Cylindrical reticle system, exposure apparatus and exposure method
    4.
    发明授权
    Cylindrical reticle system, exposure apparatus and exposure method 有权
    圆柱标线系统,曝光装置和曝光方法

    公开(公告)号:US09323163B2

    公开(公告)日:2016-04-26

    申请号:US14029939

    申请日:2013-09-18

    Inventor: Qiang Wu Yiming Gu

    CPC classification number: G03F7/70741

    Abstract: A cylindrical reticle system is provided for performing a unidirectional scan-exposure. The cylindrical reticle system includes a base and a center shaft fixed a one side of the base. The cylindrical reticle system also includes a first bearing fixed at the end of the center shaft near to the base and a second bearing fixed at the other end of the center shaft far from the base. Further, the cylindrical reticle system includes a cylindrical reticle having an imaging region and two non-imaging regions at both end of the imaging region.

    Abstract translation: 提供圆柱形掩模版系统用于执行单向扫描曝光。 圆柱形掩模版系统包括基座和固定在基座一侧的中心轴。 圆柱形标线系统还包括固定在靠近基座的中心轴的端部处的第一轴承和固定在远离基座的中心轴的另一端的第二轴承。 此外,圆柱形掩模版系统包括具有成像区域和成像区域两端的两个非成像区域的圆柱形掩模版。

    Apparatus and method for overlay measurement

    公开(公告)号:US10042269B2

    公开(公告)日:2018-08-07

    申请号:US15136482

    申请日:2016-04-22

    Abstract: The present disclosure provides apparatus and methods for overlay measurement. An exemplary overlay measurement apparatus includes an illuminating unit, configured to generate light to illuminate a first overlay marker having a first sub-overlay marker along a first direction and a second overlay marker along a second direction; a first measuring unit, configured to receive light reflected from the first overlay marker to cause the reflected light to laterally shift and shear to generate interference light, to receive the interference light to form a first image and to determine existence of overlay offsets along the first direction and the second direction and values of the overlay offset; and a first drive unit connected to the first measuring unit, and configured to drive the first measuring unit to rotate from a first position to a second position to measure the first sub-overlay marker and the second sub-overlay marker, respectively.

    Exposure apparatus, photolithographical reticles and exposure methods thereof

    公开(公告)号:US09606451B2

    公开(公告)日:2017-03-28

    申请号:US14560803

    申请日:2014-12-04

    CPC classification number: G03F7/70358 G03F7/70283 G03F7/70725

    Abstract: An exposure apparatus is provided for performing a column scan-exposure process. The exposure apparatus includes a base for supporting the exposure apparatus; and a reticle stage configured for holding a reticle having at two mask pattern regions and carrying the reticle to move reciprocally along a scanning direction. The exposure apparatus also includes a wafer stage configured for holding a wafer and carrying the wafer to move reciprocally along the scanning direction. Further, the exposure apparatus includes a control unit configured to control the reticle stage and the wafer stage to cooperatively move to cause the at least two mask pattern regions of the reticle on the reticle stage to be continuously and sequentially projected on at least two corresponding exposure shots of the wafer on the wafer stage along the scanning direction to perform a column scan-exposure process.

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