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1.发明申请REMOVAL COMPOSITION FOR SELECTIVELY REMOVING HARD MASK AND METHODS THEREOF 审中-公开用于选择性地去除硬掩模的去除组合物及其方法公开(公告)号：US20160312162A1
公开(公告)日：2016-10-27
申请号：US15028501
申请日：2014-10-09
发明人： Hua Cui
IPC分类号： C11D11/00 , H01L21/311 , H01L21/3213 , C11D7/04 , C23F1/38 , C11D7/32 , C23F1/18 , C23F1/26 , C23F1/34 , H01L21/02 , C11D7/26
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , C11D3/2082 , C11D3/3942 , C11D3/3947 , C11D7/04 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76807 , H01L21/76814
摘要： The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
摘要翻译： 本发明涉及一种去除组合物，用于从半导体衬底相对于低k电介质材料选择性地去除基本上由TiN，TaN，TiN x O y，TiW，W，Ti以及Ti和W的合金组成的硬掩模。 半导体衬底包括具有TiN，TaN，TiN x O y，TiW，W，Ti或其上的Ti或W硬掩模的合金的低k电介质材料。 去除组合物包含0.1重量％至90重量％的氧化剂; 0.0001重量％至50重量％的羧酸酯; 并且其余至多100重量％的去除组合物包含去离子水。
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2.发明申请公开(公告)号：US20160254182A1
公开(公告)日：2016-09-01
申请号：US15028573
申请日：2014-10-09
发明人： Hua Cui
IPC分类号： H01L21/768 , B08B3/08 , B08B3/10 , C23F1/40 , C11D3/39 , C11D11/00 , C23F1/26 , H01L21/02 , C11D3/20
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , C11D3/2082 , C11D3/3942 , C11D3/3947 , C11D7/04 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76807 , H01L21/76814
摘要： The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
摘要翻译： 本公开涉及一种从半导体衬底去除基本上由TiN，TaN，TiN x O y，TiW，W，Ti以及Ti和W的合金组成的硬掩模的方法。 该方法包括使半导体衬底与去除组合物接触。 去除组合物包含0.1重量％至90重量％的氧化剂; 0.0001重量％至50重量％的羧酸酯; 并且其余至多100重量％的去除组合物包含去离子水。
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公开(公告)号：US10005991B2
公开(公告)日：2018-06-26
申请号：US15028573
申请日：2014-10-09
发明人： Hua Cui
IPC分类号： C11D7/32 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/3213 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , C11D3/39 , C11D7/26 , B08B3/08 , C11D7/04 , B08B3/10 , C11D3/20 , H01L21/768 , H01L21/311
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , C11D3/2082 , C11D3/3942 , C11D3/3947 , C11D7/04 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76807 , H01L21/76814
摘要： The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
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公开(公告)号：US20160240368A1
公开(公告)日：2016-08-18
申请号：US15028491
申请日：2014-11-14
申请人： EKC TECHNOLOGY, INC.
发明人： Hua Cui
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , C11D3/2082 , C11D3/3942 , C11D3/3947 , C11D7/04 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76807 , H01L21/76814
摘要： An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon wherein the removal composition comprises at least one oxidizing agent and a carboxylate compound.
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5.发明申请METHOD AND COMPOSITION FOR REMOVING RESIST, ETCH RESIDUE, AND COPPER OXIDE FROM SUBSTRATES HAVING COPPER, METAL HARDMASK AND LOW-K DIELECTRIC MATERIAL 有权用于从具有铜，金属HARDMASK和低K电介质材料的基板上去除电阻，蚀刻残留和氧化铜的方法和组合物公开(公告)号：US20130157472A1
公开(公告)日：2013-06-20
申请号：US13765480
申请日：2013-02-12
申请人： EKC Technology, Inc.
发明人： Hua Cui
CPC分类号： H01L21/0206 , C09K13/00 , C11D3/0073 , C11D3/3947 , C11D3/3956 , C11D7/3281 , C11D11/0047 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134
摘要： A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
摘要翻译： 一种用于从包含铜，低k电介质材料和TiN，TiN x O y或W的衬底去除光致抗蚀剂，聚合物材料，蚀刻残余物和氧化铜的半导体处理组合物和方法，其中组合物包含水，至少一种选自Cl- 或Br-，并且其中金属硬掩模仅包含TiN或TiN x O y，任选地至少一种氢氧化物源。
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6.发明申请METHOD AND COMPOSITION FOR SELECTIVELY REMOVING METAL HARDMASK AND OTHER RESIDUES FROM SEMICONDUCTOR DEVICE SUBSTRATES COMPRISING LOW-K DIELECTRIC MATERIAL AND COPPER 审中-公开从包含低K介电材料和铜的半导体器件衬底中选择性地去除金属硬质合金和其他残留物的方法和组合物公开(公告)号：US20150104952A1
公开(公告)日：2015-04-16
申请号：US14103303
申请日：2013-12-11
申请人： EKC Technology, Inc.
发明人： Hua Cui
IPC分类号： G03F7/42 , H01L21/033
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , C11D3/2082 , C11D3/3942 , C11D3/3947 , C11D7/04 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76807 , H01L21/76814
摘要： An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon wherein the removal composition comprises at least one oxidizing agent and a carboxylate compound.
摘要翻译： pH为2〜14的水性去除组合物，以及相对于低k材料从基本上由TiN，TaN，TiNxOy，TiW，W或Ti或W的合金选择性地除去的蚀刻掩模的方法 包括具有TiN，TaN，TiN x O y，TiW，W或其上的Ti或W蚀刻掩模的合金的所述低k材料的半导体衬底，其中所述去除组合物包含至少一种氧化剂和羧酸盐化合物。
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公开(公告)号：US10155921B2
公开(公告)日：2018-12-18
申请号：US15028501
申请日：2014-10-09
申请人： EKC TECHNOLOGY INC
发明人： Hua Cui
IPC分类号： C09K13/06 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/3213 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , C11D3/39 , C11D7/26 , C11D7/32 , B08B3/08 , C11D7/04 , B08B3/10 , C11D3/20 , H01L21/768 , H01L21/311
摘要： The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
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8.发明授权Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material 有权从具有铜，金属硬掩模和低k电介质材料的衬底去除抗蚀剂，蚀刻残余物和氧化铜的方法和组合物公开(公告)号：US09257270B2
公开(公告)日：2016-02-09
申请号：US13765480
申请日：2013-02-12
申请人： EKC Technology, Inc.
发明人： Hua Cui
CPC分类号： H01L21/0206 , C09K13/00 , C11D3/0073 , C11D3/3947 , C11D3/3956 , C11D7/3281 , C11D11/0047 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134
摘要： A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
摘要翻译： 一种用于从包含铜，低k电介质材料和TiN，TiN x O y或W的衬底去除光致抗蚀剂，聚合物材料，蚀刻残余物和氧化铜的半导体处理组合物和方法，其中组合物包含水，至少一种选自Cl- 或Br-，并且其中金属硬掩模仅包含TiN或TiNxOy，任选地至少一种氢氧化物源。
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