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公开(公告)号：US20230384663A1
公开(公告)日：2023-11-30
申请号：US18366136
申请日：2023-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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公开(公告)号：US11656391B2
公开(公告)日：2023-05-23
申请号：US16882094
申请日：2020-05-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
CPC classification number: G02B5/1866 , G02B5/18 , G02F1/31 , G03F1/44 , G03F7/2024 , G03F7/70616 , G03F7/70633 , G03H1/26 , G02B5/1861
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US11513441B2
公开(公告)日：2022-11-29
申请号：US17208791
申请日：2021-03-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yu-Chih Chen , Po-Chung Cheng , Li-Jui Chen , Shang-Chieh Chien , Sheng-Kang Yu , Wei-Chun Yen
Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
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公开(公告)号：US11269257B2
公开(公告)日：2022-03-08
申请号：US17068197
申请日：2020-10-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chieh Hsieh , Kuan-Hung Chen , Chun-Chia Hsu , Shang-Chieh Chien , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
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公开(公告)号：US11158989B2
公开(公告)日：2021-10-26
申请号：US16846103
申请日：2020-04-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Henry Yee-Shian Tong , Wen-Chih Wang , Hsin-Liang Chen , Louis Chun-Lin Chang , Cheng-Chieh Chen , Li-Jui Chen , Po-Chung Cheng , Jeng-Yann Tsay
Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.
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Patent Agency Ranking
公开(公告)号：US11029324B2
公开(公告)日：2021-06-08
申请号：US16579660
申请日：2019-09-23
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： En Hao Lai , Chi Yang , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.
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公开(公告)号：US20210033983A1
公开(公告)日：2021-02-04
申请号：US16805861
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Chen , Po-Chung Cheng , Li-Jui Chen , Che-Chang Hsu , Chi Yang
IPC: G03F7/20
Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.
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公开(公告)号：US10859928B2
公开(公告)日：2020-12-08
申请号：US16415642
申请日：2019-05-17
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yu-Chih Chen , Sheng-Kang Yu , Chi Yang , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
Abstract: An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.
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公开(公告)号：US10852649B2
公开(公告)日：2020-12-01
申请号：US16740756
申请日：2020-01-13
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Zi-Wen Chen , Po-Chung Cheng , Chih-Tsung Shih , Li-Jui Chen , Shih-Chang Shih
Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
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公开(公告)号：US20200284954A1
公开(公告)日：2020-09-10
申请号：US16882094
申请日：2020-05-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yem-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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