公开(公告)号：US20240361693A1

公开(公告)日：2024-10-31

申请号：US18580370

申请日：2022-07-25

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Takumi OKADA ,  Ryosuke HOSHINO ,  Hideyuki SATO ,  Masayuki KATAGIRI ,  Shu SUZUKI ,  Masatoshi ECHIGO

IPC: G03F7/105 ,  G03F7/004 ,  G03F7/16 ,  H01L21/02 ,  H01L21/027

CPC classification number: G03F7/105 ,  G03F7/0048 ,  G03F7/162 ,  G03F7/168 ,  H01L21/02087 ,  H01L21/0275

Abstract: A thinner composition includes: (B) a solvent containing: (B1) a compound represented by the following general formula (b-1): wherein R1 is an alkyl group having 1 to 10 carbon atoms. A method for manufacturing a semiconductor device includes applying the thinner composition to a substrate, before applying a photoresist film material or a photoresist underlayer film material to the substrate.

公开(公告)号：US12068153B2

公开(公告)日：2024-08-20

申请号：US17829288

申请日：2022-05-31

Applicant: Applied Materials, Inc.

Inventor： Kaushik Alayavalli ,  Andrew Nguyen ,  Edward Haywood ,  Lu Liu ,  Malav Kapadia

IPC: H01J21/02 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/02087 ,  H01J37/3244 ,  H01J2237/335

Abstract: Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.

公开(公告)号：US20230386824A1

公开(公告)日：2023-11-30

申请号：US18231196

申请日：2023-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Lung HOU ,  Ming-Hsien LIN

IPC: H01L21/02 ,  C25D21/12 ,  C25D7/12 ,  C25D5/54 ,  H01L21/67 ,  B08B13/00 ,  H01L21/288 ,  H01L21/66 ,  B08B3/08 ,  B08B3/02

CPC classification number: H01L21/02087 ,  C25D21/12 ,  C25D7/12 ,  C25D5/54 ,  H01L21/67051 ,  B08B13/00 ,  H01L21/2885 ,  H01L22/26 ,  B08B3/08 ,  B08B3/02 ,  H01L21/67253

Abstract: An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate a tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

公开(公告)号：US11823916B2

公开(公告)日：2023-11-21

申请号：US17091105

申请日：2020-11-06

Applicant: Applied Materials, Inc.

Inventor： Wei Lu ,  Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/02087 ,  H01L21/67248 ,  H01L21/68721

Abstract: The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.

公开(公告)号：US11740559B2

公开(公告)日：2023-08-29

申请号：US17498437

申请日：2021-10-11

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/67 ,  G03F7/42 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/422 ,  G03F7/0042 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0273 ,  H01L21/02087 ,  H01L21/67051

Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

公开(公告)号：US20180277401A1

公开(公告)日：2018-09-27

申请号：US15933237

申请日：2018-03-22

Applicant: EBARA CORPORATION

Inventor： Toshifumi WATANABE ,  Satoru YAMAMOTO ,  Yu MACHIDA

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/67051 ,  B24B9/065 ,  B24B21/002 ,  B24B21/004 ,  B24B21/008 ,  B24B37/00 ,  H01L21/02021 ,  H01L21/02087 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20

Abstract: A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion of the substrate is disclosed. The substrate processing method includes polishing a peripheral portion of the substrate by pressing a polishing tape having abrasive grains against the peripheral portion of the substrate with a first head, cleaning the peripheral portion of the substrate by supplying a cleaning liquid to the peripheral portion of the substrate after polishing, bringing a tape having no abrasive grains into contact with the peripheral portion of the substrate after cleaning by a second head, applying light to the tape and receiving reflected light from the tape by a sensor, and judging that the peripheral portion of the substrate is contaminated when an intensity of the received reflected light is lower than a predetermined value.

公开(公告)号：US09929017B2

公开(公告)日：2018-03-27

申请号：US13788216

申请日：2013-03-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Nagisa Takami ,  Yoshihiro Uozumi

IPC: H01L21/306 ,  H01L21/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/32134 ,  H01L21/6708 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a chemical solution having hydrogen peroxide as a main component. The chemical solution contains 12 ppm or more and 100,000 ppm or less of W.

公开(公告)号：US20180040474A1

公开(公告)日：2018-02-08

申请号：US15491066

申请日：2017-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  B08B3/08 ,  G03F7/40 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  C11D11/00 ,  H01L21/02 ,  G03F7/095

CPC classification number: H01L21/0274 ,  B08B3/08 ,  C11D11/0047 ,  G03F7/0043 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/095 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/425 ,  G03F7/426 ,  G03F7/70033 ,  G03F7/70091 ,  G03F7/70233 ,  G03F7/70308 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67051

Abstract: A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.

公开(公告)号：US09753371B2

公开(公告)日：2017-09-05

申请号：US15369075

申请日：2016-12-05

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Yang Liu ,  Qiang Wu

IPC: B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  G03F7/42 ,  H01L21/02 ,  H01L21/67 ,  B08B3/04 ,  F26B21/00

CPC classification number: G03F7/42 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B5/02 ,  F26B21/004 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/02087 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708

Abstract: An edge bead removal apparatus is provided. The edge bead removal apparatus includes a clamping unit configured to clamp a cylindrical reticle and cause the cylindrical reticle to incline with a pre-determined angle and to rotate around a central axis. The edge bead removal apparatus also includes an edge bead removal solvent nozzle configured to spray an edge bead removal solvent to remove edge beads on both edges of the cylindrical reticle.

公开(公告)号：US09666440B2

公开(公告)日：2017-05-30

申请号：US14142690

申请日：2013-12-27

Applicant: EBARA CORPORATION

Inventor： Masayuki Nakanishi ,  Kenji Kodera ,  Nobuhiro Yanaka

IPC: H01L21/304 ,  B24B9/06 ,  B24B57/02 ,  B24B37/02 ,  B24B9/08 ,  H01L21/02

CPC classification number: H01L21/304 ,  B24B9/065 ,  B24B9/08 ,  B24B37/02 ,  B24B57/02 ,  H01L21/02057 ,  H01L21/02087

Abstract: A polishing apparatus 100 includes a holding stage 4 that holds a central portion of a back surface of a substrate W, a motor M1 that rotates the holding stage 4, a front surface nozzle 36 that feeds a rinse liquid to a front surface of the substrate W, a back surface nozzle 37 that feeds the rinse liquid to a back surface of the substrate W, a rinse liquid control section 110 that feeds the rinse liquid through the back surface nozzle 37 after a preset time elapses since the start of feeding of the rinse liquid through the front surface nozzle 36 and a polishing head assembly 1A that polishes a peripheral portion of the substrate installed on the holding stage 4 after the rinse liquid control section 110 feeds the rinse liquid to the substrate W.