公开(公告)号：US20190237459A1

公开(公告)日：2019-08-01

申请号：US16330937

申请日：2017-09-28

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： YOHEI HIURA

IPC分类号： H01L27/02 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L27/0292 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/823475 ,  H01L23/522 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0266 ,  H01L27/0288 ,  H01L27/04 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78

摘要： The present disclosure relates to a semiconductor device, a method for manufacturing a semiconductor device, and a plasma-induced damage (PID) protection device capable of, without increasing a chip area, releasing a large PID with high efficiency and protecting an element to be protected from the PID with higher accuracy. There are provided a protection metal-oxide-semiconductor field-effect transistor (MOSFET) that includes a drain connected to a gate electrode of a MOSFET to be protected and a grounded source and protects the MOSFET to be protected from a plasma-induced damage (PID), and a dummy antenna connected to a gate electrode of the protection MOSFET, the dummy antenna turning on the protection MOSFET prior to the MOSFET to be protected due to PID charge. The present disclosure can be applied to a semiconductor device.