公开(公告)号：US20220181377A1

公开(公告)日：2022-06-09

申请号：US17436985

申请日：2020-01-07

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： YOSUKE NITTA

IPC分类号： H01L27/146

摘要： A semiconductor device (50) according to the present disclosure includes: a first substrate (20) configured to be individualized and include a first semiconductor circuit (LOG) including a first terminal (25); and a second substrate (10) configured to include a second semiconductor circuit (PIX) including a second terminal (16), in which the first terminal (25) and the second terminal (16) are joined, and the second substrate (10) includes: a first insulating layer (13) that is arranged above the second substrate (10), and a second insulating layer (14) that is arranged at least partially above the first insulating layer (13) and in which the second terminal (16) is arranged.

公开(公告)号：US20240006437A1

公开(公告)日：2024-01-04

申请号：US18252839

申请日：2021-11-08

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： YOSUKE NITTA ,  NOBUTOSHI FUJII ,  SUGURU SAITO

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L23/528

CPC分类号： H01L27/14623 ,  H01L27/14636 ,  H01L21/3205 ,  H01L23/5283 ,  H01L27/14627

摘要： While improving the bonding strength between a plurality of semiconductor substrates, the passage of noise from one of the plurality of semiconductor substrates to another is suppressed. A solid-state imaging device includes a first semiconductor substrate including a first semiconductor layer in which a photoelectric conversion unit is formed, and a first multilayer wiring layer including an interlayer insulating film, a second semiconductor substrate including a second semiconductor layer in which a circuit is formed and a second multilayer wiring layer including an interlayer insulating film, the second multilayer wiring layer being bonded to the first multilayer wiring layer, a light shielding layer provided in at least one of the first multilayer wiring layer or the second multilayer wiring layer so as to be exposed to a bonding surface between the first multilayer wiring layer and the second multilayer wiring layer, and an antioxidant layer provided in at least one of the first multilayer wiring layer or the second multilayer wiring layer and provided at least either between the light shielding layer and the interlayer insulating film of the first multilayer wiring layer or between the light shielding layer and the interlayer insulating film of the second multilayer wiring layer.

公开(公告)号：US20230282661A1

公开(公告)日：2023-09-07

申请号：US18040112

申请日：2021-08-13

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： YOSUKE NITTA ,  NOBUTOSHI FUJII ,  SUGURU SAITO ,  YOICHI OOTSUKA

IPC分类号： H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/14685 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14687

摘要： A contact of a glass substrate with an on-chip lens is suppressed while suppressing occurrence of flare. A package includes a flattening film covering an on-chip lens formed on a light incidence side of a substrate having an element formed thereon, a transparent substrate formed on the light incidence side of the flattening film, a hollow portion formed in a region overlapping the on-chip lens when seen in a plan view with respect to at least one of between the flattening film and the transparent substrate and inside the transparent substrate, and a through-hole making the hollow portion communicate with the outside.