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include a quaternary ammonium hydroxide an amine, and optionally a corrosion inhibitor and/or a sugar alcohol. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the substrate.
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公开(公告)号:US20170256396A1
公开(公告)日:2017-09-07
申请号:US15061364
申请日:2016-03-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ya-Ling Cheng , Ching-Yu Chang , Chien-Chih Chen , Chun-Kuang Chen , Siao-Shan Wang , Wei-Liang Lin
IPC: H01L21/027 , H01L21/311 , G03F7/32 , H01L21/02
CPC classification number: G03F7/327 , G03F7/0046 , G03F7/322 , G03F7/325 , G03F7/40 , G03F7/405 , G03F7/425 , H01L21/02118 , H01L21/02282 , H01L21/0273 , H01L21/3086
Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; andselectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.
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