知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

21 records (took 0.015 seconds)

    Grafting design for pattern post-treatment in semiconductor manufacturing
    1.
    发明授权
    Grafting design for pattern post-treatment in semiconductor manufacturing 有权

    公开(公告)号：US11387104B2

    公开(公告)日：2022-07-12

    申请号：US16889506

    申请日：2020-06-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/033 ,  H01L21/027 ,  G03F7/40

    Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.

    Post development treatment method and material for shrinking critical dimension of photoresist layer
    2.
    发明授权
    Post development treatment method and material for shrinking critical dimension of photoresist layer 有权

    公开(公告)号：US10915027B2

    公开(公告)日：2021-02-09

    申请号：US16048455

    申请日：2018-07-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Ching-Yu Chang

    IPC: G03F7/40 ,  G03F7/30 ,  G03F7/00

    Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.

    Material composition and methods thereof
    3.
    发明授权
    Material composition and methods thereof 有权

    公开(公告)号：US10517179B2

    公开(公告)日：2019-12-24

    申请号：US15621646

    申请日：2017-06-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/027 ,  H05K3/06 ,  G03F7/09 ,  G03F7/00 ,  G03F7/20 ,  G03F7/40

    Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.

    Grafting Design for Pattern Post-Treatment in Semiconductor Manufacturing
    5.
    发明申请
    Grafting Design for Pattern Post-Treatment in Semiconductor Manufacturing 审中-公开

    公开(公告)号：US20200294801A1

    公开(公告)日：2020-09-17

    申请号：US16889506

    申请日：2020-06-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/033 ,  H01L21/027 ,  G03F7/40

    Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.

    Method composition and methods thereof
    9.
    发明授权
    Method composition and methods thereof 有权

    公开(公告)号：US12211698B2

    公开(公告)日：2025-01-28

    申请号：US16889448

    申请日：2020-06-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/308 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

    Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

    Grafting design for pattern post-treatment in semiconductor manufacturing
    10.
    发明授权
    Grafting design for pattern post-treatment in semiconductor manufacturing 审中-公开

    公开(公告)号：US10672610B2

    公开(公告)日：2020-06-02

    申请号：US15600037

    申请日：2017-05-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/033 ,  H01L21/027 ,  G03F7/40

    Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The linking unit comprises an alkyl segment. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer.

Patent Agency Ranking