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公开(公告)号：US20210247696A1
公开(公告)日：2021-08-12
申请号：US16764887
申请日：2020-03-24
发明人： Yuehong ZHANG
IPC分类号： G03F7/42
摘要： The present disclosure provides a photoresist stripping device and a photoresist stripping method. The photoresist stripping device including a conveyor belt, a liquid storage tank, a filtering device, a lighting device and a stripping tank. Through disposing a metal-organic framework (MOF) material in a filter element, the MOF material is configured to adsorb a dissolved oxygen of the stripping solution in a visible light environment, thereby reducing the difference in oxygen concentration between the inside and outside of the gap, and alleviating hollowing out phenomenon of copper caused by stripping the photoresist of the substrate. Further, when reaching a saturation step, can heat or emit ultraviolet light to release the dissolved oxygen to make the filter material recyclable.
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公开(公告)号：US20210404068A1
公开(公告)日：2021-12-30
申请号：US16652286
申请日：2020-03-17
发明人： Haoxu WU , Yuehong ZHANG
摘要： An etching solution, an annexing agent, and a manufacturing method of a metal wiring are disclosed. A main ingredient of the etching solution includes hydrogen peroxide accounting for 5% to 30% of a total weight of the etching solution, a hydrogen peroxide stabilizer accounting for 0.1% to 5% of the total weight of the etching solution, a chelant accounting for 5% to 25% of the total weight of the etching solution, a surface active agent accounting for 0.1% to 1% of the total weight of the etching solution, an inorganic acid oxidant accounting for 0.1% to 5% of the total weight of the etching solution, and a remainder of the etching solution is deionized water. The annexing agent is added to the etching solution when the etching solution is used repeatedly.
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公开(公告)号：US20220349064A1
公开(公告)日：2022-11-03
申请号：US17600169
申请日：2020-12-29
发明人： Yuehong ZHANG , Yifeng HE
摘要： The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.
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