公开(公告)号：US20160027920A1

公开(公告)日：2016-01-28

申请号：US14717734

申请日：2015-05-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BONG-KYUN KIM ,  SEUNG-HO YOON ,  SHIN-IL CHOI

IPC: H01L29/786 ,  H01L29/45 ,  H01L27/12 ,  H01L21/441 ,  H01L29/24 ,  H01L29/66 ,  H01L21/4763 ,  H01L29/417 ,  H01L23/532

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract translation: 薄膜晶体管基板包括设置在基板上的栅电极; 半导体层，其设置在与所述栅电极部分重叠并且包括氧化物半导体材料的所述基板上; 以及设置在半导体层上的源电极和漏电极，其中漏电极与源电极间隔开。 源电极和漏极各自包括阻挡层和主布线层，主布线层设置在阻挡层上，阻挡层包括设置在半导体层上的第一金属层和第二金属层 设置在第一金属层上。

公开(公告)号：US20150214072A1

公开(公告)日：2015-07-30

申请号：US14679787

申请日：2015-04-06

Applicant: SAMSUNG DISPLAY CO., LTD. ,  DONGJIN SEMICHEM CO., LTD.

Inventor： BONG-KYUN KIM ,  Hong Sick Park ,  Wang Woo Lee ,  Young Min Moon ,  Seung Ho Yoon ,  Young Joo Choi ,  Sang-Woo Kim ,  Ki-Beom Lee ,  Dae-Woo Lee ,  Sam-Young Cho

IPC: H01L21/465 ,  C09K13/06 ,  C09K13/00 ,  C23F1/30

CPC classification number: H01L21/465 ,  C09K13/00 ,  C09K13/06 ,  C23F1/30 ,  H01L21/32134 ,  H01L29/66969 ,  H01L29/7869

Abstract: An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

Abstract translation: 蚀刻剂组合物包括过硫酸铵（（（NH4）2）S2O8），唑类化合物，水溶性胺化合物，含磺酸化合物，含硝酸盐化合物，含磷酸盐化合物，氯化物 含有化合物和残留水。

公开(公告)号：US20220205110A1

公开(公告)日：2022-06-30

申请号：US17566427

申请日：2021-12-30

Applicant: Samsung Display Co., Ltd.

Inventor： BONG-KYUN KIM ,  CHANGWOO KWON ,  SEUNGBO SHIM ,  ILBAE AHN ,  SEOKJUN JANG ,  JINSUEK KIM ,  JI-HUN PARK ,  YONG-SU LEE ,  YANGIL JEON ,  GYU-PO KIM ,  SANG-WOO KIM ,  HYUN-CHEOL SHIN

IPC: C23F1/26 ,  C23F1/18 ,  H01L21/027

Abstract: An etchant composition of an embodiment may etch a multi-layered film of titanium/copper and may include about 5 wt % to about 20 wt % of persulfate, about 0.1 wt % to about 5 wt % of phosphoric acid or phosphate, about 0.01 wt % to about 2 wt % of a carbonyl ring compound, about 0.01 wt % to about 1 wt % of a 3-nitrogen ring compound, about 0.1 wt % to about 2 wt % of a 4-nitrogen ring compound, about 0.1 wt % to about 0.9 wt % of a fluorine compound, about 0.1 wt % to about 0.5 wt % of hydrogen about 1 wt % to about 3 wt % of a zwitterionic compound, and sulfate, water which is included in an amount that makes the total weight of the entire composition about 100 wt %.

公开(公告)号：US20170069761A1

公开(公告)日：2017-03-09

申请号：US15357273

申请日：2016-11-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BONG-KYUN KIM ,  SEUNG-HO YOON ,  SHIN-IL CHOI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L29/45 ,  H01L21/441 ,  H01L23/532 ,  H01L27/12 ,  H01L21/4763

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

公开(公告)号：US20170047434A1

公开(公告)日：2017-02-16

申请号：US15335897

申请日：2016-10-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BONG-KYUN KIM ,  SEUNG-HO YOON ,  SHIN-IL CHOI

IPC: H01L29/66 ,  H01L21/4763 ,  H01L29/417 ,  H01L21/465 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract translation: 薄膜晶体管基板包括设置在基板上的栅电极; 半导体层，其设置在与所述栅电极部分重叠并且包括氧化物半导体材料的所述基板上; 以及设置在半导体层上的源电极和漏电极，其中漏电极与源电极间隔开。 源电极和漏极各自包括阻挡层和主布线层，主布线层设置在阻挡层上，阻挡层包括设置在半导体层上的第一金属层和第二金属层 设置在第一金属层上。