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    Reflective optical element
    1.
    发明授权
    Reflective optical element 有权

    公开(公告)号：US10916356B2

    公开(公告)日：2021-02-09

    申请号：US16511166

    申请日：2019-07-15

    申请人： Carl Zeiss SMT GmbH

    发明人： Dmitry Kuznetsov ,  Andrey E. Yakshin ,  Hartmut Enkisch ,  Viacheslav Medvedev ,  Frederik Bijkerk

    IPC分类号： G21K1/06 ,  G03F7/20

    摘要： For a working wavelength in the range from 1 nm to 12 nm, a reflective optical element has, on a substrate, a multilayer system that includes at least two alternating materials having a different real part of the refractive index at the working wavelength. The multilayer system includes a first alternating material from the group formed from thorium, uranium, barium, nitrides thereof, carbides thereof, borides thereof, lanthanum carbide, lanthanum nitride, lanthanum boride, and a second alternating material from the group formed from carbon, boron, boron carbide, or lanthanum as first alternating material and carbon or boron as second alternating material. It has, on the side of the multilayer system remote from the substrate, a protective layer system including a nitride, an oxide and/or a platinum metal.

    Optical system, in particular for a microlithographic projection exposure apparatus
    3.
    发明授权
    Optical system, in particular for a microlithographic projection exposure apparatus 有权

    公开(公告)号：US10520827B2

    公开(公告)日：2019-12-31

    申请号：US16241462

    申请日：2019-01-07

    申请人： Carl Zeiss SMT GmbH

    发明人： Hartmut Enkisch ,  Thomas Schicketanz ,  Matus Kalisky ,  Oliver Dier

    IPC分类号： G03B27/54 ,  G03F7/20

    摘要： An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface. The compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.

    Method for producing a mirror element
    4.
    发明授权
    Method for producing a mirror element 有权

    公开(公告)号：US10423073B2

    公开(公告)日：2019-09-24

    申请号：US15225328

    申请日：2016-08-01

    申请人： Carl Zeiss SMT GmbH

    发明人： Hartmut Enkisch ,  Peter Huber ,  Sebastian Strobel

    IPC分类号： G02B5/10 ,  G03F7/20 ,  G02B5/08 ,  G02B5/09 ,  G21K1/06 ,  G02B26/08

    摘要： A method for producing a mirror element, in particular for a microlithographic projection exposure apparatus includes: providing a substrate (101, 102, 103, 104, 201, 202, 301, 302, 401, 402, 501, 502, 801, 901, 951, 961); and forming a layer stack (111, 112, 113, 114, 211, 212, 311, 312, 411, 412, 511, 512) on the substrate, wherein the layer stack is formed so that a setpoint curvature of the mirror element for a predetermined operating temperature is generated by a bending force exerted by the layer stack, wherein the substrate has a curvature deviating from the setpoint curvature of the mirror element prior to the formation of the layer stack, and wherein the bending force exerted by the layer stack is at least partly generated by virtue of a post-treatment for changing the layer tension of the layer stack.

    PROJECTION OPTICAL UNIT FOR EUV PROJECTION LITHOGRAPHY
    5.
    发明申请
    PROJECTION OPTICAL UNIT FOR EUV PROJECTION LITHOGRAPHY 审中-公开

    公开(公告)号：US20190121107A1

    公开(公告)日：2019-04-25

    申请号：US16222512

    申请日：2018-12-17

    申请人： Carl Zeiss SMT GmbH

    发明人： Markus Schwab ,  Hartmut Enkisch ,  Thomas Schicketanz

    IPC分类号： G02B17/06 ,  G03F7/20

    摘要： A projection optical unit for EUV projection lithography has a plurality of mirrors for imaging an object field into an image field with illumination light. At least one of the mirrors is an NI mirror and at least one of the mirrors is a GI mirror. A mirror dimension Dx of the at least one NI mirror in a plane of extent (xz) perpendicular to a plane of incidence (yz) satisfies the following relationship: 4 LLWx/IWPVmax

    Intensity adaptation filter for EUV microlithography, method for producing same, and illumination system having a corresponding filter
    8.
    发明授权
    Intensity adaptation filter for EUV microlithography, method for producing same, and illumination system having a corresponding filter 有权

    公开(公告)号：US10809625B2

    公开(公告)日：2020-10-20

    申请号：US16432303

    申请日：2019-06-05

    申请人： Carl Zeiss SMT GmbH

    发明人： Hartmut Enkisch ,  Ulrich Mueller

    IPC分类号： G06F7/20 ,  G03F7/20 ,  G02B5/08 ,  G21K1/06

    摘要： An optical element for an optical system that operates with working light in the wavelength spectrum of extreme ultraviolet light or soft X-ray radiation, in particular an optical system for EUV microlithography, that includes an absorber layer (12) for EUV or soft X-ray radiation. The absorber layer extends along an optically effective surface and has a thickness that is defined transversely with respect to the optically effective surface, wherein the thickness of the absorber layer varies over the optically effective surface. Also disclosed is a mirror formed by at least one roughened surface of the mirror, the roughness of which varies over the surface. In addition, an illumination system for an EUV projection exposure apparatus, and a method for producing a corresponding intensity adaptation filter are disclosed.

    Mirror, in particular for a microlithographic projection exposure apparatus
    10.
    发明授权
    Mirror, in particular for a microlithographic projection exposure apparatus 有权

    公开(公告)号：US10331048B2

    公开(公告)日：2019-06-25

    申请号：US15871926

    申请日：2018-01-15

    申请人： Carl Zeiss SMT GmbH

    发明人： Oliver Dier ,  Kerstin Hild ,  Hartmut Enkisch ,  Matus Kalisky

    IPC分类号： G03B27/54 ,  G03F7/20 ,  G21K1/06

    摘要： A mirror, in particular for a microlithographic projection exposure apparatus, has an optically effective surface, a mirror substrate (205, 305), a reflection layer (220, 320), which is configured to provide the mirror with a reflectivity of at least 50% for electromagnetic radiation with a predetermined operating wavelength incident on the optically effective surface (200a, 300a) at angles of incidence in relation to the respective surface normals of at least 65°, and a substrate protection layer (210, 310) which is arranged between the mirror substrate (205, 305) and the reflection layer (220, 320). The substrate protection layer has a transmission of less than 0.1% for EUV radiation.