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公开(公告)号:US20240254391A1
公开(公告)日:2024-08-01
申请号:US18430567
申请日:2024-02-01
申请人: ENTEGRIS, INC.
摘要: Wet etch compositions and related methods are provided herein. A wet etch composition for molybdenum, may include phosphoric acid, acetic acid, nitric acid, and an additive for reducing an oxidation rate of a MoOx layer. The additive may be present in an amount of 0.01% to 5% by weight based on a total weight of the wet etch composition.
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公开(公告)号:US11932947B2
公开(公告)日:2024-03-19
申请号:US17005884
申请日:2020-08-28
申请人: TECH MET, INC.
CPC分类号: C23F1/26 , A61F2/30767 , A61L31/022 , A61F2002/30925 , A61F2310/00029 , B82Y5/00 , B82Y30/00 , B82Y40/00
摘要: Compositions and methods for etching an implantable device having a cobalt chrome surface are disclosed. The compositions generally include at least two mineral acids, iron (Fe), and certain component metals of the cobalt chrome to be etched. For example, when etching a cobalt chromium molybdenum alloy, the metals may include chromium (Cr), molybdenum (Mo), and optionally, cobalt (Co). The at least two mineral acids may include hydrochloric acid (HCl), nitric acid (HNO3), and hydrofluoric acid (HF). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with improved osseointegration, biocompatibility, and healing after surgery.
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公开(公告)号:US11875991B2
公开(公告)日:2024-01-16
申请号:US16973554
申请日:2019-06-04
发明人: Koji Kagawa
IPC分类号: H01L21/02 , B08B3/08 , C23F1/26 , H01L21/67 , H01L21/687
CPC分类号: H01L21/02057 , B08B3/08 , C23F1/26 , H01L21/67051 , H01L21/68764
摘要: A substrate treatment method according to an embodiment of the present disclosure includes a temperature raising step of raising a temperature of a concentrated sulfuric acid, and a liquid supply step of supplying the concentrated sulfuric acid having the raised temperature to a substrate placed on a substrate processing part.
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公开(公告)号:US20240010915A1
公开(公告)日:2024-01-11
申请号:US17905340
申请日:2021-03-02
发明人: CHAO-HSIANG CHEN , JHIH KUEI GE , YI-CHIA LEE , WEN DAR LIU
IPC分类号: C09K13/08 , C23F1/26 , H01L21/311 , H01L21/3213
CPC分类号: C09K13/08 , C23F1/26 , H01L21/31111 , H01L21/32134
摘要: Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.
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公开(公告)号:US20230279294A1
公开(公告)日:2023-09-07
申请号:US18177304
申请日:2023-03-02
申请人: FUJIFILM Corporation
发明人: Moe Narita , Nobuaki Sugimura
IPC分类号: C09K13/06 , C23F1/26 , C23F1/28 , H01L21/3213
CPC分类号: C09K13/06 , C23F1/26 , C23F1/28 , H01L21/32134
摘要: Objects of the present invention are to provide a composition having excellent dissolving ability for a transition metal-containing substance (particularly, a Ru-containing substance) and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one iodic acid compound selected from the group consisting of periodic acid, iodic acid, and salts thereof, and a compound represented by Formula (1).
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公开(公告)号:US11718906B2
公开(公告)日:2023-08-08
申请号:US17188571
申请日:2021-03-01
发明人: Conghua Wang , Yong Tao , Lin Zhang , Gerald A. Gontarz
IPC分类号: C23C14/32 , C23C4/02 , C23C4/08 , C23C8/10 , C23C14/16 , C23C28/00 , C23F1/26 , C25B15/00 , H01G9/055 , H01G11/70 , H01M8/0206 , H01M8/0208 , H01M8/0228 , C21D6/00 , C21D9/00 , C22C14/00 , C22F1/18 , C23C4/12 , C23C14/02 , C23C14/35 , C23F1/28 , C23F17/00 , H01M8/021 , H01M8/1018 , H01M4/66 , H01M8/10
CPC分类号: C23C14/325 , C21D6/002 , C21D9/0068 , C22C14/00 , C22F1/183 , C23C4/02 , C23C4/08 , C23C4/12 , C23C8/10 , C23C14/02 , C23C14/021 , C23C14/16 , C23C14/165 , C23C14/35 , C23C28/321 , C23C28/345 , C23F1/26 , C23F1/28 , C23F17/00 , C25B15/00 , H01G9/055 , H01G11/70 , H01M8/021 , H01M8/0206 , H01M8/0208 , H01M8/0228 , H01M8/1018 , H01M4/661 , H01M4/662 , H01M4/667 , H01M2008/1095 , Y02E60/13
摘要: Method for forming a metallic component surface to achieve lower electrical contact resistance. The method comprises modifying a surface chemical composition and creating a micro-textured surface structure of the metallic component that includes small peaks and/or pits. The small peaks and pits have a round or irregular cross-sectional shape with a diameter between 10 nm and 10 microns, a height/depth between 10 nm and 10 microns, and a distribution density between 0.4 million/cm2 and 5 billion cm2.
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公开(公告)号:US11655545B2
公开(公告)日:2023-05-23
申请号:US17264482
申请日:2019-07-31
CPC分类号: C23F3/06 , C23F1/26 , C23F1/28 , F01D25/00 , F05D2230/10
摘要: The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.
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公开(公告)号:US20210317585A1
公开(公告)日:2021-10-14
申请号:US17264482
申请日:2019-07-31
摘要: The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.
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公开(公告)号:US20210254208A1
公开(公告)日:2021-08-19
申请号:US17188571
申请日:2021-03-01
发明人: Conghua WANG , Yong TAO , Lin ZHANG , Gerald A. GONTARZ
IPC分类号: C23C14/32 , C23C4/02 , C23C4/08 , C23C8/10 , C23C14/16 , C23C28/00 , C23F1/26 , C25B15/00 , H01G9/055 , H01G11/70 , H01M8/0206 , H01M8/0208 , H01M8/0228 , C21D6/00 , C21D9/00 , C22C14/00 , C22F1/18 , C23C4/12 , C23C14/02 , C23C14/35 , C23F1/28 , C23F17/00 , H01M8/021 , H01M8/1018
摘要: Method for forming a metallic component surface to achieve lower electrical contact resistance. The method comprises modifying a surface chemical composition and creating a micro-textured surface structure of the metallic component that includes small peaks and/or pits. The small peaks and pits have a round or irregular cross-sectional shape with a diameter between 10 nm and 10 microns, a height/depth between 10 nm and 10 microns, and a distribution density between 0.4 million/cm2 and 5 billion cm2.
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公开(公告)号:US10934615B2
公开(公告)日:2021-03-02
申请号:US16594349
申请日:2019-10-07
发明人: Conghua Wang , Yong Tao , Lin Zhang , Gerald A. Gontarz
IPC分类号: C23C14/02 , C23C14/32 , C23C4/02 , C23C4/08 , C23C8/10 , C23C14/16 , C23C28/00 , C23F1/26 , C25B15/00 , H01G9/055 , H01G11/70 , H01M8/0206 , H01M8/0208 , H01M8/0228 , C21D6/00 , C21D9/00 , C22C14/00 , C22F1/18 , C23C4/12 , C23C14/35 , C23F1/28 , C23F17/00 , H01M8/021 , H01M8/1018 , H01M4/66
摘要: Method for forming a metallic component surface to achieve lower electrical contact resistance. The method comprises modifying a surface chemical composition and creating a micro-textured surface structure of the metallic component that includes small peaks and/or pits. The small peaks and pits have a round or irregular cross-sectional shape with a diameter between 10 nm and 10 microns, a height/depth between 10 nm and 10 microns, and a distribution density between 0.4 million/cm2 and 5 billion cm2.
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