Wavelength conversion system and processing method

    公开(公告)号:US11226536B2

    公开(公告)日:2022-01-18

    申请号:US16987972

    申请日:2020-08-07

    摘要: A wavelength conversion system including: A. a first nonlinear optical crystal to which first pulsed laser light having a first polarization state and a first wavelength and second pulsed laser light having a second polarization state and a second wavelength are inputted and which is configured to output in response to the input the second pulsed laser light and first sum frequency light having the second polarization state and a third wavelength produced by sum frequency mixing of the first wavelength with the second wavelength; and B. a second nonlinear optical crystal to which the first sum frequency light and the second pulsed laser light outputted from the first nonlinear optical crystal are inputted and which is configured to output in response to the input third pulsed laser light having a fourth wavelength.

    Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method

    公开(公告)号:US11022892B2

    公开(公告)日:2021-06-01

    申请号:US16669317

    申请日:2019-10-30

    IPC分类号: G03B27/54 G03F7/20

    摘要: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

    Radiation source for lithography exposure process

    公开(公告)号:US10802405B2

    公开(公告)日:2020-10-13

    申请号:US16124357

    申请日:2018-09-07

    IPC分类号: G03B27/54 G03F7/20 H05G2/00

    摘要: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.

    Model for estimating stochastic variation

    公开(公告)号:US10795267B2

    公开(公告)日:2020-10-06

    申请号:US16462569

    申请日:2017-11-17

    IPC分类号: G03B27/54 G03F7/20 G06F7/70

    摘要: A method including: obtaining a resist process dose sensitivity value for a patterning process; applying the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of resist process dose sensitivity to obtain a value of the stochastic variable; and designing or modifying a parameter of the patterning process based on the stochastic variable value.

    Apparatus and method for monitoring reflectivity of the collector for extreme ultraviolet radiation source

    公开(公告)号:US10747119B2

    公开(公告)日:2020-08-18

    申请号:US16568044

    申请日:2019-09-11

    IPC分类号: G03B27/54 G03F7/20

    摘要: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

    Illumination device and image reading device

    公开(公告)号:US10674030B2

    公开(公告)日:2020-06-02

    申请号:US16475445

    申请日:2018-02-21

    摘要: An illumination device includes a light source and a rod-like light guide extending in a longitudinal direction for guiding incident light to an object to be illuminated. The light source is disposed at an end of the light guide extending in a longitudinal direction. The light guide includes an incident surface at the longitudinal end to receive light emitted from the light source, a flat emission surface to emit light incident on the light guide toward the object to be illuminated, a parabolic reflective surface to reflect, toward the emission surface, light from a focus of the paraboloid shape of the refractive surface or light passing through the focus from a predetermined area, and a light-scattering portion, having a predetermined area, to scatter light entering through the incident surface and reflect the light toward the reflective surface. The light-scattering portion is placed at the focus of the paraboloid shape or at a position where light reflected by the scattering area on the light-scattering portion passes through the focus.

    Optical system, in particular for a microlithographic projection exposure apparatus

    公开(公告)号:US10520827B2

    公开(公告)日:2019-12-31

    申请号:US16241462

    申请日:2019-01-07

    IPC分类号: G03B27/54 G03F7/20

    摘要: An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface. The compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.