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Patent Agency Ranking
公开(公告)号：US09606451B2
公开(公告)日：2017-03-28
申请号：US14560803
申请日：2014-12-04
Inventor： Qiang Wu , Chang Liu , Jing'An Hao , Huayong Hu , Yang Liu
CPC classification number: G03F7/70358 , G03F7/70283 , G03F7/70725
Abstract: An exposure apparatus is provided for performing a column scan-exposure process. The exposure apparatus includes a base for supporting the exposure apparatus; and a reticle stage configured for holding a reticle having at two mask pattern regions and carrying the reticle to move reciprocally along a scanning direction. The exposure apparatus also includes a wafer stage configured for holding a wafer and carrying the wafer to move reciprocally along the scanning direction. Further, the exposure apparatus includes a control unit configured to control the reticle stage and the wafer stage to cooperatively move to cause the at least two mask pattern regions of the reticle on the reticle stage to be continuously and sequentially projected on at least two corresponding exposure shots of the wafer on the wafer stage along the scanning direction to perform a column scan-exposure process.
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公开(公告)号：US09547236B2
公开(公告)日：2017-01-17
申请号：US14568317
申请日：2014-12-12
Inventor： Qiang Wu , Huayong Hu , Chang Liu , Jianhua Ju , Charles Kwok Fung Lee
CPC classification number: B05D3/06 , B05B7/228 , B05D1/02 , B41J2/447 , G03F7/0002
Abstract: A patterning apparatus is provided. The patterning apparatus includes a plurality of liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate. The patterning apparatus also includes a plurality of exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid to form anti-etching patterns on the surface of the substrate. Further, the patterning apparatus includes a control unit configured to control motion status and jetting status of the plurality of liquid jet units and motion status and exposure status of the plurality of exposure units, so as to form the anti-etching patterns at a predetermined line width and thickness.
Abstract translation: 提供了图案形成装置。 图案形成装置包括多个液体喷射单元，其以一个或多个组的形式排列并且构造成将抗蚀刻液体喷射到基板的表面上。 图案形成装置还包括多个曝光单元，其配置为在喷射在基板表面上的抗蚀刻液体上曝光，以加热和固化喷射的抗蚀刻液体，以在基板的表面上形成抗蚀刻图案。 此外，图案形成装置包括控制单元，其被配置为控制多个液体喷射单元的运动状态和喷射状态以及多个曝光单元的运动状态和曝光状态，以便在预定行上形成防蚀刻图案 宽度和厚度。
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公开(公告)号：US09298103B2
公开(公告)日：2016-03-29
申请号：US14020850
申请日：2013-09-08
Inventor： Qiang Wu , Chang Liu , Jing'an Hao
CPC classification number: G03F7/70616 , G03F1/42 , G03F7/703 , G03F7/70725 , G03F9/70
Abstract: An exposure apparatus is provided for performing a unidirectional scan-exposure. The exposure apparatus includes a base and a plurality of wafer stages on the base for loading/unloading wafers and successively moving from a first position to a second position of the base cyclically. The exposure apparatus also includes alignment detection units above the first position of the base for detecting alignment marks on the wafer and aligning the wafers and a cylindrical reticle system above the second position of the base. Further, the exposure apparatus includes an optical projection unit between the cylindrical reticle system and the base for projecting light onto the wafers for an exposure. Further, the exposure apparatus also includes an illuminator box and a main control unit.
Abstract translation: 提供用于进行单向扫描曝光的曝光装置。 曝光装置包括底座和底座上的多个晶片台，用于装载/卸载晶片，并且从基座的第一位置到第二位置循环移动。 曝光装置还包括在基座的第一位置之上的对准检测单元，用于检测晶片上的对准标记，并将晶片和在基座的第二位置上方的圆柱形标线系统对准。 此外，曝光装置包括在圆柱形掩模版系统和基座之间的光学投影单元，用于将光投射到晶片上用于曝光。 此外，曝光装置还包括照明箱和主控制单元。
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公开(公告)号：US10427185B2
公开(公告)日：2019-10-01
申请号：US15372091
申请日：2016-12-07
Inventor： Qiang Wu , Huayong Hu , Chang Liu , Jianhua Ju , Charles Kwok Fung Lee
Abstract: A patterning apparatus is provided. The patterning apparatus includes a plurality of liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate. The patterning apparatus also includes a plurality of exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid to form anti-etching patterns on the surface of the substrate. Further, the patterning apparatus includes a control unit configured to control motion status and jetting status of the plurality of liquid jet units and motion status and exposure status of the plurality of exposure units, so as to form the anti-etching patterns at a predetermined line width and thickness.
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公开(公告)号：US09411242B2
公开(公告)日：2016-08-09
申请号：US14040685
申请日：2013-09-29
IPC: G03B27/32 , G03B27/54 , G03B27/58 , G03F7/20 , G01D5/347 , H01L21/68 , G03F9/00 , G03F1/42 , G03F7/24
CPC classification number: G03F7/70141 , G01D5/34746 , G03F1/42 , G03F7/24 , G03F7/703 , G03F7/70725 , G03F7/70733 , G03F7/70775 , G03F9/7003 , G03F9/7088 , H01L21/681 , H01L21/682
Abstract: A wafer alignment system is provided for performing a unidirectional scan-exposure. The wafer alignment system includes a plurality of wafer stages successively moving from a first position to a second position of a base cyclically. The wafer alignment method also includes an encoder plate having a first opening and a second opening. Further, the wafer alignment system includes a plurality of encoder plate readers and a plurality of wafer stage fiducials on the wafer stages. Further, the wafer alignment system also includes an alignment detection unit above the first opening of the encoder plate.
Abstract translation: 提供了用于执行单向扫描曝光的晶片对准系统。 晶片对准系统包括从基座的第一位置到第二位置循环地连续移动的多个晶片台。 晶片对准方法还包括具有第一开口和第二开口的编码器板。 此外，晶片对准系统包括多个编码器板读取器和晶片台上的多个晶片级基准。 此外，晶片对准系统还包括在编码器板的第一开口之上的对准检测单元。
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