公开(公告)号：US12051621B2

公开(公告)日：2024-07-30

申请号：US17825405

申请日：2022-05-26

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi

IPC分类号： H01L21/768 ,  B24B37/04 ,  B81B7/00 ,  B81C1/00 ,  C23F3/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/00 ,  C23F1/18 ,  H01L23/522 ,  H01L25/065

CPC分类号： H01L21/76868 ,  B24B37/042 ,  B81B7/0006 ,  B81C1/00095 ,  C23F3/00 ,  H01L21/30625 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76883 ,  H01L24/80 ,  H01L24/81 ,  C23F1/18 ,  H01L21/76898 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/80031 ,  H01L2224/80895 ,  H01L2225/06506 ,  H01L2225/06524 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/1433 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014

摘要： Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

公开(公告)号：US20230189447A1

公开(公告)日：2023-06-15

申请号：US18164798

申请日：2023-02-06

申请人： Kateeva, Inc.

发明人： Moshe FRENKEL ,  Nava SHPAISMAN

IPC分类号： H05K3/06 ,  C23F1/02 ,  C09D11/54 ,  C23F1/18

CPC分类号： H05K3/062 ,  C23F1/02 ,  H05K3/061 ,  C09D11/54 ,  C23F1/18 ,  G03F7/0002

摘要： Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

公开(公告)号：US11674229B2

公开(公告)日：2023-06-13

申请号：US16954218

申请日：2020-05-07

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Haoxu Wu

IPC分类号： C23F1/18 ,  C08K5/17 ,  C08L1/28 ,  C08L25/06 ,  C08B11/12 ,  C23F1/34

CPC分类号： C23F1/18 ,  C08B11/12 ,  C08K5/17 ,  C08L1/286 ,  C08L25/06 ,  C23F1/34 ,  C08L2312/00

摘要： The invention discloses an etching chelating agent, a manufacturing method thereof, and an etching solution composition. The etching chelating agent includes cellulose cross-linked polymer, and the cellulose cross-linked polymer is obtained by cross-linking and polymerizing carboxymethyl cellulose and an amine compound.

公开(公告)号：US20220411696A1

公开(公告)日：2022-12-29

申请号：US17896073

申请日：2022-08-26

申请人： Samsung Display Co., Ltd.

发明人： Bong-Kyun Kim ,  JinSeuk Kim ,  SeungBo Shim ,  ShinHyuk Choi ,  Seung-Hee Kim ,  Donghee Lee

IPC分类号： C09K13/08 ,  H01L29/45 ,  H01L21/3213 ,  H01L27/12 ,  C23F1/10 ,  C23F1/16 ,  C09K13/00 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  G03F7/20 ,  H01L21/306 ,  H01L21/311 ,  C09K13/06

摘要： A method for manufacturing a metal pattern, the method including forming a photosensitive layer pattern on a multilayer metal substrate including titanium and copper; providing an etchant composition on the multilayer metal substrate on which the photosensitive layer pattern is formed to form the source electrode and the drain electrode; and removing the photosensitive layer pattern, wherein the etchant composition includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound, and water, and a weight ratio of the four-nitrogen ring compound and the two-chlorine compound is from about 1:0.5 to about 1:4.

公开(公告)号：US11530487B2

公开(公告)日：2022-12-20

申请号：US17360813

申请日：2021-06-28

申请人： REPUBLIC OF KOREA (NATIONAL FORENSIC SERVICE DIRECTOR MINISTRY OF THE INTERIOR AND SAFETY

发明人： Nam Kyu Park ,  Byung Seon Moon ,  Jae Mo Goh ,  Jin Pyo Kim ,  Young Il Seo ,  Eun Ah Joo ,  Je Hyun Lee ,  Sang Yoon Lee ,  Jae Hyeok Yi

IPC分类号： C23F1/18 ,  G03F7/00 ,  B41M1/36

摘要： A method of generating artificial latent fingerprints for latent fingerprint development experiments includes: printing an artificially created fingerprint shape on paper for application to a target surface; thermally transferring the fingerprint shape printed on the paper to an etching plate by applying a certain range of heat and pressure to the paper on which the fingerprint shape is printed; forming a three-dimensional fingerprint shape on the etching plate by performing an etching process according to the fingerprint shape transferred to the etching plate; patterning the three-dimensional fingerprint shape formed on the etching plate with a molding member; and forming a latent fingerprint on the target surface using an artificial fingerprint solution from the three-dimensional fingerprint shape formed by patterning with the molding member.

公开(公告)号：US20220389592A1

公开(公告)日：2022-12-08

申请号：US17727003

申请日：2022-04-22

申请人： C. Uyemura & Co., Ltd.

发明人： Takuya Komeda ,  Tetsuji Ishida ,  Hisamitsu Yamamoto ,  Kazunari Kato ,  Ryoyu Shimizu

IPC分类号： C23F1/18

摘要： A copper etching solution contains an oxidizing agent and an amine compound. The oxidizing agent is one or more selected from the group consisting of a perchlorate, a chlorate, a chlorite, a hypochlorite, hydrogen peroxide, and a perborate, and the amine compound has one or more primary amino groups or secondary amino groups.

公开(公告)号：US20220205110A1

公开(公告)日：2022-06-30

申请号：US17566427

申请日：2021-12-30

申请人： Samsung Display Co., Ltd.

发明人： BONG-KYUN KIM ,  CHANGWOO KWON ,  SEUNGBO SHIM ,  ILBAE AHN ,  SEOKJUN JANG ,  JINSUEK KIM ,  JI-HUN PARK ,  YONG-SU LEE ,  YANGIL JEON ,  GYU-PO KIM ,  SANG-WOO KIM ,  HYUN-CHEOL SHIN

IPC分类号： C23F1/26 ,  C23F1/18 ,  H01L21/027

摘要： An etchant composition of an embodiment may etch a multi-layered film of titanium/copper and may include about 5 wt % to about 20 wt % of persulfate, about 0.1 wt % to about 5 wt % of phosphoric acid or phosphate, about 0.01 wt % to about 2 wt % of a carbonyl ring compound, about 0.01 wt % to about 1 wt % of a 3-nitrogen ring compound, about 0.1 wt % to about 2 wt % of a 4-nitrogen ring compound, about 0.1 wt % to about 0.9 wt % of a fluorine compound, about 0.1 wt % to about 0.5 wt % of hydrogen about 1 wt % to about 3 wt % of a zwitterionic compound, and sulfate, water which is included in an amount that makes the total weight of the entire composition about 100 wt %.

公开(公告)号：US20220074024A1

公开(公告)日：2022-03-10

申请号：US17417714

申请日：2019-12-19

申请人： ROYAL MELBOURNE INSTITUTE OF TECHNOLOGY

发明人： Jackson Leigh SMITH ,  Ma QIAN ,  Tingting SONG ,  Daniel LIANG

IPC分类号： C22C3/00 ,  C23F1/18 ,  C23F1/30 ,  C25F3/02 ,  C22C9/05

摘要： A method for producing a metal structure comprising a porous inter-dendritic matrix defining a network of dendritic channels, the method comprising the steps of: preparing an alloy melt comprising a metal element and at least one alloying element, cooling the alloy melt to a solid alloy, wherein the cooling promotes formation of a network of dendrites rich in the at least one alloying element within an inter-dendritic matrix rich in the metal, dealloying the solid alloy to remove alloying element from the dendrites and the inter-dendritic matrix to obtain the metal structure.

公开(公告)号：US20220002156A1

公开(公告)日：2022-01-06

申请号：US17478931

申请日：2021-09-19

申请人： ZHEJIANG UNIVERSITY

发明人： Mingsheng Xu ,  Han Xiao

IPC分类号： C01B32/182 ,  B05D1/00 ,  B05D3/10 ,  H01L31/18 ,  C23F1/18 ,  C23F1/30

摘要： A method for transferring a graphene film is provided. The method includes spin-coating a cera alba containing solution onto a surface of the graphene film on a metal substrate to form a cera alba layer as a supporting layer, so as to obtain a first stack having the cera alba layer, the graphene film and the metal substrate in sequence; removing the metal substrate with an etching solution to obtain a second stack having the cera alba layer and the graphene film, transferring the second stack onto a target substrate to obtain a third stack having the second stack and the target substrate, and drying the third stack; removing the cera alba layer with an organic solvent. By using natural non-toxic harmless cera alba as a supporting material, it is possible to obtain the graphene film with a clean and intact surface and low sheet resistance.

公开(公告)号：US20210404068A1

公开(公告)日：2021-12-30

申请号：US16652286

申请日：2020-03-17

申请人： TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Haoxu WU ,  Yuehong ZHANG

IPC分类号： C23F1/26 ,  C23F1/18 ,  C23F1/02

摘要： An etching solution, an annexing agent, and a manufacturing method of a metal wiring are disclosed. A main ingredient of the etching solution includes hydrogen peroxide accounting for 5% to 30% of a total weight of the etching solution, a hydrogen peroxide stabilizer accounting for 0.1% to 5% of the total weight of the etching solution, a chelant accounting for 5% to 25% of the total weight of the etching solution, a surface active agent accounting for 0.1% to 1% of the total weight of the etching solution, an inorganic acid oxidant accounting for 0.1% to 5% of the total weight of the etching solution, and a remainder of the etching solution is deionized water. The annexing agent is added to the etching solution when the etching solution is used repeatedly.