公开(公告)号：US20240006437A1

公开(公告)日：2024-01-04

申请号：US18252839

申请日：2021-11-08

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： YOSUKE NITTA ,  NOBUTOSHI FUJII ,  SUGURU SAITO

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L23/528

CPC分类号： H01L27/14623 ,  H01L27/14636 ,  H01L21/3205 ,  H01L23/5283 ,  H01L27/14627

摘要： While improving the bonding strength between a plurality of semiconductor substrates, the passage of noise from one of the plurality of semiconductor substrates to another is suppressed. A solid-state imaging device includes a first semiconductor substrate including a first semiconductor layer in which a photoelectric conversion unit is formed, and a first multilayer wiring layer including an interlayer insulating film, a second semiconductor substrate including a second semiconductor layer in which a circuit is formed and a second multilayer wiring layer including an interlayer insulating film, the second multilayer wiring layer being bonded to the first multilayer wiring layer, a light shielding layer provided in at least one of the first multilayer wiring layer or the second multilayer wiring layer so as to be exposed to a bonding surface between the first multilayer wiring layer and the second multilayer wiring layer, and an antioxidant layer provided in at least one of the first multilayer wiring layer or the second multilayer wiring layer and provided at least either between the light shielding layer and the interlayer insulating film of the first multilayer wiring layer or between the light shielding layer and the interlayer insulating film of the second multilayer wiring layer.

公开(公告)号：US20230402411A1

公开(公告)日：2023-12-14

申请号：US18238082

申请日：2023-08-25

申请人： SONY GROUP CORPORATION

发明人： Masaki HANEDA

IPC分类号： H01L23/00 ,  H01L27/14 ,  H01L25/065 ,  H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L27/14 ,  H01L25/0657 ,  H01L24/80 ,  H01L24/08 ,  H01L24/89 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L2224/08121 ,  H01L2224/05639 ,  H01L2224/05007 ,  H01L2224/05655 ,  H01L2224/08147 ,  H01L2224/80097 ,  H01L2224/80948 ,  H01L2224/05618 ,  H01L2224/05657 ,  H01L2224/80986 ,  H01L2224/0566 ,  H01L24/03 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/0801 ,  H01L2224/08145 ,  H01L2224/80009 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0104 ,  H01L2924/05442

摘要： Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.

公开(公告)号：US11830734B2

公开(公告)日：2023-11-28

申请号：US17324352

申请日：2021-05-19

申请人： Applied Materials, Inc.

发明人： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/02 ,  H01L21/3205

CPC分类号： H01L21/02532 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02612 ,  H01L21/02658 ,  H01L21/3205

摘要： Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.

公开(公告)号：US20230343602A1

公开(公告)日：2023-10-26

申请号：US17655832

申请日：2022-03-22

申请人： Ferric Inc.

发明人： Michael Lekas ,  Salahuddin Raju ,  Noah Sturcken ,  Ryan Davies ,  Denis Shishkov

IPC分类号： H01L21/324 ,  H01L21/3205 ,  H01L21/02

CPC分类号： H01L21/3205 ,  H01L21/02172 ,  H01L21/324

摘要： A method for manufacturing a ferromagnetic-dielectric composite material comprises: (a) placing patterned ferromagnetic layer regions, in a patterning substrate assembly that includes a patterning substrate and a first dielectric layer, in physical contact with a second dielectric layer, the second dielectric layer in a receiving substrate assembly that includes a receiving substrate, (b) forming a bond between the patterned ferromagnetic layer regions and the second dielectric layer; (c) releasing the patterning substrate from the patterning substrate assembly to transfer the patterned ferromagnetic layer regions and the first dielectric layer from the patterning substrate assembly to the receiving substrate assembly; and (d) releasing the receiving substrate from the receiving substrate assembly to form the ferromagnetic-dielectric composite material.

公开(公告)号：US11776935B2

公开(公告)日：2023-10-03

申请号：US17853524

申请日：2022-06-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jing-Cheng Lin ,  Chen-Hua Yu ,  Po-Hao Tsai

IPC分类号： H01L25/065 ,  H01L23/50 ,  H01L23/552 ,  H01L21/3205 ,  H01L25/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L21/3205 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L25/50 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.

公开(公告)号：US20190237459A1

公开(公告)日：2019-08-01

申请号：US16330937

申请日：2017-09-28

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： YOHEI HIURA

IPC分类号： H01L27/02 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L27/0292 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/823475 ,  H01L23/522 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0266 ,  H01L27/0288 ,  H01L27/04 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78

摘要： The present disclosure relates to a semiconductor device, a method for manufacturing a semiconductor device, and a plasma-induced damage (PID) protection device capable of, without increasing a chip area, releasing a large PID with high efficiency and protecting an element to be protected from the PID with higher accuracy. There are provided a protection metal-oxide-semiconductor field-effect transistor (MOSFET) that includes a drain connected to a gate electrode of a MOSFET to be protected and a grounded source and protects the MOSFET to be protected from a plasma-induced damage (PID), and a dummy antenna connected to a gate electrode of the protection MOSFET, the dummy antenna turning on the protection MOSFET prior to the MOSFET to be protected due to PID charge. The present disclosure can be applied to a semiconductor device.

公开(公告)号：US10083924B2

公开(公告)日：2018-09-25

申请号：US14891319

申请日：2014-11-13

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Kazuyoshi Maekawa ,  Yuichi Kawano

IPC分类号： H01L23/12 ,  H01L23/00 ,  H01L21/3205 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L24/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/02181 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/0347 ,  H01L2224/035 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05566 ,  H01L2224/05567 ,  H01L2224/05664 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/4502 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/01008

摘要： A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.

公开(公告)号：US20180247892A1

公开(公告)日：2018-08-30

申请号：US15752818

申请日：2016-07-25

申请人： HITACHI AUTOMOTIVE SYSTEMS, LTD.

发明人： Katsumi IKEGAYA ,  Takayuki OSHIMA

IPC分类号： H01L23/522 ,  H01L27/088

CPC分类号： H01L23/5228 ,  H01F7/064 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/5226 ,  H01L27/088 ,  H01L29/78

摘要： On a transistor layer having arranged thereon multiple transistors each including a drain, a source, and a gate, metal interconnection layers serving as input side interconnection layers connected to the drains of the respective transistors and metal interconnection layers serving as output side interconnection layers connected to the sources of the respective transistors are arranged in parallel. Also provided are a plurality of through holes connecting the metal interconnection layers serving as input side interconnection layers to the drains of the respective transistors and connecting the metal interconnection layers serving as output side interconnection layers to the sources of the respective transistors. Resistance values of the plurality of through holes are changed along an arranging direction of the input side interconnection layers and the output side interconnection layers. Accordingly, current densities of the transistors arranged to be distributed in a two-dimensional manner can be uniform.

公开(公告)号：US20180166549A1

公开(公告)日：2018-06-14

申请号：US15792772

申请日：2017-10-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Ryoichi KATO ,  Hiromichi GOHARA ,  Takafumi YAMADA ,  Kohei YAMAUCHI ,  Tatsuhiko ASAI ,  Yoshitaka NISHIMURA ,  Akio KITAMURA ,  Hajime MASUBUCHI ,  Souichi YOSHIDA

IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L23/28 ,  H01L23/367

CPC分类号： H01L29/42376 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/28 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/50 ,  H01L24/73 ,  H01L25/07 ,  H01L25/18 ,  H01L29/423 ,  H01L29/739 ,  H01L2224/73263

摘要： A semiconductor device including a semiconductor element, an upper-surface electrode provided on an upper surface of the semiconductor element, a plated layer provided on an upper surface of the upper-surface electrode, one or more gate runners penetrating the plated layer and provided to extend in a predetermined direction on the upper surface of the semiconductor element, and a metal connecting plate that is arranged above the plated layer and is electrically connected to the upper-surface electrode, wherein the metal connecting plate has a joint portion parallel to the upper surface of the semiconductor element and has a rising portion that is connected to a first end of the joint portion and extends in a direction away from the upper surface of the semiconductor element, and in a plane parallel to the upper surface of the semiconductor element, the rising portion and the gate runner do not overlap with each other.

公开(公告)号：US20180130666A1

公开(公告)日：2018-05-10

申请号：US15824143

申请日：2017-11-28

申请人： ASM International N.V.

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： H01L21/285 ,  C23C16/455 ,  H01L21/28 ,  C23C16/32

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.