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公开(公告)号：US11733609B2
公开(公告)日：2023-08-22
申请号：US17370541
申请日：2021-07-08
发明人： Charlotte A. Cutler , Li Cui , Shintaro Yamada , Paul J. LaBeaume , Suzanne M. Coley , James F. Cameron , Daniel Greene
IPC分类号： G03F7/075 , G03F7/11 , G03F7/16 , G03F7/32 , G03F7/20 , G03F7/42 , C08F230/08 , C09D143/04 , C08F220/18
CPC分类号： G03F7/0752 , C08F230/08 , C08F230/085 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/322 , G03F7/423 , C08F220/1804 , C08F2800/10 , C09D143/04 , C08F220/1804 , C08F230/085
摘要： Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.
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公开(公告)号：US20220197141A1
公开(公告)日：2022-06-23
申请号：US17124743
申请日：2020-12-17
IPC分类号： G03F7/11 , C08F12/08 , C08F12/22 , C09D125/14 , C09D125/18 , C23C16/02 , C23C16/20 , C23C16/455 , G03F7/16 , H01L21/027
摘要： A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, the photoresist underlayer formed from a composition including a polymer having a glass transition temperature of less than 110° C. and a solvent; subjecting the photoresist underlayer to a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.
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公开(公告)号：US10818493B2
公开(公告)日：2020-10-27
申请号：US16218519
申请日：2018-12-13
发明人： Suzanne M. Coley , Paul J. LaBeaume , Shintaro Yamada , Cecilia W. Kiarie , Li Cui , Bhooshan Popere
IPC分类号： H01L21/027 , C08G77/04 , G03F7/09 , C09D7/20 , C08G77/50 , C09D183/14 , G03F7/075 , C09D5/00 , C08G77/00
摘要： Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from the these compositions can be easily removed during processing without the need for a separate removal step.
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公开(公告)号：US20180366319A1
公开(公告)日：2018-12-20
申请号：US15622220
申请日：2017-06-14
发明人： Suzanne M. Coley , Paul J. LaBeaume , Shintaro Yamada , Cecilia W. Kiarie , Li Cui , Bhooshan Popere
IPC分类号： H01L21/027 , C08G77/04 , C09D7/00 , C09D183/04 , C09D5/00 , G03F7/039 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/09 , G03F7/32
CPC分类号： H01L21/0276 , C08G77/04 , C08G77/80 , C09D5/006 , C09D7/20 , C09D183/04 , G03F7/038 , G03F7/039 , G03F7/091 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/322 , G03F7/325
摘要： Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from these compositions can be easily removed during processing without the need for a separate removal step.
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公开(公告)号：US20180253006A1
公开(公告)日：2018-09-06
申请号：US15971103
申请日：2018-05-04
发明人： Li Cui , Charlotte A. Cutler , Suzanne M. Coley , Owendi Ongayi , Christopher P. Sullivan , Paul J. LaBeaume , Shintaro Yamada , Mingqi Li , James F. Cameron
IPC分类号： G03F7/11 , G03F7/20 , C08F24/00 , C08F20/06 , C08F16/10 , C08F20/30 , C08F20/14 , C08G63/08 , C09D183/04 , C09D5/20 , C08G77/04 , G03F7/42 , G03F7/16 , G03F7/30
CPC分类号： G03F7/11 , C08F16/10 , C08F20/06 , C08F20/10 , C08F20/14 , C08F20/30 , C08F24/00 , C08F220/14 , C08F220/20 , C08F220/34 , C08F222/06 , C08F222/40 , C08F230/08 , C08F2220/1825 , C08F2220/1858 , C08F2220/1891 , C08F2220/282 , C08F2220/283 , C08F2220/325 , C08F2800/10 , C08G63/08 , C08G77/04 , C08G77/20 , C08G77/80 , C09D5/20 , C09D183/04 , G03F7/0752 , G03F7/161 , G03F7/20 , G03F7/30 , G03F7/422 , G03F7/423 , C08K5/19 , C08L33/14
摘要： Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.
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公开(公告)号：US20160103392A1
公开(公告)日：2016-04-14
申请号：US14833284
申请日：2015-08-24
发明人： Paul J. LaBeaume , Vipul Jain , Suzanne M. Coley , James W. Thackeray , James F. Cameron , Amy M. Kwok , David A. Valeri
CPC分类号： G03F7/038 , C07C309/12 , C07C381/12 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/38 , G03F7/0045 , G03F7/0395 , G03F7/0397 , G03F7/16 , G03F7/20 , G03F7/32 , H01L21/0274
摘要： A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.
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7.发明申请POLYMER COMPRISING REPEAT UNITS WITH PHOTOACID-GENERATING FUNCTIONALITY AND BASE-SOLUBILITY-ENHANCING FUNCTIONALITY, AND ASSOCIATED PHOTORESIST COMPOSITION AND ELECTRONIC DEVICE FORMING METHOD 有权聚合物包含具有光生产功能和碱溶性增强功能的重复单元，以及相关的光电组合物和电子设备形成方法公开(公告)号：US20160102158A1
公开(公告)日：2016-04-14
申请号：US14833273
申请日：2015-08-24
发明人： Paul J. LaBeaume , Vipul Jain , James W. Thackeray , James F. Cameron , Suzanne M. Coley , Amy M. Kwok , David A. Valeri
CPC分类号： G03F7/0045 , C08F228/02 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer includes repeat units, most of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. Each of the photoacid-generating repeat units comprises an anion and a photoacid-generating cation that collectively have structure (I) wherein q, r, R1, m, X, and Z− are defined herein. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.
摘要翻译： 聚合物包括重复单元，其中大多数是产生光致酸的重复单元。 每个产生光酸的重复单元包括光产酸功能和碱溶性增强功能。 每个产生光致酸的重复单元包括阴离子和产生光酸的阳离子，其共同具有结构（I），其中q，r，R1，m，X和Z-在本文中定义。 该聚合物可用作光致抗蚀剂组合物的组分，该组合物还包括在酸作用下在碱性显影剂中表现出溶解度变化的第二聚合物。
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8.发明申请POLYMER COMPRISING REPEAT UNITS WITH PHOTOACID-GENERATING FUNCTIONALITY AND BASE-SOLUBILITY-ENHANCING FUNCTIONALITY, AND ASSOCIATED PHOTORESIST COMPOSITION AND ELECTRONIC DEVICE FORMING METHOD 有权聚合物包含具有光生产功能和碱溶性增强功能的重复单元，以及相关的光电组合物和电子设备形成方法公开(公告)号：US20160102157A1
公开(公告)日：2016-04-14
申请号：US14833245
申请日：2015-08-24
发明人： Vipul Jain , Paul J. LaBeaume , James W. Thackeray , James F. Cameron , Suzanne M. Coley , Amy M. Kwok , David A. Valeri
CPC分类号： C08F22/10 , C07C309/12 , C07C381/12 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/20 , G03F7/38 , H01L21/0274 , H01L21/0275
摘要： A polymer includes repeat units, at least half of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.
摘要翻译： 聚合物包括重复单元，其中至少一半是产生光致酸的重复单元。 每个产生光酸的重复单元包括光产酸功能和碱溶性增强功能。 该聚合物可用作光致抗蚀剂组合物的组分，该组合物还包括在酸作用下在碱性显影剂中表现出溶解度变化的第二聚合物。
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公开(公告)号：US11940732B2
公开(公告)日：2024-03-26
申请号：US17231417
申请日：2021-04-15
发明人： Sheng Liu , James F. Cameron , Shintaro Yamada , Iou-Sheng Ke , Keren Zhang , Suzanne M. Coley , Li Cui , Paul J. LaBeaume , Deyan Wang
IPC分类号： G03F7/11 , C09D4/06 , C09D7/47 , C09D7/63 , G03F7/025 , G03F7/075 , G03F7/09 , G03F7/16 , G03F7/20
CPC分类号： G03F7/11 , C09D4/06 , C09D7/47 , C09D7/63 , G03F7/025 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/16 , G03F7/2016
摘要： Coating compositions comprise: a curable compound comprising: a core chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, a C4-30 fused heterocyclic aromatic ring system, C1-20 aliphatic, and C3-20 cycloaliphatic, and three or more substituents of formula (1)
wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.-
公开(公告)号：US20220197142A1
公开(公告)日：2022-06-23
申请号：US17124751
申请日：2020-12-17
IPC分类号： G03F7/11 , C08G65/40 , C09D171/12 , C08G73/06 , C09D179/04 , C08F220/18 , C09D133/10 , C23C16/02 , C23C16/20 , C23C16/455 , G03F7/16 , G03F7/42 , H01L21/027
摘要： A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.
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