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公开(公告)号：US10073350B2
公开(公告)日：2018-09-11
申请号：US15026810
申请日：2014-09-25
CPC分类号： G03F7/2051 , G03F7/24 , G03F7/703 , G03F7/70791 , G03F9/00 , G03F9/7003 , G03F9/7084
摘要： The present disclosure generally relates to a method and apparatus for processing a web-based substrate. As the substrate travels between rollers, the substrate may be stretched and thus distorted. Once the substrate reaches the roller, the substrate distortion is fixed. By adjusting the processing parameters, the distorted substrate is processed without correcting the distortion.
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公开(公告)号：US09411242B2
公开(公告)日：2016-08-09
申请号：US14040685
申请日：2013-09-29
IPC分类号： G03B27/32 , G03B27/54 , G03B27/58 , G03F7/20 , G01D5/347 , H01L21/68 , G03F9/00 , G03F1/42 , G03F7/24
CPC分类号： G03F7/70141 , G01D5/34746 , G03F1/42 , G03F7/24 , G03F7/703 , G03F7/70725 , G03F7/70733 , G03F7/70775 , G03F9/7003 , G03F9/7088 , H01L21/681 , H01L21/682
摘要： A wafer alignment system is provided for performing a unidirectional scan-exposure. The wafer alignment system includes a plurality of wafer stages successively moving from a first position to a second position of a base cyclically. The wafer alignment method also includes an encoder plate having a first opening and a second opening. Further, the wafer alignment system includes a plurality of encoder plate readers and a plurality of wafer stage fiducials on the wafer stages. Further, the wafer alignment system also includes an alignment detection unit above the first opening of the encoder plate.
摘要翻译： 提供了用于执行单向扫描曝光的晶片对准系统。 晶片对准系统包括从基座的第一位置到第二位置循环地连续移动的多个晶片台。 晶片对准方法还包括具有第一开口和第二开口的编码器板。 此外，晶片对准系统包括多个编码器板读取器和晶片台上的多个晶片级基准。 此外，晶片对准系统还包括在编码器板的第一开口之上的对准检测单元。
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公开(公告)号：US20150098069A1
公开(公告)日：2015-04-09
申请号：US14047341
申请日：2013-10-07
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
CPC分类号： G03F7/70283 , G03F1/24 , G03F1/48 , G03F1/54 , G03F7/2004 , G03F7/70091 , G03F7/70158 , G03F7/703
摘要： A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states. A reflection coefficient is r1, r2 and r3, respectively, wherein r3 is close to (r1+r2)/2. The system also includes a nearly on-axis illumination (ONI) with partial coherence a less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light, removing most of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.
摘要翻译： 公开了一种极紫外光刻（EUVL）系统。 该系统包括具有三种状态的极紫外（EUV）掩模。 反射系数分别为r1，r2和r3，其中r3接近（r1 + r2）/ 2。 该系统还包括具有小于0.3的部分相干性的近轴上照明（ONI），以暴露EUV掩模以产生衍射光和非衍射光，去除大部分非衍射光，并收集和引导衍射 光和通过投影光学盒（POB）未被去除的非衍射光以暴露目标。
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公开(公告)号：US20150091230A1
公开(公告)日：2015-04-02
申请号：US14570651
申请日：2014-12-15
CPC分类号： G03F7/7035 , B25B11/005 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/703 , G03F7/70375
摘要： In an imprint lithography system, a recessed support on a template chuck may alter a shape of a template positioned thereon providing minimization and/or elimination of premature downward deflection of outer edges of the template in a nano imprint lithography process.
摘要翻译： 在压印光刻系统中，模板卡盘上的凹进的支撑件可以改变定位在其上的模板的形状，从而在纳米压印光刻工艺中最小化和/或消除模板的外边缘的过早向下偏移。
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公开(公告)号：US08964167B2
公开(公告)日：2015-02-24
申请号：US13512477
申请日：2010-10-28
申请人： Jeong Woo Jeon , Hyeon Seok Oh , Mitica Caraiani , Sung Il Chung , Hyeon Taeg Kim , Chang Rin Lee , Jong Moon Kim
发明人： Jeong Woo Jeon , Hyeon Seok Oh , Mitica Caraiani , Sung Il Chung , Hyeon Taeg Kim , Chang Rin Lee , Jong Moon Kim
CPC分类号： G03F7/70716 , G03F7/24 , G03F7/703 , G03F7/70725 , G03F7/70758 , G03F7/70791 , G03F7/70816 , G03F7/70825 , G03F7/70841 , H01L21/68
摘要： The present invention provides a cylindrical magnetic levitation stage and an exposure apparatus, which can form a nanoscale pattern of a large area directly on the surface of a large cylinder. The present invention provides an exposure apparatus including a new type of cylindrical magnetic levitation stage, which can levitate, rotate, and move a cylinder in the axial direction by the principle of magnetic levitation in a non-contact manner and form a nanoscale pattern on the surface of the cylinder, and a light source for irradiating light on the surface of the cylinder, thereby reducing the position error of the cylindrical magnetic levitation stage to a nanoscale size and correcting the error caused by mechanical processing in real time. Moreover, the present invention provides an exposure apparatus, which includes a differential vacuum means combined with the cylindrical magnetic levitation stage to create a partial vacuum environment between the light source and the surface of the cylinder, and thus it is possible to employ light sources such as X-rays, electron beams, extreme ultraviolet (EUV) rays, etc.
摘要翻译： 本发明提供一种圆柱形磁悬浮台和曝光装置，其可以直接在大圆柱体的表面上形成大面积的纳米级图案。 本发明提供了一种曝光装置，其包括一种新型的圆柱形磁悬浮台，其可以通过非接触方式的磁悬浮原理沿轴向悬浮，旋转和移动圆柱体，并在其上形成纳米尺度图案 圆柱体的表面，以及用于在圆筒表面上照射光的光源，从而将圆柱形磁悬浮台的位置误差降低到纳米尺寸，并且实时校正由机械加工引起的误差。 此外，本发明提供了一种曝光装置，其包括与圆柱形磁悬浮台结合的差分真空装置，以在光源和圆柱体的表面之间产生局部真空环境，因此可以采用光源 作为X射线，电子束，极紫外（EUV）射线等
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公开(公告)号：US08913230B2
公开(公告)日：2014-12-16
申请号：US12828498
申请日：2010-07-01
CPC分类号： G03F7/7035 , B25B11/005 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/703 , G03F7/70375
摘要： In an imprint lithography system, a recessed support on a template chuck may alter a shape of a template positioned thereon providing minimization and/or elimination of premature downward deflection of outer edges of the template in a nano imprint lithography process.
摘要翻译： 在压印光刻系统中，模板卡盘上的凹进的支撑件可以改变定位在其上的模板的形状，从而在纳米压印光刻工艺中最小化和/或消除模板的外边缘的过早向下偏移。
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公开(公告)号：US08891065B2
公开(公告)日：2014-11-18
申请号：US13206770
申请日：2011-08-10
CPC分类号： G03F1/14 , G03F1/0007 , G03F1/50 , G03F1/60 , G03F7/24 , G03F7/703 , G03F7/7035 , G03F7/70783 , G03F7/70791
摘要： A system for forming a pattern on a part comprises a chamber base, a pressure vessel and a retaining device. The retaining device is positionable between the chamber base and the pressure vessel to secure a deformable mask therebetween. The system further comprises a first pressure source, a second pressure source and a third pressure source. The first pressure source provides a negative pressure within the chamber to draw the mask towards a part installed within the chamber base. The second pressure source provides a positive pressure within the pressure vessel to direct the mask towards the part so that the mask corresponds to at least one complex non-planar surface of the part. The third pressure source provides a negative pressure within pressure vessel. An exposure source exposes the part through the mask while the mask is deformed corresponding to the at least one complex non-planar surface of the part.
摘要翻译： 用于在部件上形成图案的系统包括腔室底座，压力容器和保持装置。 保持装置可定位在腔室底座和压力容器之间，以将可变形掩模固定在其间。 该系统还包括第一压力源，第二压力源和第三压力源。 第一压力源在腔室内提供负压，以朝着安装在腔室底部内的部分拉出掩模。 第二压力源在压力容器内提供正压力以将掩模朝向部件引导，使得掩模对应于部件的至少一个复杂的非平面表面。 第三压力源在压力容器内提供负压。 当掩模相对于该零件的至少一个复杂非平面表面变形时，曝光源通过掩模曝光该零件。
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公开(公告)号：US20140333914A1
公开(公告)日：2014-11-13
申请号：US14341443
申请日：2014-07-25
发明人： Chien-Hsuan Liu , Jen-Pan Wang
CPC分类号： G03F1/52 , G03F1/24 , G03F1/50 , G03F1/76 , G03F7/70058 , G03F7/70283 , G03F7/703
摘要： Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
摘要翻译： 公开了各种非平面反射光刻掩模，使用这种光刻掩模的系统以及方法。 一个实施例是包括透明基板，反射材料和掩模版图案的光刻掩模。 透明基板包括弯曲表面。 反射材料与透明基板的弯曲表面相邻，并且反射材料和透明基板之间的界面是反射表面。 标线图案位于透明基板的第二表面上。 标线图案的反射率小于反射材料的反射率。 公开了形成类似光刻掩模和使用类似光刻掩模的方法。
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公开(公告)号：US08735024B2
公开(公告)日：2014-05-27
申请号：US13421235
申请日：2012-03-15
申请人： Chien-Hsuan Liu , Jen-Pan Wang
发明人： Chien-Hsuan Liu , Jen-Pan Wang
CPC分类号： G03F1/50 , G03F7/70283 , G03F7/703
摘要： Various non-planar lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a lens-type transparent substrate and a reticle pattern on a surface of the lens-type transparent substrate. The reticle pattern is opaque to optical radiation. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
摘要翻译： 公开了各种非平面光刻掩模，使用这种光刻掩模的系统和方法。 实施例是在透镜型透明基板的表面上包括透镜型透明基板和标线图案的光刻掩模。 标线图案对于光学辐射是不透明的。 公开了形成类似光刻掩模和使用类似光刻掩模的方法。
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公开(公告)号：US20130208251A9
公开(公告)日：2013-08-15
申请号：US12384219
申请日：2009-04-01
申请人： Boris Kobrin , Boris Volf , Igor Landau
发明人： Boris Kobrin , Boris Volf , Igor Landau
IPC分类号： G03B27/42
CPC分类号： G03F7/703 , G03B27/42 , G03F7/70325 , G03F7/7035 , G03F7/70358 , G03F7/704
摘要： Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact or close proximity with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
摘要翻译： 本发明的实施例涉及在大面积基板的纳米图案中有用的方法和装置，其中使用可旋转掩模来对辐射敏感材料成像。 通常，可旋转掩模包括圆筒。 纳米图案技术利用近场光刻技术，其中用于图案化衬底的掩模与衬底接触或接近。 近场光刻可以使用弹性体相移掩模，或者可以采用表面等离子体激元技术，其中旋转圆柱表面包括金属纳米孔或纳米颗粒。
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