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公开(公告)号：US10301738B2
公开(公告)日：2019-05-28
申请号：US15724120
申请日：2017-10-03
发明人： Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号： C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/02 , C25D5/12 , C25D5/56 , C25D7/12 , C25D17/00 , C25D21/04 , C25D21/12 , H01L21/02 , H01L21/67 , H01L21/288 , H01L21/321 , H01L21/768
摘要： Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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公开(公告)号：US09899230B2
公开(公告)日：2018-02-20
申请号：US15231623
申请日：2016-08-08
IPC分类号： B44C1/22 , H01L21/311 , H01L21/02 , H01L21/306 , H01L21/67 , G03F7/42 , C25D5/02 , C25D7/12 , H01L21/683
CPC分类号： H01L21/31133 , C25D5/022 , C25D7/12 , G03F7/42 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/30604 , H01L21/6708 , H01L21/6838
摘要： The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.
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公开(公告)号：US09449808B2
公开(公告)日：2016-09-20
申请号：US13904283
申请日：2013-05-29
IPC分类号： C23F1/00 , H01L21/02 , H01L21/306 , H01L21/67 , G03F7/42 , H01L21/311
CPC分类号： H01L21/31133 , C25D5/022 , C25D7/12 , G03F7/42 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/30604 , H01L21/6708 , H01L21/6838
摘要： The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.
摘要翻译： 本文公开的实施例涉及用于从衬底去除材料的新颖方法和设备。 在某些实施例中，尽管公开的技术可以被实现以去除各种材料，但是使用该方法和装置来去除负光致抗蚀剂。 在实践所公开的实施例中，剥离溶液可以从入口引入内部歧管，有时称为横流歧管。 溶液横向流过衬底和基板之间的较窄的空腔。 流体在出口处离开狭窄的空腔，出口位于基板的另一侧，与入口和内部歧管相对。 衬底在与剥离溶液接触的同时旋转，以在衬底的表面上实现更均匀的流动。 在一些实施例中，基板包括用于增加靠近基板的表面的流速（从而增加局部Re）的突起。
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公开(公告)号：US09534308B2
公开(公告)日：2017-01-03
申请号：US13902517
申请日：2013-05-24
CPC分类号： C25D21/18 , C25D3/60 , C25D5/00 , C25D17/001 , C25D17/002 , C25D17/10 , C25D21/06
摘要： An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.
摘要翻译： 用于连续同时电镀具有基本上不同的标准电沉积电位（例如，用于沉积Sn-Ag合金）的两种金属的装置包括阳极室，用于容纳包含第一少量贵金属（例如锡）的离子的阳极电解液， 但不是第二个，更高贵的金属（例如银）和活性阳极; 阴极室，用于容纳包含第一金属（例如锡）的离子，第二，更贵金属（例如银）的离子和底物的阴极电解液; 位于阳极室和阴极室之间的分离结构，其中分离结构基本上防止更贵族金属从阴极电解液转移到阳极电解液; 流体特征和相关联的控制器，其耦合到所述装置并且被配置为执行连续电镀，同时在延长的使用期限内保持基本恒定的电镀浴组分的浓度。
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公开(公告)号：US20160281255A1
公开(公告)日：2016-09-29
申请号：US15181150
申请日：2016-06-13
发明人： Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号： C25D7/12 , H01L21/67 , H01L21/768 , C25D5/56 , C25D21/12 , C25D3/30 , C25D5/02 , C25D5/12 , C25D21/04 , H01L21/288 , C25D3/12
CPC分类号： C25D7/123 , C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/003 , C25D5/022 , C25D5/12 , C25D5/56 , C25D17/001 , C25D21/04 , C25D21/12 , H01L21/02307 , H01L21/2885 , H01L21/321 , H01L21/67051 , H01L21/67138 , H01L21/76861 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L21/76898
摘要： Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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6.发明申请公开(公告)号：US20150041327A1
公开(公告)日：2015-02-12
申请号：US13960624
申请日：2013-08-06
CPC分类号： C25D21/04 , C25D3/12 , C25D17/001 , C25D17/002 , C25D21/12 , C25D21/14
摘要： Disclosed herein are electroplating systems for electroplating nickel onto a semiconductor substrate having an electroplating cell for holding an electrolyte solution during electroplating which includes a cathode chamber and an anode chamber configured to hold a nickel anode, and having an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber during electroplating and during idle times when the system is not electroplating. Also disclosed herein are methods of electroplating nickel onto a substrate in an electroplating cell having anode and cathode chambers, which include reducing the oxygen concentration in an electrolyte solution, flowing the electrolyte solution into the anode chamber and contacting a nickel anode therein, and electroplating nickel from the electrolyte solution onto a substrate in the cathode chamber, wherein the electrolyte solution in the cathode chamber is maintained at a pH of between about 3.5 and 4.5.
摘要翻译： 本文公开了一种电镀系统，用于将镍电镀到具有用于在电镀期间保持电解质溶液的电镀单元的半导体衬底上，所述电镀单元包括阴极室和构造成保持镍阳极的阳极室，并且具有设置成减少氧浓度的除氧装置 在电解液中，当电镀期间和当系统不进行电镀时的空闲时间期间其流向阳极室。 本文还公开了在具有阳极和阴极室的电镀电池中将镍电镀到基底上的方法，其包括降低电解质溶液中的氧浓度，使电解质溶液流入阳极室并使其与镍阳极接触，以及电镀镍 从所述电解质溶液到所述阴极室中的衬底上，其中所述阴极室中的电解质溶液的pH保持在约3.5至4.5之间。
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公开(公告)号：US10954605B2
公开(公告)日：2021-03-23
申请号：US16122589
申请日：2018-09-05
摘要： An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.
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公开(公告)号：US20180371637A1
公开(公告)日：2018-12-27
申请号：US16122589
申请日：2018-09-05
摘要： An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.
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公开(公告)号：US20180023209A1
公开(公告)日：2018-01-25
申请号：US15724120
申请日：2017-10-03
发明人： Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号： C25D7/12 , H01L21/321 , H01L21/67 , C25D5/00 , C25D21/04 , C25D3/12 , C25D21/12 , H01L21/288 , C25D5/02 , C25D5/12 , H01L21/768
CPC分类号： C25D7/123 , C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/003 , C25D5/022 , C25D5/12 , C25D5/56 , C25D17/001 , C25D21/04 , C25D21/12 , H01L21/02307 , H01L21/2885 , H01L21/321 , H01L21/67051 , H01L21/67138 , H01L21/76861 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L21/76898
摘要： Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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公开(公告)号：US09828688B2
公开(公告)日：2017-11-28
申请号：US15181150
申请日：2016-06-13
发明人： Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号： C25D7/12 , C25D5/02 , C25D5/12 , C25D5/56 , H01L21/67 , C25D3/12 , H01L21/768 , C25D5/00 , C25D21/12 , C25D3/30 , H01L21/321 , H01L21/288 , C25D21/04 , C25D17/00 , H01L21/02 , C25D3/38
CPC分类号： C25D7/123 , C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/003 , C25D5/022 , C25D5/12 , C25D5/56 , C25D17/001 , C25D21/04 , C25D21/12 , H01L21/02307 , H01L21/2885 , H01L21/321 , H01L21/67051 , H01L21/67138 , H01L21/76861 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L21/76898
摘要： Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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