公开(公告)号：US20240254391A1

公开(公告)日：2024-08-01

申请号：US18430567

申请日：2024-02-01

申请人： ENTEGRIS, INC.

发明人： Hunter Patrick Hickox ,  Atanu K. Das ,  Chia-Jung Hsu ,  Steven A. Lippy

IPC分类号： C09K13/06 ,  C23F1/26

CPC分类号： C09K13/06 ,  C23F1/26

摘要： Wet etch compositions and related methods are provided herein. A wet etch composition for molybdenum, may include phosphoric acid, acetic acid, nitric acid, and an additive for reducing an oxidation rate of a MoOx layer. The additive may be present in an amount of 0.01% to 5% by weight based on a total weight of the wet etch composition.

公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

申请人： ENTEGRIS, INC.

发明人： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC分类号： C23F1/38 ,  H01L21/3213

摘要： An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11492709B2

公开(公告)日：2022-11-08

申请号：US17230633

申请日：2021-04-14

申请人： ENTEGRIS, INC.

发明人： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC分类号： C23F1/38 ,  H01L21/3213

摘要： An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.