公开(公告)号：US20170256396A1

公开(公告)日：2017-09-07

申请号：US15061364

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang ,  Chien-Chih Chen ,  Chun-Kuang Chen ,  Siao-Shan Wang ,  Wei-Liang Lin

IPC: H01L21/027 ,  H01L21/311 ,  G03F7/32 ,  H01L21/02

CPC classification number: G03F7/327 ,  G03F7/0046 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/3086

Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; andselectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.

公开(公告)号：US10114291B2

公开(公告)日：2018-10-30

申请号：US15061364

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang ,  Chien-Chih Chen ,  Chun-Kuang Chen ,  Siao-Shan Wang ,  Wei-Liang Lin

IPC: H01L21/31 ,  G03F7/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  G03F7/004 ,  G03F7/40 ,  G03F7/42

Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; and selectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.