公开(公告)号：US11914300B2

公开(公告)日：2024-02-27

申请号：US17161058

申请日：2021-01-28

申请人： FUJIFILM Corporation

发明人： Tetsuya Kamimura

IPC分类号： G03F7/32 ,  B24B37/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/28 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

CPC分类号： G03F7/327 ,  B24B37/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/0758 ,  G03F7/16 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/325 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/28 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877

摘要： The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

公开(公告)号：US11869788B2

公开(公告)日：2024-01-09

申请号：US16636960

申请日：2018-08-09

申请人： EBARA CORPORATION

发明人： Koji Maeda ,  Mitsuhiko Inaba ,  Haiyang Xu ,  Tetsuya Yashima

IPC分类号： H01L21/67 ,  H01L21/677 ,  B24B37/00 ,  H01L21/304 ,  B08B15/00 ,  B24B37/34

CPC分类号： H01L21/677 ,  B08B15/005 ,  B24B37/00 ,  B24B37/345 ,  H01L21/304

摘要： A substrate processing apparatus includes a first processing unit and a second processing unit placed in upper and lower two stages. Each processing unit has: a plurality of processing tanks arranged in series; a partition wall defining a conveyance space extending along an arrangement direction outside the plurality of processing tanks; a conveyance mechanism placed in the conveyance space and being configured to convey a substrate between the processing tanks along the arrangement direction; and an air guide duct provided to extend along the arrangement direction in the conveyance space. The air guide duct is connected with a fan filter unit. Each of the processing tanks is connected with an exhaust duct. An opening is formed in each of parts facing the processing tank in the air guide duct. The conveyance spaces of the first and second processing units are separated into upper and lower segments by the partition wall.

公开(公告)号：US11840645B2

公开(公告)日：2023-12-12

申请号：US17163372

申请日：2021-01-30

申请人： ENTEGRIS, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： Rajiv K. Singh ,  Sunny De ,  Deepika Singh ,  Chaitanya Dnyanesh Ginde ,  Aditya Dilip Verma

IPC分类号： C09G1/02 ,  H01L21/321 ,  B24B37/00

CPC分类号： C09G1/02 ,  B24B37/00 ,  H01L21/3212

摘要： A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.

公开(公告)号：US20190241766A1

公开(公告)日：2019-08-08

申请号：US16338184

申请日：2017-09-28

申请人： KAO CORPORATION

发明人： Haruhiko DOI

IPC分类号： C09G1/02 ,  H01L21/306

CPC分类号： C09G1/02 ,  B24B37/00 ,  C09K3/14 ,  H01L21/304 ,  H01L21/30625

摘要： Provided is a polishing composition capable of improving polishing selectivity and reducing polishing unevenness while increasing polishing rate.The present disclosure relates to a polishing composition containing; cerium oxide particles A; a polysaccharide B having a weight average molecular weight of 800 or more and 2800 or less; and water.

公开(公告)号：US20190194493A1

公开(公告)日：2019-06-27

申请号：US16328490

申请日：2018-06-27

申请人： JSR CORPORATION

发明人： Katsutaka YOKOI ,  Ken-ichi YAMAMOTO ,  Ran MITSUBOSHI ,  Kanae MASUDA ,  Satoshi KAMO ,  Tomotaka SHINODA

IPC分类号： C09G1/04 ,  H01L21/321 ,  H01L21/02 ,  H01L21/768

CPC分类号： C09G1/04 ,  B24B37/00 ,  H01L21/02074 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76883

摘要： Provided are a composition for semiconductor treatment capable of suppressing damage due to corrosion to wiring or the like including tungsten on an object to be treated, and efficiently removing contamination from a surface of the object to be treated, and a treatment method using the composition for semiconductor treatment. The treatment method includes a step of, after subjecting a wiring board including tungsten as a wiring material to chemical mechanical polishing using a composition containing an iron ion and a peroxide, subjecting the wiring board to treatment with a composition for semiconductor treatment which includes: a compound (A) having two or more of at least one selected from a group consisting of tertiary amino groups and salts thereof; and a water-soluble compound (B) having a solubility parameter of 10 or more, and which has a pH of from 2 to 7.

公开(公告)号：US20180281026A1

公开(公告)日：2018-10-04

申请号：US15942734

申请日：2018-04-02

申请人： Ebara Corporation

发明人： Fujihiko TOYOMASU ,  Junji KUNISAWA

IPC分类号： B08B3/08 ,  H01L21/67 ,  G05D7/06

CPC分类号： B08B3/08 ,  B24B37/00 ,  F15B2211/50554 ,  F15B2211/57 ,  F16K37/0091 ,  G05D7/0635 ,  G05D11/132 ,  H01L21/67017 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67253 ,  Y10T137/7759 ,  Y10T137/7761

摘要： The present invention provides a liquid supplying device that can determine whether a CLC can be used appropriately. A liquid supplying device for supplying a liquid from a liquid source to a cleaning device is provided. The liquid supplying device includes a flow rate control device that measures a flow rate of a liquid from the liquid source and controls the flow rate based on the measured value, an IN-side pressure gauge provided between the liquid source and the flow rate control device and an OUT-side pressure gauge provided between the flow rate control device and the cleaning device.

公开(公告)号：US20180215952A1

公开(公告)日：2018-08-02

申请号：US15505672

申请日：2015-07-02

申请人： FUJIMI INCORPORATED

发明人： Shogo ONISHI ,  Takahiro UMEDA

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1409 ,  H01L21/304 ,  H01L21/3212

摘要： The present invention provides a polishing composition which can achieve a high polishing speed for the layer containing copper and at the same time, can suppress dissolution of the layer containing cobalt, in polishing an object to be polished having a layer containing copper and a layer containing cobalt.Disclosed is a polishing composition used for polishing an object to be polished having a layer containing copper and a layer containing cobalt, which comprises an oxidizing agent, and at least one cobalt dissolution inhibitor selected from the group consisting of a compound having a nitrogen-containing 5-membered ring structure, and an aminocarboxylic acid having two or more carboxyl groups.

公开(公告)号：US20180016676A1

公开(公告)日：2018-01-18

申请号：US15647684

申请日：2017-07-12

申请人： EBARA CORPORATION

发明人： Akira NAKAMURA

IPC分类号： C23C14/54 ,  G01N27/02

CPC分类号： C23C14/542 ,  B24B37/00 ,  B24B37/013 ,  B24B37/107 ,  B24B49/04 ,  B24B49/105 ,  G01N27/025

摘要： Eddy current formable in a polishing target is detected as an impedance by an eddy current sensor. A resistance component and a reactance component of the impedance are associated with respective axes of a coordinate system having orthogonal axes, respectively. An angle calculator calculates the tangent of an intersection angle between a first straight line connecting a first point corresponding to an impedance for a zero film thickness, and a second point corresponding to an impedance for a non-zero film thickness, and a diameter of a circle passing through the first point. A film thickness calculator determines the film thickness from the tangent.

公开(公告)号：US09868886B2

公开(公告)日：2018-01-16

申请号：US14369881

申请日：2012-12-14

申请人： KONICA MINOLTA, INC.

发明人： Hazuki Nakae

IPC分类号： C09K3/14 ,  G11B5/84 ,  B24B37/00 ,  C01F17/00

CPC分类号： C09K3/1463 ,  B24B37/00 ,  C01F17/0043 ,  C01P2004/62 ,  C01P2006/80 ,  C09K3/1409 ,  G11B5/84 ,  G11B5/8404

摘要： Provided is an abrasive agent for substrates that includes, as an abrasive material component in the abrasive agent, cerium oxide as the main component. The abrasive agent for substrates includes soluble silica and cerium oxide. The concentration ratio of the soluble silica, calculated as Si content, and the cerium oxide in the abrasive agent is 0.001:1 to 0.1:1.

公开(公告)号：US20170362465A1

公开(公告)日：2017-12-21

申请号：US15544389

申请日：2016-01-19

申请人： FUJIMI INCORPORATED

发明人： Keiji ASHITAKA ,  Shogo TSUBOTA

IPC分类号： C09G1/02 ,  C01B33/149 ,  C07F7/02 ,  B24B37/04 ,  H01L21/3105 ,  C01B33/148 ,  C09K3/14 ,  H01L21/768

CPC分类号： C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C01B33/146 ,  C01B33/148 ,  C01B33/149 ,  C01P2004/03 ,  C01P2004/51 ,  C01P2004/61 ,  C07F7/025 ,  C09K3/14 ,  C09K3/1436 ,  H01L21/304 ,  H01L21/31053 ,  H01L21/76819

摘要： To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.Modified colloidal silica, being obtained by modifying raw colloidal silica, whereinthe raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.